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fet dual gate sot143 Abstract: SGM2014M Text: SGM2014M SONY, GaAs N-channel Dual Gate MES FET_ hor the availability of this product, please contact the sales officir] Description Package Outline Unit : mm The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is	OCR Scan	PDF	SGM2014M SGM2014M 900MHz Ga-18dB OT-143 -64l0Â fet dual gate sot143
900mhz frequency generator Abstract: BV 9y transistor VHF Transceiver IC NE5200D rf transmitter receiver 900Mhz A5200 NE5200 SA5200D RF Radio frequency IC, 8pin 900M Wideband Amplifier Text: Product Specification Philips Sem iconductors NE/SA5200 RF dual gain-stage DESCRIPTION FEATURES The NE/SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for	OCR Scan	PDF	NE5200/SA5200 1200MHz NE/SA5200 95fiA 900MHzut 711005b 10MHz -26dBm, 900mhz frequency generator BV 9y transistor VHF Transceiver IC NE5200D rf transmitter receiver 900Mhz A5200 NE5200 SA5200D RF Radio frequency IC, 8pin 900M Wideband Amplifier
Sony 104A Abstract: No abstract text available Text: SGM2014M] SONY. GaAs N-channel Dual Gate MES FET Description Package Outline The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable lor a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.	OCR Scan	PDF	SGM2014M] SGM2014M 900MHz at900MHz OT-143 M-254 Sony 104A
IE 500 mixer Abstract: IS-54 Text: W A« HFA3600 December 1996 Low-Noise Amplifier/Mixer Description Features The HFA3600 is a silicon Low-Noise Amplifier with high per formance characteristics allowing the design of very sensi tive, wide dynamic-range 900MHz receivers with minimal	OCR Scan	PDF	HFA3600 900MHz HFA3600 900MHz at900MHz 1000iJ FA3600IB 3600IB IE 500 mixer IS-54