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NXP Semiconductors PCA9555BS,118 Interface - I/O Expanders I2C/SMBUS 16BIT GPIO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	PCA9555BS,118		77,689			1 $2.09 10 $1.52 100 $1.36 1000 $1.16 10000 $1.01	Buy Now
NXP Semiconductors PCA9547BS,118 Encoders, Decoders, Multiplexers & Demultiplexers 8-CH I2C MUX W/RESET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	PCA9547BS,118		49,282			1 $1.99 10 $1.47 100 $1.32 1000 $1.16 10000 $1.04	Buy Now
NXP Semiconductors PCA9535BS,118 Interface - I/O Expanders I2C/SMBUS 16BIT GPIO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	PCA9535BS,118		37,365			1 $1.65 10 $1.31 100 $1.2 1000 $1.09 10000 $1	Buy Now
NXP Semiconductors PCA9538BS,118 Interface - I/O Expanders 8-BIT I2C FM TP GPIO INT RST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	PCA9538BS,118		14,702			1 $1.79 10 $1.2 100 $1.07 1000 $0.916 10000 $0.846	Buy Now
NXP Semiconductors PCA9554ABS,118 Interface - I/O Expanders I2C I/O EXPANDER GP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	PCA9554ABS,118		7,788			1 $1.49 10 $1.11 100 $0.991 1000 $0.831 10000 $0.812	Buy Now

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BST 95 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BST95		Philips Semiconductors	N-Channel Vertical D-MOS Transistor		Original	PDF
BST95		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF

