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    Untitled

    Abstract: No abstract text available
    Text: P h ilip s S e m ic o n d u c to rs ^ bb53B31 0038177 STT H IA P X Preliminary specification Silicon planar epitaxial transistor 2N5680 N AUER PHILIPS/DISCRETE bBE D QUICK REFERENCE DATA PARAMETER SYMBOL collector current MIN. MAX. UNIT - V - 120 V - 1 A Tcase < 25 °C


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    PDF bb53B31 2N5680 bb53T31

    Bfy51

    Abstract: No abstract text available
    Text: bTE T> m bbS3T31 DDSTTTD A3D H A P X 11 N AMER PHILIPS/DISCRETE II BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for general purpose industrial applications. QUICK REFERENCE DATA BFY50 Collector-base voltage open emitter


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    PDF bbS3T31 BFY50 BFY51 BFY52 Bfy51

    C6V2

    Abstract: No abstract text available
    Text: • ^53=531 0025732 354 M A R X N AMER PHILIPS/DISCRETE BZV55 SERIES L7E D 7 V VOLTAGE REGULATOR DIODES FOR SURFACE MOUNTING Silicon planar diodes designed fo r use as low-voltage stabilizers o r voltage references. They are available in the international standardized E24 ± 5% range, and also in tolerance ranges o f 2% and 3%.


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    PDF BZV55 OD80C volt55 bb53t 0DE5744 bb53B31 002S7M5 C6V2

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E J> • bbS3^31 0Q264Q7 126 H A P X Philips specification Silicon diffused power transistors QUICK REFERENCE DATA DESCRIPTION PINNING 1 2 3 SYMBOL VcESM


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    PDF 0Q264Q7 BUT11F/BUT11AF BUT11F BUT11AF 11F/BUT11AF

    Untitled

    Abstract: No abstract text available
    Text: BDX35 BDX36 BDX37 _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N transistors in TO-126 plastic envelopes intended for high current switching applications, e.g. inverters, and switching regulator circuits. QUICK REFERENCE DATA


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    PDF BDX35 BDX36 BDX37 O-126 G034flbD