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    ACC 2089 Search Results

    ACC 2089 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    863093CBCLF Amphenol Communications Solutions 863093CBCLF-KIT ACC HOODS 93C 25-37 Visit Amphenol Communications Solutions
    863093CEALF Amphenol Communications Solutions 863093CEALF-DSUB HD ACC ASY 93C 9-15 Visit Amphenol Communications Solutions

    ACC 2089 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Acc 2089

    Abstract: ACC MICRO 2089 acc micro 2168 acc micro 2048 ACC MICRO 2086 ACC Microelectronics Corporation ACC Microelectronics ACC MICRO 2178 acc micro 2016 acc micro 2066
    Text: 2016 ACC MICRO 2016 BUFFER AND MUX LOGIC DATA BOOK MARCH 1997 Revision 2.0 ACC Microelectronics Corporation, 2500 Augustine Drive, Santa Clara, CA 95054 Phone: 408 980-0622 Fax: (408) 980-0626 TM ACC Micro 2016 ACC Microelectronics Corporation 2500 Augustine Drive,


    Original     		PDF

    FPT-48P-M19

    Abstract: FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-3E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE 10/12 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (I) and 48-ball FBGA packages. This device is


    Original     		PDF DS05-20891-3E MBM29DS163TE/BE 48-pin 48-ball MBM29DS163TE/BE FPT-48P-M19 FPT-48P-M20

    FPT-48P-M19

    Abstract: FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-4E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE10 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (1) and 48-ball FBGA packages. This device is


    Original     		PDF DS05-20891-4E MBM29DS163TE/BE10 MBM29DS163TE/BE 48-pin 48-ball F0303 FPT-48P-M19 FPT-48P-M20

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-3E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE 10/12 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (I) and 48-ball FBGA packages. This device is


    Original     		PDF DS05-20891-3E MBM29DS163TE/BE 48-pin 48-ball MBM29DS163TEthird F0203

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-3E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each


    Original     		PDF DS05-20890-3E MBM29PL3200TE70/90 MBM29PL3200BE70/90 MBM29PL3200TE/BE 90-pin 84-ball F0204

    20890

    Abstract: MBM29PL3200BE70 MBM29PL3200BE90 MBM29PL3200TE70 MBM29PL3200TE90
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-3E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each


    Original     		PDF DS05-20890-3E MBM29PL3200TE70/90 MBM29PL3200BE70/90 MBM29PL3200TE/BE 90-pin 84-ball MBM29PL3200TE70 MBM29PL3200BE70 90for F0204 20890 MBM29PL3200BE70 MBM29PL3200BE90 MBM29PL3200TE70 MBM29PL3200TE90

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-2E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits


    Original     		PDF DS05-20890-2E MBM29PL3200TE70/90 MBM29PL3200BE70/90 MBM29PL3200TE/BE 90-pin 84-ball F0110

    29lv320be

    Abstract: 29LV320TE FPT-48P-M19 FPT-48P-M20 MBM29LV320TE 29lv320t
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-1E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words


    Original     		PDF DS05-20894-1E MBM29LV320TE MBM29LV320BE80/90/10 MBM29LV320TE/BE 48-pin 63-ball 29lv320be 29LV320TE FPT-48P-M19 FPT-48P-M20 29lv320t

    29LV320TE

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words


    Original     		PDF DS05-20894-2E MBM29LV320TE MBM29LV320BE80/90/10 MBM29LV320TE/BE 48-pin 63-ball 29LV320TE

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-4E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words


    Original     		PDF DS05-20894-4E MBM29LV320TE MBM29LV320BE80/90/10 MBM29LV320TE/BE 48-pin 63-ball F0305

    20890

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-1E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE/BE 70/90 • DESCRIPTION The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each or 1 M words of 32 bits each. The device is offered in 90-pin SSOP and 84-ball FBGA packages. This device


    Original     		PDF DS05-20890-1E MBM29PL3200TE/BE 90-pin 84-ball MBM29PL3200TE/BE 20890

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-3E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words


    Original     		PDF DS05-20894-3E MBM29LV320TE MBM29LV320BE80/90/10 MBM29LV320TE/BE 48-pin 63-ball F0303

    FPT-48P-M19

    Abstract: FPT-48P-M20 MBM29LV320TE
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words


    Original     		PDF DS05-20894-2E MBM29LV320TE MBM29LV320BE80/90/10 MBM29LV320TE/BE 48-pin 63-ball F0207 FPT-48P-M19 FPT-48P-M20

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-4E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each


    Original     		PDF DS05-20890-4E MBM29PL3200TE70/90 MBM29PL3200BE70/90 MBM29PL3200TE/BE 90-pin 84-ball F0302

    Marking code vacc

    Abstract: FPT-48P-M19 FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in


    Original     		PDF DS05-20892-3E MBM29PDD322TE/BE 32M-bit, 48-pin 63-ball MBM29PDD322TE/BE F0206 Marking code vacc FPT-48P-M19 FPT-48P-M20

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in


    Original     		PDF DS05-20892-1E MBM29PDD322TE/BE 32M-bit, 48-pin 63-ball MBM29PDD322TE/BE

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-2E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in


    Original     		PDF DS05-20892-2E MBM29PDD322TE/BE 32M-bit, 48-pin 63-ball F0203

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in


    Original     		PDF DS05-20892-3E MBM29PDD322TE/BE 32M-bit, 48-pin 63-ball

    SA611

    Abstract: 29DL320
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M


    Original     		PDF DS05-20896-2E MBM29DL320TF/BF MBM29DL320TF/BF SA611 29DL320

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-3E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M


    Original     		PDF DS05-20896-3E MBM29DL320TF/BF

    BGA-48P-M13

    Abstract: FPT-48P-M19 FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20898-1E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL640F 60/70 • DESCRIPTION MBM29DL640F is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (I) and 48-ball FBGA packages. This device is designed to be


    Original     		PDF DS05-20898-1E MBM29DL640F 48-pin 48-ball MBM29DL640F60 MBM29DL640F70 BGA-48P-M13 FPT-48P-M19 FPT-48P-M20

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20898-2E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL640F 60/70 • DESCRIPTION MBM29DL640F is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (I) and 48-ball FBGA packages. This device is designed to be


    Original     		PDF DS05-20898-2E MBM29DL640F 48-pin 48-ball F0206

    Acc 2089

    Abstract: HALT 4-1070 HT83R074 MS-013
    Text: HT83R074 Q-VoiceTM Technical Document • Tools Information · FAQs · Application Note Features · Operating voltage: 2.4V~5.2V · Two 8-bit programmable timer counter with 8-stage prescaler and one time base counter · Up to 1ms 0.5ms instruction cycle with 4MHz (8MHz)


    Original     		PDF HT83R074 20-pin 209mil) 1536K 28-pin 300mil) Acc 2089 HALT 4-1070 HT83R074 MS-013

    Untitled

    Abstract: No abstract text available
    Text: HT83R074 Q-VoiceTM Technical Document • Tools Information · FAQs · Application Note Features · Operating voltage: 2.4V~5.2V · Two 8-bit programmable timer counter with 8-stage prescaler and one time base counter · Up to 1ms 0.5ms instruction cycle with 4MHz (8MHz)


    Original     		PDF HT83R074 20-pin 209mil) 1536K 28-pin 300mil)