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    onsemi BAS40LT1G

    DIODE SCHOTTKY 40V 120MA SOT23-3
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    DigiKey BAS40LT1G Reel 30,000 3,000
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    BAS40LT1G Cut Strips 2,310 10 Weeks 1
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    onsemi SBAS40LT1G

    DIODE SCHOTTKY 40V 120MA SOT23-3
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    DigiKey SBAS40LT1G Cut Tape 22,600 1
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    SBAS40LT1G Reel 22,600 3,000
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    SBAS40LT1G Digi-Reel 22,600 1
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    Rochester Electronics SBAS40LT1G 480,000 1
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    New Advantage Corporation SBAS40LT1G 9,000 1
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    onsemi BAS40LT1

    DIODE SCHOTTKY 40V SOT23
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    DigiKey BAS40LT1 Reel 3,000
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    Bristol Electronics BAS40LT1 2,219
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    BAS40LT1 1,399 45
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    Quest Components BAS40LT1 15,010
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    onsemi SBAS40LT3G

    Schottky Diodes & Rectifiers 40 V Schottky Diode
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    Mouser Electronics SBAS40LT3G 8,649
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    onsemi BAS40LT1G.

    Rectifier, Schottky, 0.12A, 40V, Sot-23; Diode Configuration:Single; Repetitive Peak Reverse Voltage:40V; Average Forward Current:120Ma; Forward Voltage Max:1V; Forward Surge Current:200Ma; Operating Temperature Max:150°C Rohs Compliant: Yes |Onsemi BAS40LT1G.
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    Newark BAS40LT1G. Reel 3,000
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    BAS40LT1 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAS40LT1 Leshan Radio Company Schottky Barrier Diode Original PDF
    BAS40LT1 Motorola Silicon Diode Original PDF
    BAS40LT1 On Semiconductor Schottky Barrier Diode Original PDF
    BAS40LT1-D On Semiconductor Schottky Barrier Diodes Original PDF
    BAS40LT1G On Semiconductor SCHOTTKY BARRIER DIODES Original PDF

    BAS40LT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAS40LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAS40LT1/D SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAS40LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces


    Original
    PDF BAS40LT1/D BAS40LT1 236AB) BAS40LT1

    BAS40LT1

    Abstract: No abstract text available
    Text: ON Semiconductort BAS40LT1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where


    Original
    PDF BAS40LT1 r14525 BAS40LT1/D BAS40LT1

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS40LT1 Preliminary Information Schottky Barrier Diodes Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces


    Original
    PDF BAS40LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    BAS40LT1G

    Abstract: BAS40LT1
    Text: BAS40LT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where


    Original
    PDF BAS40LT1 BAS40LT1/D BAS40LT1G BAS40LT1

    BAS40LT1G

    Abstract: BAS40LT3G
    Text: BAS40LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where


    Original
    PDF BAS40LT1G BAS40LT1/D BAS40LT1G BAS40LT3G

    BAS40LT1

    Abstract: BAS40LT1G BAS40LT3G
    Text: BAS40LT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where


    Original
    PDF BAS40LT1 BAS40LT1/D BAS40LT1 BAS40LT1G BAS40LT3G

    Tape and Reel Packaging Specifications Brochure,

    Abstract: No abstract text available
    Text: BAS40LT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where


    Original
    PDF BAS40LT1 Tape and Reel Packaging Specifications Brochure,

    BAS40LT1

    Abstract: No abstract text available
    Text: BAS40LT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where


    Original
    PDF BAS40LT1 r14525 BAS40LT1/D BAS40LT1

    Diode SOT-23 marking J

    Abstract: marking t marking 43 BAS40 BAS40-04 BAS40-05 BAS40-06 BAS40LT1 MA MARKING SOT23 MV MARKING SOT23
    Text: BAS40LT1 SCHOTTKY DIODE Features Power dissipation 。 P D : 200 mW Tamb=25 C Pluse Drain I F : 200 mA Reverse Voltage V R : 40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C + SOT-23 3 1 2 1. + BAS40 Marking:43 -


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    PDF BAS40LT1 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06 100mA 200mA Diode SOT-23 marking J marking t marking 43 BAS40LT1 MA MARKING SOT23 MV MARKING SOT23

    BAS40LT1G

    Abstract: No abstract text available
    Text: BAS40LT1G, BAS40LT1G, BAS40LT3G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


    Original
    PDF BAS40LT1G, SBAS40LT1G, BAS40LT3G BAS40LT1/D BAS40LT1G

    DIODE SCHOTTKY 30V 200MA SOT23

    Abstract: BAS40 BAS40-04 BAS40-05 BAS40-06 BAS40LT1
    Text: BAS40LT1 SCHOTTKY DIODE Features Power dissipation 。 P D : 200 mW Tamb=25 C Pluse Drain I F : 200 mA Reverse Voltage V R : 40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C + SOT-23 3 1 2 1. 0.4 0.95 BAS40-04 Marking:44


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    PDF BAS40LT1 OT-23 BAS40-04 BAS40 BAS40-05 BAS40-06 100mA 200mA DIODE SCHOTTKY 30V 200MA SOT23 BAS40LT1

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort BAS40LT1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where


    Original
    PDF BAS40LT1 236AB) BAS40LT1/D

    BAS40LT1

    Abstract: BAS40LT1G BAS40LT3G sot-23 Marking B1
    Text: BAS40LT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where


    Original
    PDF BAS40LT1 BAS40LT1 BAS40LT1G BAS40LT3G sot-23 Marking B1

    BAS40LT1

    Abstract: BAS40LT1G
    Text: BAS40LT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where


    Original
    PDF BAS40LT1 BAS40LT1/D BAS40LT1 BAS40LT1G

    Schottky barrier sot-23 40V

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Schottky Barrier Diode BAS40LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit 3 protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Min- 1 2 CASE 318–08, STYLE 11


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    PDF BAS40LT1 236AB) BAS40LT1 Schottky barrier sot-23 40V

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    CS5323

    Abstract: BAS40LT1 CS5323GDW20 CS5323GDWR20 MTD3302 MTP75N06HD NCP5351
    Text: CS5323 Three-Phase Buck Controller with 5-Bit DAC The CS5323 is a three–phase step down controller that incorporates all control functions required to power next generation processors. Proprietary multi–phase architecture guarantees balanced load current


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    PDF CS5323 CS5323 r14525 CS5323/D BAS40LT1 CS5323GDW20 CS5323GDWR20 MTD3302 MTP75N06HD NCP5351

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


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    PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original
    PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original
    PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


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    PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAS40LT1/D SEMICONDUCTOR TECHNICAL DATA S chottky Barrier Diodes BAS40LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clam ping. Extrem ely low forward voltage reduces


    OCR Scan
    PDF BAS40LT1/D BAS40LT1 -236A

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Prelim inary Inform ation BAS40LT1 S chottky B arrier Diodes Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces


    OCR Scan
    PDF BAS40LT1 OT-23 O-236AB)