Untitled
Abstract: No abstract text available
Text: CT485B-110V-G-AL, CT485B-220V-G-AL, CT485B-110V-W-AL, CT485B-220V-W-AL High Performance Microprocessor Temperature and Humidity Recorder Operator’s Manual NEWPORT Electronics, Inc. Warranty/Disclaimer NEWPORT Electronics, Inc. warrants this unit to be free of defects in materials and workmanship for a period of one
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CT485B-110V-G-AL,
CT485B-220V-G-AL,
CT485B-110V-W-AL,
CT485B-220V-W-AL
imme420
D-75392
M2309/N/0995
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IEC 60947-4-1 for ABB
Abstract: ABB Magnetic contactor IEC 60947-4-1 50/60HZ abb A 16-30-10 CAL 5-11 ABB abb al 26-30-01 TRANSISTOR R1002 transistor r1010 R1004 transistor ABB AL9 entrelec diode
Text: Main Catalogue Low Consumption d.c. Operated Contactors AL Contactors NL Contactor Relays 80 1SBC141135C0301 ABB Entrelec AL 9 . AL 40 Contactors NL. Contactor Relays d.c. Operated Contents Ordering details 3-pole Contactors – AL. screw and spring terminals . 5
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1SBC141135C0301
1SBC101139C0201
F-69685
C0201
IEC 60947-4-1 for ABB
ABB Magnetic contactor IEC 60947-4-1 50/60HZ
abb A 16-30-10
CAL 5-11 ABB
abb al 26-30-01
TRANSISTOR R1002
transistor r1010
R1004 transistor
ABB AL9
entrelec diode
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SS34 DO-214AC
Abstract: No abstract text available
Text: Chip Schottky Barrier Rectifier FM320-AL THRU FM3100-AL Formosa MS List List. 1 Package outline. 2
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FM320-AL
FM3100-AL
125OC
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
SS34 DO-214AC
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Untitled
Abstract: No abstract text available
Text: TCT Series AL Case Tantalum capacitors Chip tantalum capacitors TCT Series AL Case zExternal dimensions Unit : mm zFeatures (AL) 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. Anode mark
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M705
Abstract: No abstract text available
Text: Chip tantalum capacitors TCT Series AL Case zFeatures AL 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. zDimensions (Unit : mm) Anode mark (Unit : mm) + Dimensions AL case L 3.2 +
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AL68
Abstract: M705 al 220 22 J.63
Text: Chip tantalum capacitors TCT Series AL Case zFeatures AL 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. zDimensions (Unit : mm) Anode mark (Unit : mm) + Dimensions AL case L 3.2 +
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R0039A
AL68
M705
al 220
22 J.63
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476M
Abstract: M705
Text: TCT Series AL Case Tantalum capacitors Chip tantalum capacitors TCT Series AL Case zDimensions Unit : mm zFeatures (AL) 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. Anode mark (Unit : mm)
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Untitled
Abstract: No abstract text available
Text: TCT Series AL Case Tantalum capacitors Chip tantalum capacitors TCT Series AL Case zDimensions Unit : mm zFeatures (AL) 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. Anode mark (Unit : mm)
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Untitled
Abstract: No abstract text available
Text: TCT Series AL Case Tantalum capacitors Chip tantalum capacitors TCT Series AL Case zDimensions Unit : mm zFeatures (AL) 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. Anode mark (Unit : mm)
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0E107
Abstract: No abstract text available