BST 95 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: FACTSHEET F-200 SUPPLEMENT LCW–108–10–T–S–230 BST–108–09–G–D–318–RA .025"SQ TERMINAL STRIPS LCW, BST SERIES Mates with: SSW, SSQ, ESW, ESQ, IDSS LCW , IDSD (BST) TYPE STRIP Specifications: LCW, BST 1 NO. PINS PER ROW PLATING OPTION LEAD	Original	PDF	F-200 1-800-SAMTEC-9
1-800-SAMTEC-9 Abstract: No abstract text available Text: F-203 SUPPLEMENT LCW–108–10–T–S–230 BST–108–09–G–D–318–RA .025"SQ TERMINAL STRIPS LCW, BST SERIES Mates with: SSW, SSQ, ESW, ESQ, IDSS LCW , IDSD (BST) TYPE STRIP 1 NO. PINS PER ROW PLATING OPTION LEAD STYLE ROW OPTION POST HEIGHT OTHER	Original	PDF	F-203 1-800-SAMTEC-9
TC5117400BSJ Abstract: TC51-1 BST60 Text: TOSHIBA TC5117400BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,	Original	PDF	TC5117400BSJ/BST-60/70 TC5117400BSJ/BST 300mil) interf16 DR16040794 TC5117400BSJ TC51-1 BST60
Untitled Abstract: No abstract text available Text: STHVDAC-253M Antenna tuning circuit Datasheet − production data Description The ST BST capacitance controller STHVDAC-253M is a high voltage digital to analog converter DAC , specifically designed to control and meet the wide tuning bias voltage requirement of the BST tunable capacitances.	Original	PDF	STHVDAC-253M STHVDAC-253M DocID025735
STHVDAC-303 Abstract: C0603COG1H101J MARKING AH murata STHVDAC-303F6 303C diode marking f6 5h Text: STHVDAC-303 High voltage BST capacitance controller Datasheet  production data Features • Dedicated ASIC to control BST tunable capacitances ■ Operation compliant with cellular systems requirements ■ Integrated boost converter with 3 programmable outputs from 0 to 30 V	Original	PDF	STHVDAC-303 STHVDAC-303 C0603COG1H101J MARKING AH murata STHVDAC-303F6 303C diode marking f6 5h
STHVDAC-303F6 Abstract: 0A121 Text: STHVDAC-303 High voltage BST capacitance controller Features • Dedicated ASIC to control BST tunable capacitances ■ Operation compliant with cellular systems requirements ■ Integrated boost converter with 3 programmable outputs from 0 to 30 V ■ Low power consumption	Original	PDF	STHVDAC-303 STHVDAC-303F6 0A121
5118160 Abstract: HYB3118160 HYB5118160 Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Fast Page Mode HYB5116160BSJ-50/-60 HYB5116160BSJ-50/-60 HYB3116160BSJ/BST(L)-50/-60 HYB3118160BSJ/BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature	Original	PDF	16-Bit HYB5116160BSJ-50/-60 HYB3116160BSJ/BST HYB3118160BSJ/BST HYB5116160 HYB3116160 HYB5118160 HYB3118160 5118160 HYB3118160 HYB5118160
HYB3116165BSJ Abstract: HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60 Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 HYB3118165BSJ/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature	Original	PDF	16-Bit HYB5116165BSJ-50/-60 HYB3116165BSJ/ HYB3118165BSJ/ HYB5116165 HYB3116165 HYB5118165 HYB3118165 HYB3116165BSJ HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60
smd code marking wl5 Abstract: Q67100-Q1188 BST60 Text: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature	Original	PDF	HYB3116165BSJ/BST HYB3118165BSJ/BST 16-Bit HYB3118165BSJ/BST-50) HYB3118165BSJ/BST-60) GPJ05853 HYB3116 165BSJ/BST P-SOJ-42 smd code marking wl5 Q67100-Q1188 BST60
Q67100-Q1192 Abstract: WL3 MARKING BST60 Text: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature	Original	PDF	HYB3116165BSJ/BST HYB3118165BSJ/BST 16-Bit HYB3118165BSJ/BST-50) HYB3118165BSJ/BST-60) GPJ05853 HYB3116 165BSJ/BST P-SOJ-42 Q67100-Q1192 WL3 MARKING BST60
BST60 Abstract: No abstract text available Text: HYB3116160BSJ/BST L -50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Performance:	Original	PDF	HYB3116160BSJ/BST HYB3118160BSJ/BST 16-Bit HYB3118160BSJ/BST-50) HYB3118160BSJ/BST-60) HYB3118160BSJAAAAAAAAAAAAAAAAAAA HYB3116 160BSJ/BST 16-DRAM BST60
Q67100-Q1164 Abstract: SIEMENS BST H 05 - 110 SIEMENS BST f 05 90 BST60 Text: HYB 3116160BSJ/BST L -50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 1M x 16-Bit Dynamic RAM (1k & 4k-Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 ˚C operating temperature Performance:	Original	PDF	3116160BSJ/BST 3118160BSJ/BST 16-Bit 3118160BSJ/BST-50) 3118160BSJ/BST-60) 160BSJ/BST 16-DRAM GPJ05853 P-SOJ-42 Q67100-Q1164 SIEMENS BST H 05 - 110 SIEMENS BST f 05 90 BST60
TC5117405 Abstract: No abstract text available Text: DRAM Module AC Conditions No. 31 TC5117405BSJ/BST, TC5117445BSJ/BST TC51V17405BST/BST, TC51V17445BSJ/BST Electrical Characteristics and Recommended AC Operating Conditions Notes 6,7,8 THMxxxxxx-70 MIN MAX MIN MAX UNIT NOTES 104 - 124 - ns - 60 - 70 ns 9, 13, 14	OCR Scan	PDF	TC5117405BSJ/BST, TC5117445BSJ/BST TC51V17405BST/BST, TC51V17445BSJ/BST THMxxxxxx-60 THMxxxxxx-70 TC5117405
Untitled Abstract: No abstract text available Text: AND1741MST/BST 240 x 128 Dots Intelligent Graphics Displays The AND1741 MST/BST devices are compact, full dot matrix, with “white page” appearance, LCD modules that have an on board LCD controller T6963C and display memory (RAM). The AND1741 MST/BST can display TEXT information,	OCR Scan	PDF	1741M AND1741 T6963C) GD0222fl

