48pin TSOP
Abstract: HN29W6411 O2-A2 200H HN29W6411TT-50 D512-D527
Text: HN29W6411 Series More than 16,057 sectors 67,824,768 bits CMOS AND Flash Memory (Mostly Good Memory) Preliminary Rev.0.7 March 28, 1996 Description The Hitachi HN29W6411 is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3V power supply. The functions are controlled by
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HN29W6411
00Max
08Min
18max
20Max
94Max
48pin TSOP
O2-A2
200H
HN29W6411TT-50
D512-D527
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Hitachi DSA00276
Abstract: No abstract text available
Text: HN29V102414 Series 1G AND type Flash Memory More than 32,113-sector 542,581,248-bit x 2 ADE-203-1265 (Z) Preliminary Rev. 0.0 Apr. 13, 2001 Description The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V102414
113-sector
248-bit)
ADE-203-1265
D-85622
Hitachi DSA00276
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HN29W12811
Abstract: HN29W12811BP-60 Hitachi DSA0047
Text: HN29W12811BP Series 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADE-203-1260 (Z) Preliminary Rev. 0.0 Apr. 18, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W12811BP
029-sector
984-bit)
ADE-203-1260
HN29W12811
HN29W12811BP-60
Hitachi DSA0047
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pd2111
Abstract: 800H HN29W25611ST-80 Hitachi DSA0014 d2111
Text: HN29W25611S Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1233C (Z) Rev. 3.0 Oct. 22, 2001 Description The Hitachi HN29W25611S Series is CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
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HN29W25611S
057-sector
072-bit)
ADE-203-1233C
pd2111
800H
HN29W25611ST-80
Hitachi DSA0014
d2111
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d2111
Abstract: HN29V25611A PD2048 Hitachi DSA0092 2112N HN29V25611ABP HN29V25611ABP-50
Text: HN29V25611ABP Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1281 (Z) Preliminary Rev. 0.0 Aug. 10, 2001 Description The Hitachi HN29V25611A Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V25611ABP
057-sector
072-bit)
ADE-203-1281
HN29V25611A
d2111
PD2048
Hitachi DSA0092
2112N
HN29V25611ABP-50
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800H
Abstract: HN29V51211 HN29V51211T-50 Hitachi DSA0047
Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221B (Z) Preliminary Rev. 0.2 Jul. 25, 2001 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V51211
113-sector
248-bit)
ADE-203-1221B
800H
HN29V51211T-50
Hitachi DSA0047
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Hitachi DSA00281
Abstract: No abstract text available
Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995C (Z) Rev. 2.0 May. 11, 2001 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W25611
057-sector
072-bit)
ADE-203-995C
D-85622
Hitachi DSA00281
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800H
Abstract: HN29V51211 HN29V51211T-50 Hitachi DSA00358
Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221 (Z) Preliminary Rev. 0.0 Sep. 20, 2000 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V51211
113-sector
248-bit)
ADE-203-1221
b2100
800H
HN29V51211T-50
Hitachi DSA00358
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K2111
Abstract: 800H HN29V25611AT-50H Hitachi DSA00480
Text: HN29V25611AT-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1334A (Z) Rev. 1.0 Apr. 5, 2002 Description The Hitachi HN29V25611AT-50H Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The
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HN29V25611AT-50H
057-sector
072-bit)
ADE-203-1334A
HN29V25611AT-50H
K2111
800H
Hitachi DSA00480
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Hitachi Stacked package memory
Abstract: HN29W16814 SA Series HITEC 527 PD513 Hitachi DSA00196
Text: HN29W16814 Series 168M AND type Flash Memory More than 21,074-sector 86,319,104-bit x 2 ADE-203-943 (Z) Preliminary Rev. 0.0 Jul. 21, 1998 Description The Hitachi HN29W16814 Series is stacked 2 chips Hitachi 84-Mbit Flash memory (HN29W8411) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase
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HN29W16814
074-sector
104-bit)
ADE-203-943
84-Mbit
HN29W8411)
HN29W8411
Hitachi Stacked package memory
SA Series
HITEC 527
PD513
Hitachi DSA00196
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Hitachi DSA0092
Abstract: 800H HN29W12811 HN29W12811T-60
Text: HN29W12811 Series 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADE-203-1183D (Z) Rev. 3.0 Apr. 13, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W12811
029-sector
984-bit)
ADE-203-1183D
Hitachi DSA0092
800H
HN29W12811T-60
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800H
Abstract: HN29V102414 HN29V102414T-50 Hitachi DSA0047
Text: HN29V102414 Series 1G AND type Flash Memory More than 32,113-sector 542,581,248-bit x 2 ADE-203-1265A (Z) Preliminary Rev. 0.1 Jul. 25, 2001 Description The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V102414
