VTCXO
Abstract: 9922 515 000 SMD ic catalogue B8 MARKING CODE 1-917F
Text: SARONIX B.V. DATA SHEET 9922 515 000. series Voltage controlled Temperature Compensated Crystal Oscillator Type VTCXO in B8 and B9 sine wave Product specification Supersedes data of 1998 May 12 File under SARONIX B.V., SBV2 1998 Nov 10 SaRonix B.V. Doetinchem, The Netherlands
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bosch cj125
Abstract: CJ125 bosch Knock sensor automotive bosch ic driver bosch fuel pressure sensor j1b4 piezoelectric injector woodward+8290-038 bosch 12 volt relay 9141-L
Text: Woodward 36320 p.2 1–Input Signal Conditioning 1.1 KEY_SW J1-B2 , BATT (J1-B8), DRVG A (J2-A16), DRVG B (J2-A24), DRVG C (J2-A15), DRVG D (J2-B9), XDRG_A (J1-B24), XDRG_B (J1-A24), EST_RTN (J2-A22) See Freescale MPC565 Datasheet for description of processor resources.
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J2-A16)
J2-A24)
J2-A15)
J1-B24)
J1-A24)
J2-A22)
MPC565
J2-A24
J1-B24
J1-A14,
bosch cj125
CJ125
bosch Knock sensor
automotive bosch ic driver
bosch fuel pressure sensor
j1b4
piezoelectric injector
woodward+8290-038
bosch 12 volt relay
9141-L
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T2D DIODE
Abstract: T2d 86 diode T3D DIODE T2D 87 diode T2D DIODE 49 T2D DIODE 94 AK9 RJ12 transistor ad149 T2D 79 diode C1959
Text: 5 4 3 VIO 2 1 VCC3V3 C2 C1 + AD[31:0] 0.1uF 22uF B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 D VCC5V AD31 AD29 AD27 AD25 VCC3V3 AD21 AD19 VCC3V3 AD17 -CBE2 -IRDY VCC3V3 -DEVSEL -LOCK -PERR -SERR VCC3V3 -CBE1 AD14 VCC3V3 AD12 AD10 AD8 AD7 VCC3V3 AD5 AD3 AD1 VIO VCC5V
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PMEAD30
LED-1206
PROJECTS\T86VSH328\SCHEMATIC\T86VSH328SCH
XRT86VSH328
T2D DIODE
T2d 86 diode
T3D DIODE
T2D 87 diode
T2D DIODE 49
T2D DIODE 94
AK9 RJ12
transistor ad149
T2D 79 diode
C1959
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d484
Abstract: 4G87 D484 transistor 8e89 6542 FG7G b47f A8 Jh
Text: =;F22 +?<.22;, FC@>9 FG7G: E:@7K ;OL[\YOZ T }*-xw. BHGCHG T vu 6BAGEB? T |BJ BAeFG4G8 E8F<FG4A68 T +;BGB <FB?4G<BA T jmhh0 7<8?86GE<6 FGE8A:G; T ,Bz- 6B@C?<4AG 9:F8E>DG>CB zx-kk -8E<8F B998E kekj0vu <ACHG 6BAGEB? 4A7 HF8 }*-xw. G86;AB?B:L GB CEBI<78 4A 86BAB@<64? 4A7 E8?<45?8 @8G;B7 B9
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FG4A68
B998E
86BAB
FG4A68
FHCCE8FF87f
46GH4?