Text: TCTO Series AL Case Tantalum capacitors Conductive polymer chip tantalum capacitors TCTO Series AL Case zFeatures AL 1) Conductive polymer used for the cathode material. 2) Ultra low ESR 3) Small package, but big capacitance 4) Screening by thermal shock
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Untitled
Abstract: No abstract text available
Text: TCT Series AL Case Tantalum capacitors Chip tantalum capacitors TCT Series AL Case zDimensions Unit : mm zFeatures (AL) 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. Anode mark (Unit : mm)
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476M
Abstract: M705
Text: TCT Series AL Case Tantalum capacitors Chip tantalum capacitors TCT Series AL Case zDimensions Unit : mm zFeatures (AL) 1) Vital for all hybrid integrated circuits board application. 2) Wide capacitance range. 3) Screening by thermal shock. Anode mark (Unit : mm)
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M705
Abstract: No abstract text available
Text: TCTO Series AL Case Tantalum capacitors Under development Conductive polymer chip tantalum capacitors TCTO Series AL Case zFeatures AL 1) Conductive polymer used for the cathode material. 2) Ultra low ESR 3) Small package, but big capacitance 4) Screening by thermal shock
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Untitled
Abstract: No abstract text available
Text: TWIST WAVEGUIDE 1.70GHz – 110GHz 430TWISTW-800 Freq. Range GHz 1.70 - 2.60 340TWISTW-500 2.20 - 3.30 WR340 1.10 500 FDP26/ FDM26 Al 284TWISTW-300 2.60 - 3.95 WR284 1.10 300 FDP32/ FDM32 Al/Cu 229TWISTW-250 3.30 - 4.90 WR229 1.10 250 FDP40/ FDM40 Al/Cu
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70GHz
110GHz
430TWISTW-800
340TWISTW-500
WR340
FDP26/
FDM26
284TWISTW-300
WR284
FDP32/
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gunn diode x band series 45200
Abstract: Al67 Gunn Diode x-band varactor diode 10 GHz gunn diode AL3501 406X1 AL-35A10 Gunn Diode e band AL-62101
Text: AL-3 5100 S E R IE S 30 V o lt D K x rt* T h e AL-35100 series o f tun in g v a ra cto r diodes have been desig ned fo r tuning G u n n Type No. AL-35136 AL-35137 AL-35138 AL-35130 AL-35140 AL-35141 AL-35142 AL-36143 AL-35144 AL-35145 AL-35146 Total CapsÜtanca
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AL-35100
AL-38200
AL-45400
AL-3S136
AL-35137
AL-35136
AL-35130
AL-3S140
AL-35141
gunn diode x band series 45200
Al67
Gunn Diode
x-band varactor diode
10 GHz gunn diode
AL3501
406X1
AL-35A10
Gunn Diode e band
AL-62101
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Untitled
Abstract: No abstract text available
Text: GM71C4170A/AL GM71CS4170A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS X16BIT CMOS DYNAMIC RAM D escrip tio n F ea tu res The GM71C4170A/AL is the new generation dynamic RAM organized 262,144x16 Bit. GM71C4170A/AL has realized higher density, higher performance and various functions by
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GM71C4170A/AL
GM71CS4170A/AL
X16BIT
GM71C4170A/AL
144x16
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DSS300A13R
Abstract: DSS300A13 DSS300A15R DSS300A1S DSS300A8 E10DS1 E10DS2 E10DS4 ha 1303
Text: - AË J£ m is fa ^ & M 1.j 57- SI # ft & tt s S Vr s m Vrr m Vr IFM Tfc# (V (V) (V) (A) (°C) io. If * 1FSM Tàfèft VFtnax (A) (°C) (°C) B aL B aL B aL B aL B aL 1600 1600 1800 1800 1000 1300 1300 1500 1500 800 300 300 300 300 300 79c 67c 79c 67c 79c
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DSS300A13
DSS300A13R
DSS300A1S
DSS300A15R
DSS300A15ii
DSS300A8
DSS300A88
DSS300A8iiÂ
ffi14
E10DS1
E10DS2
E10DS4
ha 1303
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DSS300A13
Abstract: DSS300A13R DSS300A15R DSS300A1S DSS300A8 E10DS1 E10DS2 E10DS4
