BOX 53C DARLINGTON POWER TRANSISTOR Search Results

BOX 53C DARLINGTON POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BOX 53C DARLINGTON POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
box 53c Abstract: box 53c IC 10 amp npn darlington power transistors 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 box 54c IC Text: MOTOROLA Order this document by BDX53B/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain —	Original	PDF	BDX53B/D* BDX53B/D box 53c box 53c IC 10 amp npn darlington power transistors 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 box 54c IC
BOX 53C darlington power transistor Abstract: 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 BDX53C MOTOROLA Text: MOTOROLA Order this document by BDX53B/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain —	Original	PDF	BDX53B/D* BDX53B/D BOX 53C darlington power transistor 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 BDX53C MOTOROLA
BOX 53C IC Abstract: BOX 53C darlington power transistor box 54c IC BDX53BG BDX54CG pin orientation for bdx53c transistor BDX54B Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc	Original	PDF	BDX53B, BDX53C BDX54B, BDX54C BDX53B/D BOX 53C IC BOX 53C darlington power transistor box 54c IC BDX53BG BDX54CG pin orientation for bdx53c transistor BDX54B
BOX 53C IC Abstract: 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 Text: ON Semiconductort NPN BDX53B Plastic Medium-Power Complementary Silicon Transistors BDX53C PNP BDX54B . . . designed for general–purpose amplifier and low–speed switching applications. BDX54C • High DC Current Gain — • • • • hFE = 2500 Typ @ IC = 4.0 Adc	Original	PDF	BDX53B BDX53C BDX54B BDX54C BDX53B, BDX53C, 220AB r14525 BDX53B/D BOX 53C IC 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100
Untitled Abstract: No abstract text available Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc	Original	PDF	BDX53B, BDX53C BDX54B, BDX54C BDX53C, BDX53B/D
BOX 53C IC Abstract: 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 VD151 54C20 Text: ON Semiconductor NPN BDX53B Plastic Medium-Power Complementary Silicon Transistors BDX53C PNP BDX54B . . . designed for general–purpose amplifier and low–speed switching applications. BDX54C • High DC Current Gain — • • • • hFE = 2500 Typ) @ IC = 4.0 Adc	Original	PDF	BDX53B BDX53C BDX54B BDX54C BDX53B, BDX53C, 220AB r14525 BDX53B/D BOX 53C IC 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 VD151 54C20
pin orientation for bdx53c transistor Abstract: box 54c IC BDX53B 1N5825 BDX53BG BDX53C BDX53CG BDX54B BDX54C MSD6100 Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium−Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 4.0 Adc	Original	PDF	BDX53B, BDX53C BDX54B, BDX54C BDX53C, BDX53B/D pin orientation for bdx53c transistor box 54c IC BDX53B 1N5825 BDX53BG BDX53C BDX53CG BDX54B BDX54C MSD6100
box 53c Abstract: BDX53BG 100 amp npn darlington power transistors AMP contact assembly bdx53cg 5 amp npn darlington power transistors 500 watts amplifier box 53c IC 1N5825 BDX53B Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features •ăHigh DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc	Original	PDF	BDX53B, BDX53C BDX54B, BDX54C BDX53C, BDX53B/D box 53c BDX53BG 100 amp npn darlington power transistors AMP contact assembly bdx53cg 5 amp npn darlington power transistors 500 watts amplifier box 53c IC 1N5825 BDX53B
bdx54c equivalent Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc	Original	PDF	BDX53B, BDX53C, 220AB BDX53B BDX53C BDX54B BDX54C TIP73B TIP74 TIP74A bdx54c equivalent BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	PDF	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
2n3055 motorola Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046 Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,	Original	PDF	1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
BOX 53C darlington power transistor Abstract: box 54c IC box 53c BDX53B 50/BOX 53C darlington power transistor Text: MOTOROLA Order this document by BDX53B/D SEMICONDUCTOR TECHNICAL DATA NPN Plastic M edium -Pow er Com plem entary Silicon Transistors BDX53B BDX53C PNP . . . designed for general-purpose amplifier and low -speed switching applications. • • • • •	OCR Scan	PDF	BDX53B/D BDX53B, BDX53C, -220A BDX53B BDX53C BDX54B BDX54C BOX 53C darlington power transistor box 54c IC box 53c 50/BOX 53C darlington power transistor
HBF4727A Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product	OCR Scan	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan	PDF

ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	PDF	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
2M2222A Abstract: pj 1349 fxp ERI - 35 - 2 YE 0515 TRANSFORMER 2m2222 cmps a42 transistor TTL 74LSxx dg 2n60 diode cross reference PJ32 fj series capacitor 3uF 600V STB523 Text: W tipt H E W L E T T mL'HM P AC KAR D HP 1000 M/E/F-Series Computers Engineering and Reference Documentation HEWLETT-PACKARD COMPANY Data Systems Division 11000 Wolfe Road Cupertino, California 95014 MANUAL PART NO. 92851-90001 Printed in U.S.A. March 1981	OCR Scan	PDF	2991A 2M2222A pj 1349 fxp ERI - 35 - 2 YE 0515 TRANSFORMER 2m2222 cmps a42 transistor TTL 74LSxx dg 2n60 diode cross reference PJ32 fj series capacitor 3uF 600V STB523
DAC89EX Abstract: BB-3500 OP01CP AD540JH bb3500 AD308H mA747PC 6502 microprocessor REF05 cookbook for ic 555 Text: PM 11984DATA B O O K The P M I C o m m itm e n t P M I is c o m m itte d to b u ild in g lo n g te rm c u s to m e r re la tio n s h ip s resulting in m u tu a l g ro w th . At PM I w e d e d ic a t e ourselves to le a d e rs h ip in c u s to m e r service,	OCR Scan	PDF	11984DATA bey-400 011-5761-VSON-IN. DAC89EX BB-3500 OP01CP AD540JH bb3500 AD308H mA747PC 6502 microprocessor REF05 cookbook for ic 555
mcm6830 Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2 Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories	OCR Scan	PDF	MS800MM0S MC3870 MC14S00B, MC141000/1206 M2900 M10800 M6800 MC14500B, MC141000/1200 mcm6830 EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2

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BOX 53C DARLINGTON POWER TRANSISTOR Search Results

BOX 53C DARLINGTON POWER TRANSISTOR Result Highlights (5)

BOX 53C DARLINGTON POWER TRANSISTOR Datasheets Context Search

box 53c

BOX 53C darlington power transistor

BOX 53C IC

BOX 53C IC

Untitled

BOX 53C IC

pin orientation for bdx53c transistor

box 53c

bdx54c equivalent

tip122 tip127 audio amp schematic

2n3055 motorola

BOX 53C darlington power transistor

HBF4727A

Transistor 2SA 2SB 2SC 2SD

ksd 302 250v, 10a

y51 h 120c

2M2222A

DAC89EX

mcm6830