Q67100-Q954
Abstract: Q67100-Q955 Q67100-Q956 Q67100-Q957 362140GS-70
Text: 2M x 36-Bit Dynamic RAM Module HYM 362140S/GS-60/-70 Advanced Information • 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time
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36-Bit
362140S/GS-60/-70
18-bit)
Q67100-Q954
Q67100-Q955
Q67100-Q956
Q67100-Q957
362140GS-70
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511000
Abstract: 361120GS-70
Text: 1M x 36-Bit Dynamic RAM Module 2M × 18-Bit Dynamic RAM Module HYM 361120/40S/GS-60/-70 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) • 12 decoupling capacitors mounted on substrate • Fast access and cycle time
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36-Bit
18-Bit
361120/40S/GS-60/-70
18-bit)
cycles/16
511000
361120GS-70
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KS0086
Abstract: Display LCD 20x4 C160 C161 C240 SC80 acs lcd
Text: KS0086 PRELIMINARY 80CH COM/SEG DRIVER FOR DOT MATRIX LCD INTRODUCTION 100QFP The KS0086 is a LCD driver LSI which is fabricated by low power CMOS high voltage process technology. In case of segment driver, it can be interfaced as 1-bit serial or 4-bit parallel by controller. In case of common
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KS0086
100QFP
KS0086
Display LCD 20x4
C160
C161
C240
SC80
acs lcd
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511000
Abstract: 51100 P-SOJ-26/20-1 511000BJ-70 Q67100-Q1056 Q67100-Q518 256KDRAM
Text: 1 M x 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time
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511000BJ-50/-60/-70
511000BJL-50/-60/-70
511000
51100
P-SOJ-26/20-1
511000BJ-70
Q67100-Q1056
Q67100-Q518
256KDRAM
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511000BJ7
Abstract: No abstract text available
Text: 1 M x 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time
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Original
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PDF
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511000BJ-50/-60/-70
511000BJL-50/-60/-70
511000BJ7
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M X 36-Bit Dynamic RAM Module HYM 362140S/GS-60/-70 Advanced Information 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access time
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36-Bit
362140S/GS-60/-70
18-bit)
fl235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2 M X 36-Bit Dynamic RAM Module HYM 362120S-60/-70/-80 Advanced Information • 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time
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OCR Scan
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PDF
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36-Bit
362120S-60/-70/-80
18-bit)
Q05557fl
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KS0086
Abstract: No abstract text available
Text: PRELIMINARY 80CH COM/SEG DRIVER FOR DOT MATRIX LCD KS0086 INTRODUCTION 100QFP The KS0086 is a LCD driver LSI which is fabricated by low power CMOS high voltage process technology. In case of segment driver, it can be interfaced as 1-bit serial or 4-bit parallel by controller. In case of common
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OCR Scan
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KS0086
100QFP
KS0086
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M X 36-Bit Dynamic RAM Module 2M X 18-Bit Dynamic RAM Module HYM 361120/40S/GS-60/-70 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) 12 decoupling capacitors mounted on substrate • Fast access and cycle time
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OCR Scan
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PDF
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36-Bit
18-Bit
361120/40S/GS-60/-70
18-bit)
cycles/16
A235b05
00717b5
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2 M x 36-Bit Dynamic RAM Module HYM 362120S-60/-70/-80 Advanced Information • 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time
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OCR Scan
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PDF
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36-Bit
362120S-60/-70/-80
18-bit)
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Q67100-Q645
Abstract: 514400AJ 362120GS-60 362120 2m x 36 362120GS-80
Text: SIEMENS 2M x 36-Bit Dynamic RAM Module HYM 362120GS-60/-70/-80 Advanced Inform ation • 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time
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OCR Scan
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36-Bit
362120GS-60/-70/-80
18-bit)
sub70/-80
36-Bit
362120GS-60/-70/-80
Q67100-Q645
514400AJ
362120GS-60
362120
2m x 36
362120GS-80
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Untitled
Abstract: No abstract text available
Text: S IEM EN S 1M X 36-Bit Dynamic RAM Module 2M X 18-Bit Dynamic RAM Module HYM 361120/40S/GS-60/-70 Advanced Inform ation 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) 12 decoupling capacitors m ounted on substrate Fast access and cycle time
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OCR Scan
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PDF
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36-Bit
18-Bit
361120/40S/GS-60/-70
18-bit)
cycles/16
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hyb514400aj
Abstract: 514400AJ
