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BSW67 Datasheets (31)

Part	Manufacturer	Description	Datasheet Type	PDF
BSW67	Philips Semiconductors	NPN switching transistors	Original	PDF
BSW67	Semelab	Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=120 / Ic=2 / Hfe=30min / fT(Hz)=130M / Pwr(W)=5	Original	PDF
BSW67	Central Semiconductor	Leaded Small Signal Transistor General Purpose	Scan	PDF
BSW67	Crimson Semiconductor	Transistor Selection Guide	Scan	PDF
BSW67	Mullard	Quick Reference Guide 1977/78	Scan	PDF
BSW67	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
BSW67	Unknown	Transistor Replacements	Scan	PDF
BSW67	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BSW67	Unknown	Transistor Replacements	Scan	PDF
BSW67	Unknown	Transistor Replacements	Scan	PDF
BSW67	Unknown	Transistor Replacements	Scan	PDF
BSW67	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BSW67	Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF
BSW67	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF

BSW67	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
BSW67	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
BSW67	Unknown	Shortform Electronic Component Datasheets	Short Form	PDF
BSW67	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BSW67	SGS-Ates	Shortform Data Book 1977/78	Short Form	PDF
BSW67	SGS-Ates	Semiconductor Data Book 1976/77	Scan	PDF

BSW67 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BSW67 Abstract: No abstract text available Text: BSW67 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016) 0.53 (0.021)	Original	PDF	BSW67 O205AD) 17-Jul-02 BSW67
BSW67A Abstract: transistor 2a 20v 5w Text: BSW67A MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCBO = 120V • VCEO = 120V	Original	PDF	BSW67A O-205AD) BSW67A transistor 2a 20v 5w
Untitled Abstract: No abstract text available Text: BSW67A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)	Original	PDF	BSW67A O205AD) 19-Jun-02
data sheet BSW67A Abstract: BSW67A BP317 BSW66A BSW68A Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification NPN switching transistors	Original	PDF	M3D111 BSW66A; BSW67A; BSW68A MAM317 SCA54 117047/00/02/pp8 data sheet BSW67A BSW67A BP317 BSW66A BSW68A
Untitled Abstract: No abstract text available Text: BSW67 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016) 0.53 (0.021)	Original	PDF	BSW67 O205AD) 19-Jun-02
BSW67 Abstract: No abstract text available Text: BSW67 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016) 0.53 (0.021)	Original	PDF	BSW67 O205AD) 1-Aug-02 BSW67
Untitled Abstract: No abstract text available Text: BSW67A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)	Original	PDF	BSW67A O205AD) 17-Jul-02
Untitled Abstract: No abstract text available Text: BSW67A MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCBO = 120V • VCEO = 120V	Original	PDF	BSW67A O-205AD)
BSW67A Abstract: No abstract text available Text: BSW67A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)	Original	PDF	BSW67A O205AD) 1-Aug-02 BSW67A
BU606D Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650 Text: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 \| Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440	OCR Scan	PDF	BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 BU606D BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
2N5415 Abstract: No abstract text available Text: C R I M S O N S E M I C O N D U C T O R INC D e \| SSm CHti 00Q033L Ti 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 3 6 INC D T'33 ' J EPITAXIAL PLANAR - TO-39 PN P NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421	OCR Scan	PDF	00Q033L BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S 2N5415
Untitled Abstract: No abstract text available Text: 7421237 0 G 2 Ô 4 CÎ7 b • 'T '3 } > - 0 3 SGS-THOMSON iLdtmnfMOûS S G S- TH OM SON BSW67 BSW68 3QE D HIGH VOLTAGE SWITCH DESCRIPTIO N The BSW 67 and BSW 68 are silicon epitaxial pla nar NPN transistors in Jedec TO-39 metal case. They are intended for high voltage inductive load	OCR Scan	PDF	BSW67 BSW68 BSW67-BSW68
BSW68A 1990 Abstract: bsw68a Text: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO	OCR Scan	PDF	BSW66A BSW67A BSW68A BY206 BSW68A 1990 bsw68a
BY206 Abstract: 77655 BSW67A BSW68A 68A diode BY206 diode BSW66A 82S2 Silicon Epitaxial Planar Transistor philips k 68a Text: N AMER PHILIPS/DISCRETE L'ÌE D • 1^53^31 0027ÖT1 bSß B A P X BSW66A to 68A I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors prim arily intended fo r general purpose industrial and switching applications. Q UICK REFERENCE D ATA BSW66A BSW67A BSW68A	OCR Scan	PDF	BSW66A BSW67A BSW68A 500mA BAV10 BY206 7Z776S1 77655 BSW68A 68A diode BY206 diode 82S2 Silicon Epitaxial Planar Transistor philips k 68a