113-sector
248-bit)
ADE-203-1265A
800H
HN29V102414T-50
Hitachi DSA0047
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PD513
Abstract: No abstract text available
Text: HN29W6411 Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit ADE-203-637E (Z) Rev. 5.0 Nov. 14, 1997 Description The Hitachi HN29W6411 Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are
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HN29W6411
057-sector
768-bit)
ADE-203-637E
TTP-48/40D)
PD513
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Hitachi DSA002710
Abstract: No abstract text available
Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995 (Z) Preliminary, Rev. 0.0 Jan. 8, 1999 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The
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HN29W25611
057-sector
072-bit)
ADE-203-995
Hitachi DSA002710
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HITEC 527
Abstract: HN29W12814ATT-50 768-BIT Hitachi DSA00200 pd513
Text: HN29W12814A Series 128M AND type Flash Memory More than 16,057-sector 67,824,768-bit x 2 ADE-203-944 (Z) Preliminary Rev. 0.0 Jul. 21, 1998 Description The Hitachi HN29W12814A Series is stacked 2 chips Hitachi 64-Mbit Flash memory (HN29W6411A) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase
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HN29W12814A
057-sector
768-bit)
ADE-203-944
64-Mbit
HN29W6411A)
HN29W6411A
HITEC 527
HN29W12814ATT-50
768-BIT
Hitachi DSA00200
pd513
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Hitachi DSA0091
Abstract: HN29W51214ST-80
Text: HN29W51214S Series 512M AND type Flash Memory More than 16,057-sector 271,299,072-bit x 2 ADE-203-1155C (Z) Rev. 3.0 Mar. 8, 2001 Description The Hitachi HN29W51214S Series is stacked 2 chips Hitachi 256-Mbit Flash memory (HN29W25611S) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase
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HN29W51214S
057-sector
072-bit)
ADE-203-1155C
256-Mbit
HN29W25611S)
HN29W25611S
Hitachi DSA0091
HN29W51214ST-80
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800H
Abstract: HN29V51211 HN29V51211T-50
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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800H
Abstract: HN29V51211T-50H
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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800H
Abstract: HN29W12811 HN29W12811T-60 Hitachi DSA00358
Text: HN29W12811 Series 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADE-203-1183C (Z) Rev. 2.0 Feb. 7, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W12811
029-sector
984-bit)
ADE-203-1183C
800H
HN29W12811T-60
Hitachi DSA00358
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HN29W12811
Abstract: HN29W12811BP-60 Hitachi DSA0070
Text: HN29W12811BP Series 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADE-203-1260 (Z) Rev. 0.0 Apr. 18, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W12811BP
029-sector
984-bit)
ADE-203-1260
HN29W12811
HN29W12811BP-60
Hitachi DSA0070
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Hitachi DSA002781
Abstract: No abstract text available
Text: HN29W51214S Series 512M AND type Flash Memory More than 16,057-sector 271,299,072-bit x 2 ADE-203-1155 (Z) Preliminary Rev. 0.0 Jan. 24, 2000 Description The Hitachi HN29W51214S Series is stacked 2 chips Hitachi 256-Mbit Flash memory (HN29W25611S) that
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HN29W51214S
057-sector
072-bit)
ADE-203-1155
256-Mbit
HN29W25611S)
HN29W25611S
Hitachi DSA002781
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Hitachi DSA00174
Abstract: No abstract text available
Text: HN29W12814A Series 128M AND type Flash Memory More than 16,057-sector 67,824,768-bit x 2 ADE-203-944B (Z) Rev. 2.0 Feb. 20, 1999 Description The Hitachi HN29W12814A Series is stacked 2 chips Hitachi 64-Mbit Flash memory (HN29W6411A) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase
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HN29W12814A
057-sector
768-bit)
ADE-203-944B
64-Mbit
HN29W6411A)
HN29W6411A
Hitachi DSA00174
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Hitachi DSA002734
Abstract: 2112N
Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221C (Z) Rev. 1.0 Jan. 25, 2002 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V51211
113-sector
248-bit)
ADE-203-1221C
Hitachi DSA002734
2112N
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800H
Abstract: HN29W25611ST-80 Hitachi DSA0047
Text: HN29W25611S Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1233B (Z) Rev. 2.0 Mar. 8, 2001 Description The Hitachi HN29W25611S Series is CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
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HN29W25611S
057-sector
072-bit)
ADE-203-1233B
800H
HN29W25611ST-80
Hitachi DSA0047
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