4 npn transistor ic 14pin
Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Text: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package
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PA102
PA102B:
14-pin
PA102G:
PA102
4 npn transistor ic 14pin
8 npn transistor ic 14pin
C10535E
UPA102G
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SCA-14
Abstract: 175C NGA-589 sca14
Text: Preliminary Preliminary SCA-14 Product Description Sirenza Microdevices SCA-14 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage
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SCA-14
SCA-14
EDS-101395
175C
NGA-589
sca14
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jrc 78L08
Abstract: RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08
Text: AN10923 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN Rev. 1 — 14 March 2011 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, Power amplifier, W-CDMA, LTE, Base station, BLF6G15L-250PBRN
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AN10923
BLF6G15L-250PBRN
BLF6G15L-250PBRN
jrc 78L08
RESISTOR POTENTIOMETER
GRM32ER71H106KA12L
stripline power combiner splitter
GRM31MR71H105KA88L
grm32er71h106ka
transistor J333
AN10923
GRM32ER71H106KA12
jrc78L08
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2SC2351
Abstract: marking R2
Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. @ f = 1.0 GHz • MAG 14 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS Units: mm +0.1 0.4 −0.05 2.8±0.2 +0.1 1.5
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2SC2351
2SC2351
marking R2
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MSC85623
Abstract: No abstract text available
Text: MSC85623 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC85623 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for RF Amplifier and Oscillator Applications up to 3.0 GHz. PACKAGE 230 2L FLG MAXIMUM RATINGS IC 150 mA VCEO 14 V VCB
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MSC85623
MSC85623
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175C
Abstract: NGA-589 SCA-14 SCA-4
Text: Product Description Stanford Microdevices SCA-14 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage
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SCA-14
SCA-14
NGA-589
EDS-101395
175C
SCA-4
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2SC4536
Abstract: No abstract text available
Text: Preliminary Data Sheet 2SC5337 R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise
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2SC5337
2SC4536
R09DS0047EJ0300
2SC5337
2SC5337-T1
2SC5337-AZ
2SC5337-T1-AZ
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1800 ldmos
Abstract: electrolytic capacitor 470 P-237 MAPLST1820-030CF component of 30w amplifier
Text: RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 30W, 26V 5/14/04 MAPLST1820-030CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier
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MAPLST1820-030CF
1805-1880MHz
1930-1990MHz
1900MHz)
P-237
1800 ldmos
electrolytic capacitor 470
P-237
MAPLST1820-030CF
component of 30w amplifier
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transistor marking M04 GHZ
Abstract: No abstract text available
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3508M04
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
NE3508M04-T2B
PG10586EJ02V0DS
transistor marking M04 GHZ
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transistor marking v79 ghz
Abstract: NE3508M04-A marking v79 ne3508m04 NE3508M04-T2-A HS350 NE3508M04-T2
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3508M04
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
transistor marking v79 ghz
NE3508M04-A
marking v79
ne3508m04
NE3508M04-T2-A
HS350
NE3508M04-T2
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transistor s2p
Abstract: 2SC4536 2SB804-AUT1-AZ
Text: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5337 Data Sheet NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
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2SC5337
R09DS0047EJ0300
2SC4536
2SC5337
2SC5337-T1
2SC5337-AZ
2SC5337-T1-AZ
transistor s2p
2SB804-AUT1-AZ
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NE3508M04-T2-A
Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3508M04
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
NE3508M04-T2-A
HS350
NE3508M04
NE3508M04-A
NE3508M04-T2
marking v79
ne3508
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NEC Ga FET marking L
Abstract: NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3508M04
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
NE3508M04-T2B
NE3508M04-T2B-A
NEC Ga FET marking L
NE3508M04-T2B-A
nec microwave
NE3508M04-A
NE3508M04-T2-A
HS350
NE3508M04
NE3508M04-T2
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Untitled
Abstract: No abstract text available
Text: IO Stanford Microdevices Product Description SCA-14 Stanford M icrodevices’ SCA-14 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor M MIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases
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SCA-14
SCA-14
100mA
36dBm.
100mW
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Untitled
Abstract: No abstract text available
Text: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE CONNECTION DIAGRAM (Topview) UPA102G 14 LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE
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UPA102G
UPA102G
OUTUNEG14
UPA102G-E1
2500/REEL
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78s12
Abstract: No abstract text available
Text: S tati ford M i cru d ev ices Product Description SCA-14 Stanford M icrodevices’ SC A -14 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perform ance up to 3 GHz. The heterojunction increases
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36dBm.
100mW
78s12
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Transistor Array differential amplifier
Abstract: transistor array high speed G141C UPA102G
Text: UPA102B UPA102G TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hre LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded 14-pin ceramic package
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UPA102B
UPA102G
UPA102B:
14-pin
UPA102G:
UPA102B
UPA102B/G
Transistor Array differential amplifier
transistor array high speed
G141C
UPA102G
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF • MAG 1.5 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS 14 dB TYP. @ f = 1.0 GHz U nits: m m 2 .8 ± 0.2 1.5 "3- Ò ABSOLUTE MAXIMUM RATINGS (T a = 25 °C)
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2SC2351
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Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • NF 1.5 dB TY P. ' f = 1 .0 G H z M AG 14 dB TV P. • f = 1.0 GHz in millimeters ABSOLUTE M AXIM UM RATINGS { T ,« 2 5 ° C
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2SC2351
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UPA102G
Abstract: transistor PACKAGE PIN DIAGRAM
Text: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM • TW O BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE LINEARITY • TW O PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded 14-pin ceram ic package
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UPA102B
UPA102G
UPA102B:
14-pin
UPA102G:
UPA102B
UPA102B/G
UPA102G
transistor PACKAGE PIN DIAGRAM
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SCA-14
Abstract: sca14
Text: E j Stanford Microdevices Product Description IS C A -1 4 Stanford M icrodevices’ SCA-14 is a high perform ance Galliur Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases
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SCA-14
100mA
36dBm.
100mW
sca14
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nec transistor
Abstract: No abstract text available
Text: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 G H z Single Transistors • OUTSTANDING hFE LINEARITY UPA102G CONNECTION DIAGRAM (Top view ) UPA102G 14 • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE
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UPA102G
UPA102G
hM27S25
UPA102G-E1
2500/REEL
nec transistor
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PR240
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. f = 1.0 G H z * M AG 14 dB TYP. f = 1.0 G H z PACKAGE DIMENSIONS Units: mm 2 .8± 0.2 1.5 .0.65-0-5 ABSOLUTE MAXIMUM RATINGS (T a = 25 °C)
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2SC2351
PR240
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HN3C14F
Abstract: No abstract text available
Text: HN3C14F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 14 F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO v EBO ic Ib MARKING
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HN3C14F
HN3C14F
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