mss60
Abstract: Metelics MSS60-841-E45 MSS60,444-E45 B10B b20 diode 448-E45 848-B80
Text: MSS60,000 Series Extra High Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS60,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum
|
Original
|
PDF
|
MSS60
MIL-PRF-19500
MIL-PRF-38534
Metelics MSS60-841-E45
MSS60,444-E45
B10B
b20 diode
448-E45
848-B80
|
S14K275
Abstract: S20K680 S20K300 S10K250 S14K300 S14K385 S14K550 S20K550 710 svp 180 16 S20k175
Text: 1954-2012:QuarkCatalogTempNew 9/11/12 8:50 AM Page 1954 OPTOELECTRONICS AUTOMATION & CONTROL POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 Varistors and Surge Voltage Protectors Metal Oxide Varistors Typical Protection Applications: ᭤ Protection of Semiconductors Diodes, Transistors, Thyristors, ICs, Etc.
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: B40C800G thru B380C800G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength • High surge current capability ~ • Typical IR less than 0.1 µA ~ • Solder Dip 260 °C, 40 seconds
|
Original
|
PDF
|
B40C800G
B380C800G
08-Apr-05
|
B125
Abstract: B380 B380C1500G B40C1500G C1500G JESD22-B102D J-STD-002B 600-1000V B80 diode
Text: B40C1500G thru B380C1500G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength • High surge current capability ~ • Typical IR less than 0.1 µA ~ • Solder Dip 260 °C, 40 seconds
|
Original
|
PDF
|
B40C1500G
B380C1500G
2002/95/EC
2002/96/EC
08-Apr-05
B125
B380
B380C1500G
C1500G
JESD22-B102D
J-STD-002B
600-1000V
B80 diode
|
B80 diode
Abstract: No abstract text available
Text: B40C1000G thru B380C1000G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA
|
Original
|
PDF
|
B40C1000G
B380C1000G
2002/95/EC
2002/96/EC
J-STD-002
JESD22-B102
08-Apr-05
B80 diode
|
B250 bridge diode
Abstract: b40 diode B380C1500G-E4/51 C1500G B125 B380 B380C1500G B40C1500G JESD22-B102 J-STD-002
Text: B40C1500G thru B380C1500G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA
|
Original
|
PDF
|
B40C1500G
B380C1500G
2002/95/EC
2002/96/EC
18-Jul-08
B250 bridge diode
b40 diode
B380C1500G-E4/51
C1500G
B125
B380
B380C1500G
JESD22-B102
J-STD-002
|
B40C800DM
Abstract: B125 B380C800DM JESD22-B102D J-STD-002B B80 diode B80C800DM
Text: B40C800DM thru B380C800DM Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier FEATURES • UL Recognition, file number E54214 • Ideal for automated placement • High surge current capability • Solder Dip 260 °C, 40 seconds ~ • Component in accordance to RoHS 2002/95/EC
|
Original
|
PDF
|
B40C800DM
B380C800DM
E54214
2002/95/EC
2002/96/EC
08-Apr-05
B125
B380C800DM
JESD22-B102D
J-STD-002B
B80 diode
B80C800DM
|
B125
Abstract: B380 B380C1000G B40C1000G JESD22-B102D J-STD-002B B80 diode
Text: B40C1000G thru B380C1000G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength • High surge current capability ~ • Typical IR less than 0.1 µA ~ • Solder Dip 260 °C, 40 seconds
|
Original
|
PDF
|
B40C1000G
B380C1000G
2002/95/EC
2002/96/EC
94Ved
08-Apr-05
B125
B380
B380C1000G
JESD22-B102D
J-STD-002B
B80 diode
|
Untitled
Abstract: No abstract text available