74G4F
E898E8A68f
6BAG46G
78G8E
d484
4G87
D484 transistor
8e89
6542
FG7G
b47f
A8 Jh
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20dgdl065
Abstract: No abstract text available
Text: SK 20 DGDL 065 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper 234 & &; 2'34 $- ./01 Values $ - ./ 76 0 $ - ./ 76 0 1 < 9 $? Units 566 .8 9: 87 =8 >.6 2 ( 2 @86 AAA B9/6
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Untitled
Abstract: No abstract text available
Text: SK 20 DGDL 065 ET Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper 234 & &; 2'34 $- ./01 Values $ - ./ 76 0 $ - ./ 76 0 1 < 9 $? Units 566 .8 9: 87 =8 >.6 2 ( 2 @86 AAA B9/6 0 ./ 97 /6 =5
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6188 rectifier
Abstract: 8J bridge rectifier 3 phase bridge rectifier
Text: SK 20 DGDL 065 ET Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper 234 & &; 2'34 $- ./01 Values $ - ./ 76 0 $ - ./ 76 0 1 < 9 $? Units 566 .8 9: 87 =8 >.6 2 ( 2 @86 AAA B9/6 0 ./ 97 /6 =5
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6BH7
Abstract: DCWM PR78A 91AB A13A 74g4f diac 8 v 6b p 94 8a7l 6bfp
Text: 86.-/6 \y+2`dceu] ;9<91AB?5 8978 >=D5? ?5:1E 6IFSTQIR W gah>0 7<8?86GE<6 FGE8A:G; u<?8 }Bamtdfghdj \58GJ88A 6B<? 4A7 6BAG46GF] W w84IL ?B47 HC GB hccc0p W x784? 9BE @BGBE FJ<G6;<A: u<?8 }Bam,llffkcj W 1<G;FG4A7 <AEHF; 6HEE8AG B9 kcp W *rq [ +r ?4LBHGF 4I4<?45?8
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\58GJ88A
6BAG46GF]
w84IL
rBAG46G
FG4A68
rBAG46G
6BH7
DCWM
PR78A
91AB
A13A
74g4f
diac 8 v
6b p 94
8a7l
6bfp
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8Q transistor
Abstract: 8G89
Text: =;020; @>A>6FGD: =><= CBI:D D:?6J ;OLYZWOX X ihu JN@K:?@E> :8G89@C@KP X mB4 ;@<C<:KI@: JKI<E>K? b9<KN<<E :F@C 8E; :FEK8:KJc z@C< ,Ffryikklpi X 1F:B<KJ 8M8@C89C< X i zFID u di zFID v 8E; i zFID w :FE=@>LI8K@FEJ X 58J? K@>?K 8E; =CLO GIFF=<; KPG<J 8M8@C89C<
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8BAF68F
8Q transistor
8G89
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8Q transistor
Abstract: 1E 8J x30u
Text: =;020; @>A>6FGD: =><= CBI:D D:?6J ;OLYZWOX X ihu JN@K:?@E> :8G89@C@KP X mB4 ;@<C<:KI@: JKI<E>K? b9<KN<<E :F@C 8E; :FEK8:KJc z@C< ,Ffryikklpi X 1F:B<KJ 8M8@C89C< X i zFID u di zFID v 8E; i zFID w :FE=@>LI8K@FEJ X .C8JK@: J<8C<; 8E; =CLO GIFF=<; KPG<J 8M8@C89C<
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8BAF68F
8Q transistor
1E 8J
x30u
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DGDL
Abstract: 20dgdl065
Text: SK 20 DGDL 065 ET Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper 234 & &; 2'34 $- ./01 Values $ - ./ 76 0 $ - ./ 76 0 1 < 9 $? Units 566 .8 9: 87 =8 >.6 2 ( 2 @86 AAA B9/6 0 ./ 97 /6 =5
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diode b26
Abstract: micro SD Card connector sot23 a36 8q diode sot23 sn74ls574 AD27 AD29 AD30
Text: P3V VIO P2 P1 PCI_5V A1 1 P3V VIO VIO A2 2 +12V_PCI A3 3 TCK TDO TDI X7 1 A8 8 A9 9 X11 A10 10 1 X12 X10 C55 2 7 B7 1 X50 TOOL_130 TOOL_130 1 C26 C20 0.1 0.1 CC0805 2 CC0805 2 1 1 CC0805 8 B8 1 9 B9 1 C3 C1 0.01 0.01 CC0805 2 2 CC0805 10 B10 A11 11 11 B11