Text: - AË J£ m fa ^ is & M 1.j 57- SI # ft & s tt S Vr s m Vr r m Vr IFM Tfc# (V (V) (V) (A) (°C) io. If * (A) (°C) 1FSM Tàfèft VFtnax (A) (°C) DSS 300A 13 DSS300A13R DSS300A15 DSS300A15R DSS3 0 0 A 8 B aL B aL B aL B aL B aL 1600 1600 1800 1800 1000 1300
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DSS300A13
DSS300A13R
DSS300A1S
DSS300A15R
DSS300A15ii
DSS300A8
DSS300A88
DSS300A8iiÂ
ffi14
E10DS1
E10DS2
E10DS4
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ZN 3055 transistor
Abstract: Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622
Text: ASSMANN Technical Data & Abbreviations Electronic C om ponen ts Al Surface nature AI203 Aluminiumoxyd Al Mg Si 0,5 Special aluminium alloy {extruded Al 99,5 Special aluminium alloy band) GD-AI Si 12 Special aluminium alloy (Die-cast) BeO Berylliumoxyd K
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AI203
OT-32,
O-126)
O-220
O-220,
ZN 3055 transistor
Transistor w1l
7805 TO-220
V7233
5241E
V7331
V5237B
V-5240-k
mk 5373
V7622
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014113
Abstract: No abstract text available
Text: HM51W4800A/AL Series Preliminary 524,288-Word x 8-Bit Dynamic Random Access Memory • DESCRIPTION ■ ORDERING INFORMATION The Hitachi HM51W4800A/AL are CMOS dynamic RAM organized as 524,288-word x 8-bit. HM51W4800A/AL have realized higher density, higher performance and various
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HM51W4800A/AL
288-Word
28-pin
HM51W4800ATT-7
HM51W4800ATT-8
014113
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Untitled
Abstract: No abstract text available
Text: HM51W4800A/AL Series Preliminary 524,288-Word x 8-Bit Dynamic Random Access Memory • DESCRIPTION ■ ORDERING INFORMATION The Hitachi HM51W4800A/AL are CMOS dynamic RAM organized as 524,268-word x 8-bit. HM51W4800A/AL have realized higher density, higher performance and various
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HM51W4800A/AL
288-Word
268-word
HM51W4800A/AL
28-pin
ns/80
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s417t
Abstract: ALT70 ALZ-70 88882 ALZ10 CG1700
Text: GM71C4170A/AL GM71CS4170A/AL LG Semicon Co.,Ltd. 262,144 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71C4170 AML is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4170A/AL has realized higher density, higher performance and various functions by utilizing
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GM71C4170A/AL
GM71CS4170A/AL
GM71C4170
GM71CS4170A/AL
s417t
ALT70
ALZ-70
88882
ALZ10
CG1700
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gm71c4270a
Abstract: No abstract text available
Text: GM71C4270A/AL GM71CS4270A/AL LG Semicon Co.,Ltd. 262,144 W ORDS x 16 BIT CMOS DYNAM IC RAM Description Features The GM 71C4270A/AI. is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4270A/AL has realized higher density, higher performance and various functions by utilizing
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GM71C4270A/AL
GM71CS4270A/AL
71C4270A/AI.
71C4270A/AL
GM71CS4270A/AL
gm71c4270a
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DSS300A13
Abstract: DSS300A13R DSS300A15R DSS300A1S DSS300A8 E10DS1 E10DS2 E10DS4
Text: - AË J£ m fa ^ is & M 1.j 57- SI # ft & tt s S Vr s m Vr r m Vr IF M Tfc# (V (V) (V) (A) (°C) io. If * 1F S M Tàfèft VFtnax (A) (°C) Ißtnax * m © œ tí m B (A) (°C) D S S 3 0 0 A 13 DSS300A13R DSS300A15 DSS300A15R DSS300A8 B aL B aL B aL B aL
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DSS300A13
DSS300A13R
DSS300A1S
DSS300A15R
DSS300A15ii
DSS300A8
DSS300A88
DSS300A8iiÂ
ffi14
E10DS1
E10DS2
E10DS4
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