Text: B40C800DM thru B380C800DM Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier FEATURES • UL recognition, file number E54214 • Ideal for automated placement • High surge current capability • Solder dip 260 °C, 40 s ~ ~ • Component in accordance to RoHS 2002/95/EC
|
Original
|
PDF
|
B40C800DM
B380C800DM
E54214
2002/95/EC
2002/96/EC
08-Apr-05
|
B80 diode
Abstract: No abstract text available
Text: B40C800G thru B380C800G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA
|
Original
|
PDF
|
B40C800G
B380C800G
2002/95/EC
2002/96/EC
J-STD-002
JESD22-B102
08-Apr-05
B80 diode
|
Untitled
Abstract: No abstract text available
Text: B40C1500G thru B380C1500G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA
|
Original
|
PDF
|
B40C1500G
B380C1500G
2002/95/EC
2002/96/EC
J-STD-002
JESD22-B102
08-Apr-05
|
B125
Abstract: B380 B380C800G B40C800G JESD22-B102 J-STD-002 B125 bridge diode b40 diode B40 bridge diode
Text: B40C800G thru B380C800G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA
|
Original
|
PDF
|
B40C800G
B380C800G
2002/95/EC
2002/96/EC
18-Jul-08
B125
B380
B380C800G
JESD22-B102
J-STD-002
B125 bridge diode
b40 diode
B40 bridge diode
|
B40C800DM
Abstract: B80C800DM
Text: B40C800DM thru B380C800DM Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier FEATURES • UL recognition, file number E54214 • Ideal for automated placement • High surge current capability • Solder dip 260 °C, 40 s ~ ~ • Component in accordance to RoHS 2002/95/EC
|
Original
|
PDF
|
B40C800DM
B380C800DM
E54214
2002/95/EC
2002/96/EC
08-Apr-05
B80C800DM
|
B80 c1500 bridge rectifier
Abstract: c1500 rectifier B80 c1500 rectifier Bridge Rectifier C800 B80 smd diode 206 3N257 DF08S SMD diode bridge B250 Bridge Rectifiers smd rectifier bridge W06M DF06S 214 H
Text: GENL INSTR/ POWER 5SE D • T -9 /-& 0 3fl1D137 DD03333 3 ■ Single Phase Bridge Rectifiers 0.9 PKG T YP E 1.0 OFM D FH DFS KBPM WM VRRM vol(s 50 B40 C800DM B40 C800 EDF1AM DF005M ff DF005S 3N246 B40 C1000 in B80 C800DM B80 C800 EDF1BM* DF01M ff DF01S 3N247
|
OCR Scan
|
PDF
|
3fl1D137
DD03333
C800DM
C800DM
DF005M
DF01M
DF02M
0F04M
B80 c1500 bridge rectifier
c1500 rectifier
B80 c1500 rectifier
Bridge Rectifier C800
B80 smd diode
206 3N257
DF08S SMD diode bridge
B250 Bridge Rectifiers smd
rectifier bridge W06M
DF06S 214 H
|
|
|
Untitled
Abstract: No abstract text available
Text: STU10NB80 N - CHANNEL 800V - 0.65ft - 10A - Max220 _PowerMESH MOSFET PRELIMINARY DATA TYPE S TU 10N B80 • . . . . V dss R dS oii Id 800 V < 0.8 Q. 10 A TYPICAL R D S (on) = 0.65 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
|
OCR Scan
|
PDF
|
STU10NB80
Max220
Max220
P011R
|
STP4NB80
Abstract: No abstract text available
Text: STP4NB80 STP4NB80FP N - CHANNEL 800V - 3 iî - 4A - TO -220/T0220FP PowerMESH MOSFET TYPE V S TP4N B80 STP 4N B80FP • . . . . dss 800 V 800 V R D S o n Id 3.3 Q. 3.3 n 4 A 4 A TYPICAL RDS(on) = 3 £1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
|
OCR Scan
|
PDF
|
STP4NB80
STP4NB80FP
-220/T0220FP
B80FP
STP4NB80/FP
O-22QFP
STP4NB80
|
Untitled
Abstract: No abstract text available