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CC0805
CR0805
RC1206
NDT452P
diode b26
micro SD Card connector
sot23 a36
8q diode sot23
sn74ls574
AD27
AD29
AD30
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BLM21P221
Abstract: BLM21P221SG NC7SZ08P5 16V 100uf ISP1161 BAU10 V5R12
Text: 1 2 B1 B2 B3 B4 B5 J1 3 DATA[0.15] B6 B7 B8 B9 B10 4 DATA[0.15] V+3.3 V+5 A A B DATA15 DATA13 DATA11 DATA9 DATA7 DATA5 DATA3 DATA1 NC NC NC NC NC NC NC NC NC NC NC ADDR25 ADDR25 C ADDR3 ADDR3 NC NC NC NC NC NC NC NC NC NC NC V+3.3 V+5 NC NC NC NC NC NC NC
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DATA15
DATA13
DATA11
ADDR25
134nk
SN75240PW
BLM21P221
BLM21P221SG
NC7SZ08P5
16V 100uf
ISP1161
BAU10
V5R12
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20dgdl065
Abstract: No abstract text available
Text: SK 20 DGDL 065 ET power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper 234 & &; 2'34 $- ./01
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8a7l
Abstract: 4E46 BAF 8
Text: 75-.-55 ]y+2`dgduu^ :8;80@A>4 7867 =<C4> >490D 5IFSTQIR S dcp FJ<G6;<A: 64C45<?<GL u<?8 }Bamtdffgkd S d uBE@ p _d uBE@ q 4A7 d uBE@ r 6BA9<:HE4G<BAF S h>0 7<8?86GE<6 FGE8A:G; ]58GJ88A 6B<? 4A7 6BAG46GF^ S -B6>8GF 4I4<?45?8 u<?8 }Bam,hccdlijd S 14F; G<:;G 4A7 9?HK CEBB987 GLC8F 4I4<?45?8
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64C45<
58GJ88A
6BAG46GF^
CEBB987
rBAG46G
FG4A68
-G4A74E7m
rBAG46G
-G4A74E7
8a7l
4E46
BAF 8
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T25 4 F8
Abstract: t25 4 k8 MB86R01EB01-COR MB86R MB86R01EB01-CORE t25 4 h8 C49-C54 R101 R104 R106
Text: 5 9 4 3 2 1 C_IDLLRST D_MDT[31.0] 3.3VC R85 0 N.M 3.3VC R86 10k D_MA[12.0] U1B AC21 D R93 R95 10k AD22 0 N.M DGND AE22 1.8VD 1.8VD R100 200 1% P23 R102 200 1% N23 DGND R91 10k 1% AC22 C17 K25 VREF1 0.1/1005 V25 VREF0 R113 10k 1% DGND C19 C20 0.1/1005 0.1/1005
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BLM18PG300SN1B
EDE5116AHSE
MB86R01EB01-CORE
E231E-D001
T25 4 F8
t25 4 k8
MB86R01EB01-COR
MB86R
t25 4 h8
C49-C54
R101
R104
R106
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MCP3008
Abstract: MCP3004 AN688 AN699 MCP3204 MCP3208 MCP601 REF198 3008
Text: MCP3004/3008 2.7V 4-Channel/8-Channel 10-Bit A/D Converters with SPI Serial Interface FEATURES • • • • • • CH0 CH1 CH2 CH3 NC NC DGND 14 13 12 11 10 9 8 VDD VREF AGND CLK DOUT DIN CS/SHDN PDIP, SOIC CH0 CH1 CH2 CH3 CH4 CH5 CH6 CH7 APPLICATIONS
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MCP3004/3008
10-Bit
MCP3008
MCP3004)
MCP3008)
DS21295A-page
MCP3008
MCP3004
AN688
AN699
MCP3204
MCP3208
MCP601
REF198
3008
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MCP3008
Abstract: comparator 10 bit MCP3004 MCP3208 AN688 AN699 MCP3204 MCP601 REF198
Text: 21295a.book Page 1 Wednesday, March 22, 2000 12:07 PM MCP3004/3008 2.7V 4-Channel/8-Channel 10-Bit A/D Converters with SPI Serial Interface FEATURES • • • • • • CH0 CH1 CH2 CH3 NC NC DGND 14 13 12 11 10 9 8 VDD VREF AGND CLK DOUT DIN CS/SHDN
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21295a
MCP3004/3008
10-Bit
MCP3008
MCP3004)
MCP3008)
MCP3008
comparator 10 bit
MCP3004
MCP3208
AN688
AN699
MCP3204
MCP601
