Untitled
Abstract: No abstract text available
Text: DB2J309 Silicon epitaxial planar type Unit: mm For high speed switching circuits • Features Short reverse recovery time trr Small reverse current IR Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: C5
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DB2J309
UL-94
DB2J30900L
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pcb diagram welding inverter
Abstract: CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Preliminary data Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive
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MIXA20W1200MC
20091002a
pcb diagram welding inverter
CIRCUIT diagram welding inverter
MIXA20W1200MC
marking W18
g14 DIODE marking
C5 marking diode
airconditioning inverter circuit
WELDING INVERTER DIAGRAM
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Untitled
Abstract: No abstract text available
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coeficient of the on-state
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MIXA20W1200MC
20110304b
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Si2315DS
Abstract: No abstract text available
Text: Si2315DS Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.5 0.075 @ VGS = –2.5 V "3 0.118 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2315DS (C5)* *Marking Code
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Si2315DS
O-236
OT-23)
S-56947--Rev.
28-Dec-98
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Untitled
Abstract: No abstract text available
Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.5 0.075 @ VGS = –2.5 V "3 0.118 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2315DS (C5)* *Marking Code
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Si2315DS
O-236
OT-23)
S-56947--Rev.
28-Dec-98
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UC320
Abstract: CIRCUIT diagram welding inverter diode K14
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state
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MIXA20W1200MC
20110304b
UC320
CIRCUIT diagram welding inverter
diode K14
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Untitled
Abstract: No abstract text available
Text: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2315DS (C5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2315DS
O-236
OT-23)
S-56947--Rev.
28-Dec-98
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NEC Ga FET marking L
Abstract: Ga FET marking 1D 2SJ209 TF101-D NEC Ga FET marking A NEC Ga FET marking z NEC Ga FET "marking M" NEC Ga FET
Text: AdLib OCR Evaluation MOS FIELD EFFECT TRANSISTOR 2SJ209 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8±0.2 00 + 1.5 1~t, c'! +1 0~ C14 U T 0~ 0.65 _+0015 Ll 2 FEATURES Lo I 3 d+ csI Marking M 6 + t L C5 1 . Sourco 2 . Ga . 3 . Drain " Directly driven by lCs; having a 5 V power supply .
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2SJ209
2SJ209,
NEC Ga FET marking L
Ga FET marking 1D
2SJ209
TF101-D
NEC Ga FET marking A
NEC Ga FET marking z
NEC Ga FET "marking M"
NEC Ga FET
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N223
Abstract: a5 marking
Text: CM1420, CM1422 LCD EMI Filter Array with ESD Protection Description The CM1420 and CM1422 are EMI filter arrays with ESD protection, which integrate six and eight Pi−filters C−R−C , respectively. The CM1420/22 has component values of 15 pF − 100 W − 15 pF. These devices include ESD protection diodes on every
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CM1420,
CM1422
CM1420
CM1420/22
MIL-STD-883
CM1420/D
N223
a5 marking
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Untitled
Abstract: No abstract text available
Text: CM1420, CM1422 LCD EMI Filter Array with ESD Protection Description The CM1420 and CM1422 are EMI filter arrays with ESD protection, which integrate six and eight Pi−filters C−R−C , respectively. The CM1420/22 has component values of 15 pF − 100 W − 15 pF. These devices include ESD protection diodes on every
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CM1420,
CM1422
CM1420
CM1422
CM1420/22
CM1420/D
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N051
Abstract: CM1405 CM1405-01CP CM1405-01CS CM1405-03CS IEC610004-2
Text: PRELIMINARY CM1405 LCD EMI Filter Array with ESD Protection Features Product Description • • CAMD's CM1405 is an EMI filter array with ESD protection, which integrates eight Pi- filters C-R-C . The CM1405 has component values of 25pF-100Ω-25pF. The parts include avalanche-type ESD diodes on every
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CM1405
CM1405
25pF-100-25pF.
IEC610004-2
MIL-STD-883
178mm
N051
CM1405-01CP
CM1405-01CS
CM1405-03CS
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CM1405 LCD EMI Filter Array with ESD Protection Features Product Description • • CAMD's CM1405 is an EMI filter array with ESD protection, which integrates eight Pi- filters C-R-C . The CM1405 has component values of 25pF-100Ω-25pF. The parts include avalanche-type ESD diodes on every
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CM1405
CM1405
25pF-100â
-25pF.