BST60 Abstract: No abstract text available Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117400BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,	OCR Scan	PDF	TC5117400BSJ/BST-60/70 TC5117400BSJ/BST 300mil) DR16040794 00E7t SOJ26-P-300C) BST60
BST60 Abstract: No abstract text available Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117405BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,	OCR Scan	PDF	TC5117405BSJ/BST-60/70 TC5117405BSJ/BST TC5117405BSJ/BST 300mil) DR16070295 SOJ26-P-300C) BST60
BST60 Abstract: No abstract text available Text: TOSHIBA TC5116400BSJ/BST-6Q/70 MOS DIGITAL INTEGRATED CIRCUIT PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both	OCR Scan	PDF	TC5116400BSJ/BST-6Q/70 TC5116400BSJ/BST 300mil) DR16020794 0027bl3 TC5116400BSJ/BST-60/70 BST60
SIEMENS BST 68 Abstract: SIEMENS BST P 45 115 SIEMENS BST P SIEMENS BST t SIEMENS BST f 04 SIEMENS BST 5118165 SIEMENS BST Q SIEMENS BST N 35 SIEMENS BST G 03 60 Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 HYB3118165BS J/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature	OCR Scan	PDF	16-Bit HYB5116165BSJ-50/-60 HYB3116165BSJ/ HYB3118165BS P-SOJ-42 P-TSOPI1-50/44 400mil) SIEMENS BST 68 SIEMENS BST P 45 115 SIEMENS BST P SIEMENS BST t SIEMENS BST f 04 SIEMENS BST 5118165 SIEMENS BST Q SIEMENS BST N 35 SIEMENS BST G 03 60
SIEMENS BST h 05 90 Abstract: SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST h 05 60 SIEMENS BST P SIEMENS BST SIEMENS BST h 05 110 SIEMENS BST l 45 90 160BS SIEMENS BST G 03 60 Text: SIEMENS 1M x 16-Bit Dynamic RAM 1 k & 4k Refresh Fast Page Mode HYB5116160BSJ-50/-60 HYB5116160BSJ-50/-60 HYB3116160BSJ/BST(L)-50/-60 HYB3118160BSJ/BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature	OCR Scan	PDF	16-Bit HYB5116160BSJ-50/-60 HYB3116160BSJ/BST HYB3118160BSJ/BST HYB5116160 HYB3116160 HYB5118160 HYB3118160 SIEMENS BST h 05 90 SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST h 05 60 SIEMENS BST P SIEMENS BST SIEMENS BST h 05 110 SIEMENS BST l 45 90 160BS SIEMENS BST G 03 60
SIEMENS BST Abstract: SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60 Text: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 50 60 70	OCR Scan	PDF	16-Bit 3116160BSJ/BST 3118160BSJ/BST 3118160BSJ/BST-50) 3118160BSJ/BST-60) 3118160BSAS 160BSJ/BST 16-DRAM flS3Sb05 SIEMENS BST SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60
SIEMENS BST Abstract: SIEMENS BST h 05 90 SIEMENS BST h 05 110 SIEMENS BST h 35 SIEMENS BST L 35 90 SIEMENS BST 68 SIEMENS BST h 05 60 SIEMENS BST N 45 b 110 SIEMENS BST H 05 - 110 SIEMENS BST h 05 20 Text: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 50 60 70	OCR Scan	PDF	16-Bit 3116160BSJ/BST 3118160BSJ/BST 3118160BSJ/BST-50) 3118160BSJ/BST-60) 3118160BSJ/BST-70) 3116160BSJ/BST-50) 3116160BSJ/BST-60) 160BSJ/BST SIEMENS BST SIEMENS BST h 05 90 SIEMENS BST h 05 110 SIEMENS BST h 35 SIEMENS BST L 35 90 SIEMENS BST 68 SIEMENS BST h 05 60 SIEMENS BST N 45 b 110 SIEMENS BST H 05 - 110 SIEMENS BST h 05 20
SIEMENS BST Abstract: SIEMENS BST t SIEMENS BST h 35 SIEMENS BST L 35 90 BST70 BST60 Text: SIEMENS 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-50/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC	OCR Scan	PDF	16-Bit 3116165BSJ/BST 3118165BSJ/BST 3118165BSJ/BST-50) 3118165BSJ/BST-60) 165BSJ/BST SIEMENS BST SIEMENS BST t SIEMENS BST h 35 SIEMENS BST L 35 90 BST70 BST60
csr bc4 Abstract: TC5116400BSJ BST60 Text: TOSHIBA m C\|C]t:,724fl QD2fl2Ci;L 510 • -TC5116400BSJ/BSTW70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. TheTC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	PDF	724fl TC5116400BSJ/BSTW70 TC5116400BSJ/BST 300mil) csr bc4 TC5116400BSJ BST60
d8430 Abstract: 18165BSJ-60 BST60 Text: SIEM EN S 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-5Q/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 *C operating temperature • Performance: -50 -60 ^RAC RAS access time	OCR Scan	PDF	16-Bit 3116165BSJ/BST -5Q/-60/-70 3118165BSJ/BST 3118165BSJ/BST-50) 3118165BSJ/BST-60) 3118165BSJ/BST-70) 3116165BSJ/BST-50) 3116165BSJ/BST-60) d8430 18165BSJ-60 BST60

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BST 95 Search Results

BST 95 Price and Stock

NXP Semiconductors PCA9555BS,118

NXP Semiconductors PCA9547BS,118

NXP Semiconductors PCA9535BS,118

NXP Semiconductors PCA9538BS,118

NXP Semiconductors PCA9554ABS,118

BST 95 Datasheets (2)

BST 95 Datasheets Context Search

Untitled

1-800-SAMTEC-9

TC5117400BSJ

Untitled

STHVDAC-303

STHVDAC-303F6

5118160

HYB3116165BSJ

smd code marking wl5

Q67100-Q1192

BST60

Q67100-Q1164

TC5117405

Untitled

BST60

BST60

BST60

SIEMENS BST 68

SIEMENS BST h 05 90

SIEMENS BST

SIEMENS BST

SIEMENS BST

csr bc4

d8430