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    AN4005 Search Results

    AN4005 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AN4005 Freescale Semiconductor Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package Original PDF
    AN4005 Motorola Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package Original PDF

    AN4005 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fluorescent lamp driver 4W T5

    Abstract: single phase inverter design with irf830 for low 220V ac to 9V dc converter circuit 110v dc input electronic ballast 180k-J transistor Electronic ballast t5 FLR32 INR14 SYLVANIA TRANSFORMER EI2820
    Text: November 2,1999 AN4005 The New Generation Electronic Ballast Dae Bong, Kim Introduction With a continuous growing by the year, electronic lamp ballasts are widely spread over the world. Even if the light out of the fluorescent tube has a discontinuous spectrum, the higher efficiency


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    PDF AN4005 fluorescent lamp driver 4W T5 single phase inverter design with irf830 for low 220V ac to 9V dc converter circuit 110v dc input electronic ballast 180k-J transistor Electronic ballast t5 FLR32 INR14 SYLVANIA TRANSFORMER EI2820

    AN4005

    Abstract: MRF1507 EB209
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN4005/D AN4005 Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package Prepared by: Jeanne Pavio and Mike McCloskey Motorola SPS Communications Technology Center


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    PDF AN4005/D AN4005 AN4005 MRF1507 EB209

    MRF1507

    Abstract: thermal analysis pld 1.5 "thermal via" AN4005 EB209
    Text: MOTOROLA Order this document by AN4005/D SEMICONDUCTOR APPLICATION NOTE AN4005 Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package Prepared by: Jeanne Pavio and Mike McCloskey Motorola SPS Communications Technology Center


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    PDF AN4005/D AN4005 MRF1507 thermal analysis pld 1.5 "thermal via" AN4005 EB209

    A05T

    Abstract: AN211A AN215A AN721 MRF1550FT1 MRF1550T1 VK200
    Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices


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    PDF MRF1550T1/D MRF1550T1 MRF1550FT1 A05T AN211A AN215A AN721 MRF1550FT1 VK200

    MRF1513 equivalent

    Abstract: 2743021446 MRF1513 AN721 MRF1513T1 J524 AN211A AN215A Transistor J438 J182 transistor
    Text: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


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    PDF MRF1513/D MRF1513T1 MRF1513T1 MRF1513 equivalent 2743021446 MRF1513 AN721 J524 AN211A AN215A Transistor J438 J182 transistor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 7, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device


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    PDF MRF1517N MRF1517NT1

    adc 0304

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF1550T1 Rev. 8, 3/2005 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 MRF1550T1 MRF1550FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices


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    PDF MRF1550T1 MRF1550NT1 MRF1550FNT1 MRF1550FT1 adc 0304

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF1513 Rev. 7, 5/2006 Replaced by MRF1513NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


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    PDF MRF1513 MRF1513NT1. MRF1513T1

    transistor c36

    Abstract: J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet
    Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1570T1 is designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband


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    PDF MRF1570T1/D MRF1570T1 MRF1570T1/D transistor c36 J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


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    PDF MRF1550T1/D MRF1550T1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


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    PDF MRF1518/D MRF1518T1

    z15 Diode glass

    Abstract: 107 J117 surface mount TRANSISTOR MRF1570FT1 zener diode z7 b2 C35 zener
    Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


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    PDF MRF1570T1/D MRF1570T1 MRF1570FT1 z15 Diode glass 107 J117 surface mount TRANSISTOR zener diode z7 b2 C35 zener

    AN721

    Abstract: J361 AN211A AN215A MRF1518T1 transistor j334 j327 transistor
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial


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    PDF MRF1518/D MRF1518T1 MRF1518T1 AN721 J361 AN211A AN215A transistor j334 j327 transistor

    J-031

    Abstract: AN211A AN215A AN721 MRF1511T1
    Text: MOTOROLA Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


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    PDF MRF1511/D MRF1511T1 MRF1511T1 DEVICEMRF1511/D J-031 AN211A AN215A AN721

    2743021446

    Abstract: j494 AN215A AN721 FM LDMOS freescale transistor A113 AN211A AN4005 EB212 MRF1513N
    Text: Freescale Semiconductor Technical Data Document Number: MRF1513N Rev. 10, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1513NT1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device


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    PDF MRF1513N MRF1513NT1 2743021446 j494 AN215A AN721 FM LDMOS freescale transistor A113 AN211A AN4005 EB212 MRF1513N

    MRF1550F

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices


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    PDF AN215A, MRF1550T1 MRF1550FT1 MRF1550F

    motorola 5118 uhf

    Abstract: motorola 5118 wireless
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices


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    PDF AN215A, MRF1535T1 MRF1535FT1 motorola 5118 uhf motorola 5118 wireless

    C35 zener

    Abstract: z15 Diode glass 125 c35 fet MOSFET c25 / 0
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these


    Original
    PDF AN215A, MRF1570T1 MRF1570FT1 C35 zener z15 Diode glass 125 c35 fet MOSFET c25 / 0

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original
    PDF MRF1517T1 AN215A,

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


    Original
    PDF MRF1518T1 AN215A,

    MRF1550

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


    Original
    PDF MRF1550T1 AN215A, MRF1550

    MHZ50

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device


    Original
    PDF MRF1513 MRF1513NT1 MRF1513T1 MHZ50

    MRF1511

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF1511 Rev. 3, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1511NT1 MRF1511T1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device


    Original
    PDF MRF1511 MRF1511NT1 MRF1511T1

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


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    PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index