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    BJT HIGH VOLTAGE Search Results

    BJT HIGH VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    BJT HIGH VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		PDF DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA

    TRANSISTORS BJT list

    Abstract: bjt specifications fairchild power bjt BJT Driver input output bjt npn transistor j3 bjt Power bjt fairchild power bjt datasheet MAX16803 MAX16803ATE
    Text: 19-0828; Rev 0; 5/07 MAX16803EVKIT+BJT Evaluation Kit+ The MAX16803EVKIT+BJT EV kit demonstrates a high-current LED driver with accurate current control based on the MAX16803 current regulator. This EV kit is capable of supplying regulated LED currents of up to


    Original     		PDF MAX16803EVKIT MAX16803 MAX16803 TRANSISTORS BJT list bjt specifications fairchild power bjt BJT Driver input output bjt npn transistor j3 bjt Power bjt fairchild power bjt datasheet MAX16803ATE

    9435R

    Abstract: NSB9435T1
    Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original     		PDF NSB9435T1 r14525 NSB9435T1/D 9435R NSB9435T1

    transistor bd 370

    Abstract: No abstract text available
    Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original     		PDF NSB9435T1 r14525 NSB9435T1/D transistor bd 370

    9435R

    Abstract: transistor BD 240
    Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original     		PDF NSB9435T1 r14525 NSB9435T1/D 9435R transistor BD 240

    crt horizontal deflection circuit

    Abstract: flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver
    Text: September 19, 2000 AN9009 Analysis of a Resonant Type High Voltage Fly-back Converter in a CRT Horizontal Deflection Circuit and its High Voltage BJT Selection Guide-Line Dr. In-Hwan Oh Fairchild Korea Semiconductor Tel: 82-32-680-1380, Fax:82-32-680-1317


    Original     		PDF AN9009 crt horizontal deflection circuit flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver

    Drive Base BJT

    Abstract: Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576
    Text: Testing Key Parameters of High Voltage BJTs for RDFC Applications Application Note AN-2576 INTRODUCTION Certain primary switch BJT parameters are particularly important for correct operation and longterm reliability of RDFC designs. : • Current gain hFE


    Original     		PDF AN-2576 AN-2337 AN-2576-0809A 25-Sep-2008 Drive Base BJT Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT560Q 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 


    Original     		PDF FMMT560Q -500V -150mA 500mA 100mA AEC-Q101 DS37020

    MYXB21200-20GAB

    Abstract: silicon carbide
    Text: SiC Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • Two devices in one hermetic package. • High blocking voltage with low R on • High voltage 1200V isolation in a small package


    Original     		PDF MYXB21200-20GAB 210OC Double1200 MYXB21200-20GAB silicon carbide

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT459Q 500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Feature 


    Original     		PDF FMMT459Q 150mA 500mA 625mW -90mV 120mA AEC-Q101 DS37019

    9435R

    Abstract: NSB9435T1 NSB9435T1G power BJT PNP
    Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com • Collector −Emitter Sustaining Voltage − POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc


    Original     		PDF NSB9435T1 OT-223 NSB9435T1/D 9435R NSB9435T1 NSB9435T1G power BJT PNP

    Untitled

    Abstract: No abstract text available
    Text: MJD32CQ 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features           


    Original     		PDF MJD32CQ -100V MJD31CQ AEC-Q101 DS37050

    Untitled

    Abstract: No abstract text available
    Text: MJD31CQ 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features           


    Original     		PDF MJD31CQ MJD32CQ AEC-Q101 DS37049

    4030p

    Abstract: No abstract text available
    Text: NJT4030P Preferred Device Product Preview Bipolar Power Transistors PNP Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc POWER BJT IC = 3.0 AMPERES BVCEO = 40 VOLTS • High DC Current Gain −


    Original     		PDF NJT4030P OT-223 4030P 4030PG NJT4030P/D

    MMJT9410

    Abstract: MMJT9410G
    Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original     		PDF MMJT9410 OT-223 MMJT9410/D MMJT9410 MMJT9410G

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt
    Text: BJT Primary Switch Ratings In RDFC Applications Application Note AN-2337 When the transistor is off and a high collector voltage is applied, the electric field between base and collector causes depletion of this N- region and turns it into an insulator. The voltage


    Original     		PDF AN-2337 DS-1423) AN-2497) AN-2337-0904 07-Apr-2009 "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt

    MMJT9435

    Abstract: No abstract text available
    Text: ON Semiconductort MMJT9435 Bipolar Power Transistors ON Semiconductor Preferred Device PNP Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —


    Original     		PDF MMJT9435 r14525 MMJT9435/D MMJT9435

    MMJT9410

    Abstract: power bjt
    Text: ON Semiconductort MMJT9410 Bipolar Power Transistors ON Semiconductor Preferred Device NPN Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —


    Original     		PDF MMJT9410 r14525 MMJT9410/D MMJT9410 power bjt

    Untitled

    Abstract: No abstract text available
    Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original     		PDF MMJT9410 MMJT9410/D

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features


    Original     		PDF FZT751Q OT223 -300mV FZT651Q AEC-Q101 DS36963

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. •


    Original     		PDF FZT651Q OT223 J-STD-020 300mV MIL-STD-202, DS36917

    DWEP

    Abstract: stud type diodes
    Text: Diodes Diodes for High Switching Frequencies Diodes for General Purpose Applications Fast Recovery Epitaxial Diodes FRED Rectifier Diodes Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free­


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Diodes Diodes for High Switching Frequencies Diodes for General Purpose Applications Fast Recovery Epitaxial Diodes FRED Rectifier Diodes Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free­


    OCR Scan     		PDF

    diode avalanche DSA 42

    Abstract: No abstract text available
    Text: Diodes Diodes for High Switching Frequencies Diodes for General Purpose Applications Fast Recovery Epitaxial HiPerFRED; FRED Rectifier Diodes Diodes Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free­


    OCR Scan     		PDF