Text: SIEMENS 1M X 36-Bit Dynamic RAM Module 2M X 18-Bit Dynamic RAM Module HYM 361120GS-60/-70/-80 Advanced Inform ation • • • • • • • • • • • • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) Fast access and cycle time
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OCR Scan
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36-Bit
18-Bit
361120GS-60/-70/-80
18-bit)
361120GS-60/-70/-80
36-Bit
hyb514400aj
514400AJ
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1 M X 36-Bit Dynamic RAM Module 2 M X 18-Bit Dynamic RAM Module HYM 361110/20S-60/-70/-80 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version)
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36-Bit
18-Bit
361110/20S-60/-70/-80
18-bit)
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1 M x 36-Bit Dynamic RAM Module 2 M x 18-Bit Dynamic RAM Module HYM 361110/20S-60/-70/-80 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version)
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OCR Scan
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PDF
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36-Bit
18-Bit
361110/20S-60/-70/-80
18-bit)
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M X 36-Bit Dynamic RAM Module 2M X 18-Bit Dynamic RAM Module HYM 361120GS-60/-70/-80 Advanced Inform ation • 1 048 576 w ords by 36-bit organization (alternative 2 097 152 words by 18-bit) • Fast access and cycle time 60 ns access time 1 1 0 n s cycle time (-60 version)
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36-Bit
18-Bit
361120GS-60/-70/-80
18-bit)
refr361120GS-60/-70/-80
36-Bit
DOOD035
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Cornell Dubilier type dcm
Abstract: C-0250 cde DCM capacitors DCMX Cornell Dubilier DCMX vibrating capacitor Cornell Dubilier DCM
Text: CORNELL DUBILIER OD E S eliT lor Gu i d e & îV-rformam'e Specifications * C o m p u ter ¡ra d e Use this Guide to select the best com puter grade capacitor for your applica tion. The six colum ns in the m iddle rank CDE capacitors by characteristic. T hose Types that are superior in a given category are indicated by a star
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10-55Hz
Cornell Dubilier type dcm
C-0250
cde DCM capacitors
DCMX
Cornell Dubilier DCMX
vibrating capacitor
Cornell Dubilier DCM
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T-46-23-15
Abstract: ah rzj IMSM511002AI MSM511002A-1A oki msm
Text: 4bE ]> w • b72454Q 000^534 RTS « O K I J O K I O K I SEMICONDU CT OR GROUP semiconductor_ M SM 511002A _ 1,048,576-WORD x 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511002A is a new generation dynam ic RAM organized as 1,048,576 w ords by 1 bit. The
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b72454Ã
MSM511002A
576-WORD
MSM51Ã
02A-70
140ns
468mW
MSM511002A-8A/80
T-46-23-15
ah rzj
IMSM511002AI
MSM511002A-1A
oki msm
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Untitled
Abstract: No abstract text available
Text: 1,048,576 W ORDS x 8 BIT DYNAMIC RAM MODULE PRELIMINARY DESCRIPTION The THM 81000AS/ASG/AL is a 1,048,576 words by 8 bits dynam ic RAM m odule w hich assem bled 8 pcs of T C 511000A J on the printed circuit board. T he THM 81000AS/AL is optim ized for application to
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81000AS/ASG/AL
11000A
81000AS/AL
THM81Q00
THMB1000
AS-70
THM81000AS/AL-70,
THM81020AL-70,
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DQ712
Abstract: 511000BJ-70
Text: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version
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511000BJ-50/-60/-70
511000BJL-50/-60/-70
DQ712
511000BJ-70
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Untitled
Abstract: No abstract text available
Text: 1 ,048,576 W O R D x PRELIMINARY 1 BIT D Y N A M IC R A M DESCRIPTION 511000 The TC BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
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TC511000BP/BJ/BZ/BFT
TC5110OOBP/BJ
/BZ/BFT-60
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HM511001-12
Abstract: HM511001
Text: H M 511001 S e r ie s 1048576-word x 1-bit CMOS Dynamic Random Access Memory The Hitachi HM511001 Series is a CMOS dynamic RAM organized 1,048,576-word x 1-bit. HM511001 has realized higher density, higher performance and various functions by employing 1.3jum CMOS process technology and some new CMOS circuit
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1048576-word
HM511001
576-word
HM511001,
18-pin
20-pin
DG-18A)
HM511001-12
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HM511001-12
Abstract: No abstract text available
Text: H M 511001S S e rie s -Preliminary 1048576-word x 1-bit CM O S Dynamic Random Access Memory The Hitachi HM 511001S series is a C M O S dynamic R A M organized 1048576-word x 1-bit. H M 511001S has realized higher density, higher performance and various functions by employing
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511001S
1048576-word
18-pin
20-pin
HM511001-12
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 1M x 1-Bit Dynamic RAM HYB 511000B-60/-70/-80 HYB 511000BL-60/70 Advance Information • • • • • • • • • • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 51 1000B/BL-60
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511000B-60/-70/-80
511000BL-60/70
1000B/BL-60)
1000B/BL-70)
511000B-80)
511000BL-60)
511000BL-70)
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