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Advanced Semiconductor Inc AGR19060EF RF MOSFET Transistors 1.93-1.99GHz 12Watt Gain 15.5dB
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Mouser Electronics	AGR19060EF					1 - 10 $71.8 100 $67.21 1000 $67.21 10000 $67.21	Get Quote

AGR19060E Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR19060E		Agere Systems	60 W, 1930 MHz-1990MHz, PCS LDMOS RF POWER Transistor		Original	PDF
AGR19060E		TriQuint Semiconductor	60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor		Original	PDF
AGR19060EF		Agere Systems	MOSFET		Original	PDF
AGR19060EF		Agere Systems	60 W, 1930 MHz - 1990 MHz, PCS LDMOS RF Power Transistor		Original	PDF
AGR19060EU		Agere Systems	MOSFET		Original	PDF

AGR19060E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor 7350 Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496 Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496
Untitled Abstract: No abstract text available Text: Preliminary Product Brief April 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal	Original	PDF	AGR19060E Hz--1990 AGR19060EU AGR19060EF PB03-093RFPP PB03-067RFPP)
Transistor J182 Abstract: No abstract text available Text: Preliminary Data Sheet July 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19060E Hz--1990 AGR19060EU AGR19060EF DS01-216RFPP Transistor J182
transistor 7350 Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L Text: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19060E Hz--1990 AGR19060E DS04-078RFPP DS01-216RFPP) transistor 7350 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A transistor z14 L
c101 TRANSISTOR Abstract: transistor A114 AGR19060E transistor C101 AGR19060EF AGR19060EU JESD22-A114 Text: Preliminary Product Brief May 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19060E Hz--1990 AGR19060E AGR19060EU AGR19060EF PB03-112RFPP PB03-093RFPP) c101 TRANSISTOR transistor A114 transistor C101 AGR19060EF AGR19060EU JESD22-A114
transistor 7350 A Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor 7350 Text: AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19060E Hz--1990 AGR19060E AGR19060XU AGR19060EF AGR19060XE 12-digit transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A transistor 7350
TGA2517 Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125 Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint	Original	PDF	cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
TGA2517 Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4	Original	PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	PDF	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM