Untitled
Abstract: No abstract text available
Text: AP42T03GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Low Gate Charge Fast Switching Characteristic ID G 30V 22m 30A S Description The Advanced Advanced Power Power
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AP42T03GP
O-220
O-220
42T03GP
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4002T
Abstract: No abstract text available
Text: AP4002T RoHS-compliant Product Advanced Power Electronics Corp. 100% Avalanche Test N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS ON Fast Switching Characteristics Simple Drive Requirement ID G 600V 5 400mA S Description Advanced Power MOSFETs utilized advanced processing techniques to
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AP4002T
400mA
4002T
4002T
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Untitled
Abstract: No abstract text available
Text: AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Fast Switching Characteristics Simple Drive Requirement BVDSS 600V RDS ON 12 ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to
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AP01L60AT
160mA
01L60AT
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AP01L60T
Abstract: No abstract text available
Text: AP01L60T Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to
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AP01L60T
160mA
AP01L60T
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Untitled
Abstract: No abstract text available
Text: AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D Simple Drive Requirement Fast Switching G -30V RDS ON 50m ID - 20A S Description G Advanced Power MOSFETs utilized advanced processing techniques to
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AP9435GH/J
O-252
O-252/TO-251
O-251
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP01L60T RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Fast Switching Characteristics Simple Drive Requirement BVDSS 600V RDS ON 12 ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to
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AP01L60T
160mA
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Untitled
Abstract: No abstract text available
Text: AP2625GY RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D2 D1 -30V RDS ON Low Gate Drive Surface Mount Package BVDSS ID G2 G1 185m - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques
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AP2625GY
OT-26
OT-26
12REF
37REF
90REF
20REF
95REF
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Untitled
Abstract: No abstract text available
Text: AP3403H/J Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS -30V RDS ON 200mΩ ID - 10A G S Description G D Advanced Power MOSFETs utilized advanced processing techniques to
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AP3403H/J
O-252
O-252/TO-251
O-251
100ms
Fig11.
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AP2304AN
Abstract: N-CHANNEL MOSFET 30V 2A SOT-23
Text: AP2304AN Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Small Package Outline BVDSS 30V RDS ON 117mΩ ID ▼ Surface Mount Device 2.5A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques
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AP2304AN
OT-23
OT-23
100ms
AP2304AN
N-CHANNEL MOSFET 30V 2A SOT-23
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AP01L60T
Abstract: No abstract text available
Text: AP01L60T RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to
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AP01L60T
160mA
AP01L60T
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AP9435GH
Abstract: No abstract text available
Text: AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching G BVDSS -30V RDS ON 50mΩ ID - 20A S Description G Advanced Power MOSFETs utilized advanced processing techniques to
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AP9435GH/J
O-252
O-252/TO-251
O-251
100us
100ms
AP9435GH
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AP2623Y
Abstract: No abstract text available
Text: AP2623Y Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low On-resistance ▼ Surface Mount Package -30V RDS ON 170mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 S1 Advanced Power MOSFETs utilized advanced processing techniques
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AP2623Y
OT-26
OT-26
180/W
AP2623Y
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Untitled
Abstract: No abstract text available
Text: AP2322GN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Capable of 1.8V gate drive Simple Drive Requirement RDS ON D ID Surface mount package Description 90m 2.5A S SOT-23 20V D G Advanced Power MOSFETs utilized advanced processing techniques to
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AP2322GN
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: AP2304AGN-HF Halogen-Free Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D RDS ON Small Package Outline ID Surface Mount Device 30V 117m 2.5A S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques
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AP2304AGN-HF
OT-23
OT-23
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AP01L60AT
Abstract: No abstract text available
Text: AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to
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AP01L60AT
160mA
AP01L60AT
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AP01L60AT
Abstract: RoHS-compliant Product Advanced MOSFET BVDSS 01L60
Text: AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to
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AP01L60AT
160mA
01L60AT
AP01L60AT
RoHS-compliant Product Advanced MOSFET BVDSS
01L60
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Untitled
Abstract: No abstract text available
Text: AP2318GEN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Capable of 2.5V Gate Drive D Small Outline Package BVDSS 30V RDS ON 1.5 ID Surface Mount Device 500mA S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to
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AP2318GEN
500mA
OT-23
OT-23
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AP2625Y
Abstract: No abstract text available
Text: AP2625Y Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low On-resistance ▼ Surface Mount Package -30V RDS ON 135mΩ ID G2 G1 BVDSS - 2.3A S2 S1 Description D2 S1 Advanced Power MOSFETs utilized advanced processing techniques
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AP2625Y
OT-26
OT-26
100ms
180/W
AP2625Y
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4002T
Abstract: AP4002T AP4002 RoHS-compliant Product Advanced MOSFET BVDSS
Text: AP4002T RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 5Ω ID G 400mA S Description Advanced Power MOSFETs utilized advanced processing techniques to
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AP4002T
400mA
4002T
4002T
AP4002T
AP4002
RoHS-compliant Product Advanced MOSFET BVDSS
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AP2306N
Abstract: No abstract text available
Text: AP2306N Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D ▼ Surface mount package BVDSS 20V RDS ON 32mΩ ID 5.3A S SOT-23 Description G Advanced Power MOSFETs utilized advanced processing techniques to
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AP2306N
OT-23
OT-23
100ms
AP2306N
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Untitled
Abstract: No abstract text available
Text: AP2623GY RoHS-compliant Product Advanced Power Electronics Corp. DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D2 D1 -30V RDS ON Low On-resistance Surface Mount Package BVDSS ID G2 G1 170m - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques
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AP2623GY
OT-26
OT-26
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9435GH
Abstract: AP9435GH 9435G 9435GJ AP9435 9435 TO252 rthjc 250B1 AP9435G marking code E2 and gate
Text: AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching G BVDSS -30V RDS ON 50mΩ ID - 20A S Description G Advanced Power MOSFETs utilized advanced processing techniques to
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AP9435GH/J
O-252
O-252/TO-251
O-251
O-251
9435GJ
9435GH
AP9435GH
9435G
9435GJ
AP9435
9435
TO252 rthjc
250B1
AP9435G
marking code E2 and gate
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AP9963GP
Abstract: No abstract text available
Text: AP9963GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low Gate Charge ▼ Fast Switching Characteristic G BVDSS 40V RDS ON 4mΩ ID 160A S Description The Advanced Advanced
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AP9963GP
O-220
100us
100ms
AP9963GP
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AP9963GP
Abstract: No abstract text available
Text: AP9963GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low Gate Charge ▼ Fast Switching Characteristic G BVDSS 40V RDS ON 4mΩ ID 160A S Description The Advanced Advanced
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AP9963GP
O-220
100us
100ms
AP9963GP
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