IEC610004-2
MIL-STD-883
178mm
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marking L2 SOT23 6
Abstract: RF1 SOT-23 MARKING C6 SOT23 SMP1345-079LF SK4025 C7L3 Marking C6 SOT23-5 MARKING 518
Text: DATA SHEET SMP1345 Series: Very Low Capacitance, Plastic Packaged Silicon PIN Diodes Features Designed for high-isolation LNB, WLAN and wireless switch applications ● Very low insertion loss 0.4 dB ● 0.15 pF capacitance ● Available lead (Pb)-free and RoHS-compliant MSL-1 @ 250 °C per
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SMP1345
J-STD-020
OT-23
marking L2 SOT23 6
RF1 SOT-23
MARKING C6 SOT23
SMP1345-079LF
SK4025
C7L3
Marking C6 SOT23-5
MARKING 518
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Untitled
Abstract: No abstract text available
Text: MMSZ5221B - MMSZ5259B 500mW SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction 500mW Power Dissipation General Purpose, Medium Current Ideally Suited for Automated Assembly Processes SOD-123 Mechanical Data · · · · · · · · D H Dim
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MMSZ5221B
MMSZ5259B
500mW
OD-123
OD-123,
J-STD-020A
MIL-STD-202,
01grams
DS18010
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marking code f4 DIODE
Abstract: zener diode E2 zener diode J3 ZENER DIODE E1 zener diode j5 c5 marking code SOD-123 marking code 1200 marking code k1 J3 marking code marking code C5
Text: MMSZ5221B - MMSZ5259B 500mW SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction 500mW Power Dissipation General Purpose, Medium Current Ideally Suited for Automated Assembly Processes SOD-123 Mechanical Data · · · · · · · · D H Dim
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MMSZ5221B
MMSZ5259B
500mW
OD-123
OD-123,
J-STD-020A
MIL-STD-202,
01grams
DS18010
marking code f4 DIODE
zener diode E2
zener diode J3
ZENER DIODE E1
zener diode j5
c5 marking code
SOD-123 marking code 1200
marking code k1
J3 marking code
marking code C5
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zener diode K4
Abstract: G1 E3 marking
Text: MMSZ5221B - MMSZ5259B 500mW SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction 500mW Power Dissipation General Purpose, Medium Current Ideally Suited for Automated Assembly Processes SOD-123 Mechanical Data · · · · · · · · D H Dim
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MMSZ5221B
MMSZ5259B
500mW
OD-123
OD-123,
J-STD-020A
MIL-STD-202,
01grams
DS18010
zener diode K4
G1 E3 marking
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zener diode j5
Abstract: Zener diode marking code G4 zener diode E5 zener diode K4 zener diode code k1 Zener diode MARKING H5 Zener diode h5 marking j1 sod123
Text: MMSZ5221B - MMSZ5259B 500mW SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction 500mW Power Dissipation General Purpose, Medium Current Ideally Suited for Automated Assembly Processes SOD-123 Mechanical Data · · · · · · · · D H Dim
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MMSZ5221B
MMSZ5259B
500mW
OD-123
OD-123,
J-STD-020A
MIL-STD-202,
DS18010
zener diode j5
Zener diode marking code G4
zener diode E5
zener diode K4
zener diode code k1
Zener diode MARKING H5
Zener diode h5
marking j1 sod123
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Untitled
Abstract: No abstract text available
Text: WTE POWER SEMICONDUCTORS MMSZ5221B – MMSZ5262B Pb 500mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction 500mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability
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MMSZ5221B
MMSZ5262B
500mW
OD-123
OD-123,
MIL-STD-202,
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K5 marking code diode
Abstract: marking code diode K5 MMSZ5261B marking DIODE H5 c2
Text: WTE POWER SEMICONDUCTORS MMSZ5221B – MMSZ5262B Pb 500mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction 500mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability
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MMSZ5221B
MMSZ5262B
500mW
OD-123
OD-123,
MIL-STD-202,
K5 marking code diode
marking code diode K5
MMSZ5261B marking
DIODE H5 c2
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MMSZ5262BS
Abstract: marking code diode K5 K5 marking code diode sod323 marking c2
Text: WTE MMSZ5221BS – MMSZ5262BS Pb POWER SEMICONDUCTORS 200mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction 200mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability
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MMSZ5221BS
MMSZ5262BS
200mW
OD-323
OD-323,
MIL-STD-202,
MMSZ5262BS
marking code diode K5
K5 marking code diode
sod323 marking c2
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Untitled
Abstract: No abstract text available
Text: WTE MMSZ5221BS – MMSZ5262BS Pb POWER SEMICONDUCTORS 200mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction 200mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability
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MMSZ5221BS
MMSZ5262BS
200mW
OD-323
OD-323,
MIL-STD-202,
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Zener diode MARKING H5
Abstract: diode marking code H5 zener diode E2 MMSZ5258B marking code f4 DIODE MARKING CODE f5 5 lead marking code g5 zener MMSZ5242B Spice MARKING CODE f5 MMSZ5227B
Text: MMSZ5221B - MMSZ5259B 500mW SURFACE MOUNT ZENER DIODE SPICE MODELS: MMSZ5221B MMSZ5223B MMSZ5225B MMSZ5226B MMSZ5227B MMSZ5228B MMSZ5229B MMSZ5230B MMSZ5231B MMSZ5232B MMSZ5233B MMSZ5234B MMSZ5235B MMSZ5236B MMSZ5237B MMSZ5238B MMSZ5239B MMSZ5240B MMSZ5241B MMSZ5242B MMSZ5243B
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MMSZ5221B
MMSZ5259B
500mW
MMSZ5223B
MMSZ5225B
MMSZ5226B
MMSZ5227B
MMSZ5228B
MMSZ5229B
Zener diode MARKING H5
diode marking code H5
zener diode E2
MMSZ5258B
marking code f4 DIODE
MARKING CODE f5 5 lead
marking code g5 zener
MMSZ5242B Spice
MARKING CODE f5
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SL5010
Abstract: SL5010P piezo ceramic transducer piezoceramic
Text: SL5010P Semiconductor TONE RINGER WITH BRIDGE DIODE Description The SL5010P is a bipolar IC designed to replace the mechanical bell in telephone sets. It generates two analog tones, and a warble frequency to drive either directly a piezo-ceramic transducer or a small loudspeaker in response to ringing signal on the telephone line.
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SL5010P
SL5010P
SL5010
60mSec.
60mSec
KSI-W013-000
SL5010
piezo ceramic transducer
piezoceramic
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DSB010
Abstract: DS442X
Text: SAf/YO Q u i c k G u i d e To Small afc Ver-y Fast. Swi t o h i ng Type No. Package Out 1ine No. :Marking General purpose Diodes Di o d e s Electrical Characteristics/Ta=25°C Absolute Maximum Ratings/Ta=25’C Features Signal Remarks VR 10 IFM (V) (mA)
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OCR Scan
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Do-35
Do-34
Do-34S
LL-34
DSB010
DS442X
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