REF198
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N458
Abstract: 8e89 C887 6ba9 G4EG 74G4 HC74G 0WQ1 A68g
Text: `echlmjmgr fmn hpkal beilg ald elqinmlkelo MK?J F;GM;E IJHAJ;FF;<E? FHLCHG =HGLJHEE?J 4d51;PCK BCAB KI?> KL;G>1;EHG? K?JC?K 6d748\RY =RPQ FWNNM @VZRVU 9VUZXVSSNX 2C@946=F5C@947=F3 -C_ W^ [\_W[ZRX2. 9 IF=1BK FRWZ VUR_`]U^ : g48G@EJH 8B>EG@I?CH 9N I?< :EC9@D8I@ED E= pq :ECC8D;H
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6d748\RY
F8G89B<
lq23lqrqk
08GAk
N458
8e89
C887
6ba9
G4EG
74G4
HC74G
0WQ1
A68g
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TDC1002
Abstract: TDC1005B9A TDC1001 TDC1006 TDC1005 PIN-13DSB 1005B9A TDC1011 TMC2011 TMC3220
Text: 7 # ? rV Memory/Storage C lo c k P ro d u c t D esc rip tion S ize R a te 1 M H z P o w e r1 (W a tts ) Package G ra d e s2 N o te s Page TD C 10 0 5 Shift Register 64 x 2 Bit 25 24 0.6 0.6 B9 B9 16 Pin DIP 16 Pin DIP C A Expandable/Cascadable, K3 TD C 10 0 6
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TDC1005
TDC1006
TDC1011
3-18x8
21-36x4
TMC2011
TNIC2111
1-16x8
TDC1002
TDC1005B9A
TDC1001
PIN-13DSB
1005B9A
TMC3220
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Untitled
Abstract: No abstract text available
Text: Data Sheet February 1994 ; ^ AT&T Microelectronics FE200-Series Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 200 W Features High efficiency: 82.5% typical FE200A9 High power density. 33 W in3 (FE200A9, B9) Parallel operations with load sharing
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FE200-Series
FE200A9)
FE200A9,
D2S63T
FE200A9
FE200B9
FE200F9
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HX191
Abstract: No abstract text available
Text: FACTSHEET F-199 am tec 025 sq SMT SOCKET SSM SERIES Mates with: TSW, MTSW, LCW, TST, TSS, ZST, ZSS, DW, EW, ZW, TSM NO. PINS PER ROW S SM Features: • High quality double beam contacts insure perform ance * Can b9 tgrminatQd in 1ourstyl9s, dgpgnding on your application:
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F-199
81jjun)
1-800-SAMTEC-9
HX191
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transistor c2274
Abstract: transistor a984 A984 sc2274 transistor sc2274 2SA984 c2274 2SC2274 C2274 E C2274K
Text: SANYO S EM ICO NDUC TOR CORP 35E D • 7*H707fc, OOtHlfll 1 B9 ^ r -i:? -;:/ * PNP/ NPN Epitaxial Planar \ Silicon Transistors 2003A Low-Frequency Power Amp Applications i 465F Features . High breakdown voltage(Vc e o =50/80V . . High current (Ic=500mA).
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50/80V)
500mA)
2SA984
T-91-20
SC-43
transistor c2274
transistor a984
A984
sc2274
transistor sc2274
c2274
2SC2274
C2274 E
C2274K
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s226
Abstract: DG516
Text: DG516 PAD NO. FU N C TIO N 2 3 4 S ource 6 S ource 7 S ource 8 5 7 8 9 S ource 9 Source 10 VB10 B9 B8 B7 10 11 13 14 B6 B5 B4 15 16 17 B3 B2 B1 19 20 21 V + Substrate Sum JC T 22 23 24 25 26 27 S1 A na lo g G ro un d S2 S3 S4 28 0.070 11.78] S5 DC ELECTRICAL CHARACTERISTICS
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DG516
s226
DG516
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