Text: STB5NB80 N - CHANNEL 800V - 1 ,8H - 5A - D^PAK PowerMESH MOSFET TYPE S TB5N B80 • . . . . . V d ss R d S o ii Id 800 V < 2.2 Q. 5 A TYPICAL RDS(on) = 1 -8 £1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
|
OCR Scan
|
PDF
|
STB5NB80
O-263
|
Untitled
Abstract: No abstract text available
Text: STB4NB80 N - CHANNEL 800V - 3G - 4A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STB 4N B80 S TB 4N B80FP • . . . . 800 V 800 V RDS on 3.3 3.3 a a Id 4 A 4 A TYPICAL RDS(on) = 3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
|
OCR Scan
|
PDF
|
STB4NB80
O-220/TO-220FP
B80FP
O-262
|
Untitled
Abstract: No abstract text available
Text: STP3NB80 STP3NB80FP N - CHANNEL 800V - 4.6Î2 - 2.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE S TP3N B80 STP3N B80FP • . . . . V dss RDS on Id 800 V 800 V < 6.5 Q. < 6.5 Q. 2.6 A 2.6 A(ÙÙ) TYPICAL R D S (on) = 4.6 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
|
OCR Scan
|
PDF
|
STP3NB80
STP3NB80FP
O-220/TO-220FP
B80FP
STP3NB80/FP
O-22QFP
|
29LV016
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 16M 2M x 8 BIT MBM 29LV 016T-80-90 i 2/M BM 29LV 01 6B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
|
OCR Scan
|
PDF
|
40-pin
F9811
29LV016
|
VTE3175L
Abstract: VTE3176L
Text: SbE D m 3030bG^ 0DD1EE1 GaAIAs Infrared Emitting Diodes VTE3175L, 3176L Coax Package w/ Cathode Lead — 880 nm 8. E G bb^ H V C T _ G VACTEC T ~ 4 \ “ J3 PACKAGE DIMENSIONS inch mm DESCRIPTION CASES COAX HERMETIC (WITH CASE LEAD) CHIP SIZE: .011 ’ *.011"
|
OCR Scan
|
PDF
|
3030bG^
VTE3175L,
3176L
VTT312xE
VTE3175L
VTE3176L
VTE3175L
VTE3176L
|
Untitled
Abstract: No abstract text available
Text: V SbE 3a3übOS 000122G GaAIAs Infrared Emitting Diodes VTE1261W, 1262W T-1 3/4 Plastic Package - 880 nm E G & G 7 22 H I V C T T -m VACTE C -i3 PACKAGE DIMENSIONS inch mm 1.00 ( 2 5 .4 ) .2 2 0 ( 5 .5 9 ) •OSO ( 1 .2 7 ) .2 6 (6 .6 ) .0 9 (2 .3 ) .0 3 0 ( 0 .7 6 ) "
|
OCR Scan
|
PDF
|
000122G
VTE1261W,
VTE1261W
VTE1262W
|
10SP005
Abstract: bridge B250 C5000 B125 bridge diode "Bridge Rectifiers" b380 b40 bridge rectifier B250 Bridge Rectifiers KBL08 diode bridge B250 bridge diode B80 diode zener diode cross reference
Text: GENL INSTR/ POWER 25E D • 36=10137 DD0333S 7 ■ SIN G LE PHASE BR ID G E R E CT IFIERS continued 3.0 IMA) PGK TYPE KBPC1 VRRM (volts) f 4.0 6.0 5.0 BC KBU KBPC6 50 KBPC1005 B40 C3700/2200 KBL005 ff KBU4A RKBU4A B40 C5000/3300 KBU 6A# KBPC6005 RKBPC6005
|
OCR Scan
|
PDF
|
G003335
T-9/-40
KBPC1005
C3700/2200
KBL005
C5000/3300
KBPC6005
RKBPC6005
KBPC101
10SP005
bridge B250 C5000
B125 bridge diode
"Bridge Rectifiers" b380
b40 bridge rectifier
B250 Bridge Rectifiers
KBL08 diode bridge
B250 bridge diode
B80 diode
zener diode cross reference
|
VTE1261W
Abstract: VTE1262W
Text: 5bE D 3030b[n Q001220 GaAIAs Infrared Emitting Diodes 752 • VCT VTE1261W , 1262W T-1 3/4 Plastic Package — 880 nm T - M I -I3 E G & G VACTEC PACKAGE DIMENSIONS inch mm ■OSO ( 1 . 2 7 ) 1 .0 0 ( 2 5 . 4 ) .2 4 0 ( 6 .J 0 ) M INIM UM .2 2 0 ( 5 .5 9 )
|
OCR Scan
|
PDF
|
3030b
Q001220
VTE1261W,
CASE26W
VTE1261W
VTE1262W
VTE1262W
|