bsw68 Abstract: bsw67 Text: SGS-THOMSON EüJÛÏÏIMOigS BSW67 BSW68 HIGH VOLTAGE SWITCH DESCRIPTION The BSW 67 and BSW 68 are silicon epitaxial pla nar NPN transistors in Jedec TO-39 metal case. They are intended for high voltage inductive load switching applications. ABSO LU TE M AXIM UM RATINGS	OCR Scan	PDF	BSW67 BSW68 67-BSW BSW67-BSW68 bsw68
BSW68A Abstract: BSW67A BSW66A Text: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification	OCR Scan	PDF	BSW66A; BSW67A; BSW68A MAM317 BSW66A BSW67A BSW68A BSW67A BSW66A
BSW68 Abstract: BSW67 transistor bsw 67 Text: BSW67 SILICON PLANAR NPN B S W 68 H I G H - V O L T A G E SWITCH The BSW 67 and BSW 68 are silicon planar epitaxial NF‘N transistors in Jedec TO-39 metal case. They are intended for high voltage inductive load switching application. BSW 67 A B S O L U T E M A X IM U M R A T IN G S	OCR Scan	PDF	BSW67 BSW67 BSW68 200il S20ns. BSW68 transistor bsw 67
bsw68a Abstract: BSW67A MOTOROLA Text: MOTOROLA SC XSTRS/R F 15E D \| t-3b72S4 G GflbM n 3 \| T -ie -if BSW67A BSW68A MAXIMUM RATINGS Symbol BSW67A BSW68A Unit VCEO 120 150 Vdc Collector-Base Voltage VCBO 120 150 Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 2.0 Amp Total Device Dissipation @ Ta “ 25°C	OCR Scan	PDF	t-3b72S4 BSW67A BSW68A BSW68A BSW67A MOTOROLA
BSW67 Abstract: BSW68 LG 631 IC transistor bsw67 Text: Data Sheet cen tral BSW67 BSW68 Sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR BSW67, BSW68 types are Silicon NPN Epitaxial Planar Transistors designed	OCR Scan	PDF	BSW67, BSW68 BSW67 BSW68 100mA 500mA BSW67 LG 631 IC transistor bsw67
BY206 Abstract: BSW68A k 68a BSW67A BSW66A Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A Text: BSW66A to 68A PHILIPS INTERNATIONAL 5bE D m 711002b DD4237Ö bS4 HIPHIN SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK R EFER EN C E DATA BSW66A BSW67A BSW68A Collector-base voltage open emitter	OCR Scan	PDF	BSW66A 711002b DD4237Ã BSW67A BSW68A 711Qa2b Q0M53B5 BY206 k 68a Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A
BSW66A Abstract: bsw67a BSW63A bsw68a Text: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification	OCR Scan	PDF	BSW66A; BSW67A; BSW68A BSW66A BSW67A BSW68e BSW63A bsw68a
tube az2 Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A Text: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)	OCR Scan	PDF	BSS38 BSW41A T0-18 BSX19 BSX20 BSX21 BSY95A h--22-> crt6-25 tube az2 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34
2N2369At Abstract: 2N4237 High-Voltage Amplifiers 2N3546 2N3495 2N4033 MM4001 2N5679 MOTOROLA 2n5680 motorola 2N3114 Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F	OCR Scan	PDF	MIL-19500 i2N5415* 2N3637# MM4001 2N3635 2N3634# 2N3495 2N5680 MM4000 MM5007 2N2369At 2N4237 High-Voltage Amplifiers 2N3546 2N4033 2N5679 MOTOROLA 2n5680 motorola 2N3114
MMBF112L Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty	OCR Scan	PDF	06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

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BSW67 Datasheets (31)

BSW67 Datasheets Context Search

BSW67

BSW67A

Untitled

data sheet BSW67A

Untitled

BSW67

Untitled

Untitled

BSW67A

BU606D

2N5415

Untitled

BSW68A 1990

BY206

bsw68

BSW68A

BSW68

bsw68a

BSW67

BY206

BSW66A

tube az2

2N2369At

MMBF112L