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    A7W 20 Search Results

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    Royal Electronic Factory (Thailand) Co Ltd KNPA7WJ0220B00

    Wirewound Resistors - Through Hole KNPA 7W (8.5x30.0) 5% B/B
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    A7W 20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A7W 34

    Abstract: a7w 20 DS146 a7w 9 ds1480 ds1216 ds2503 DS1722 DS1671 AC501
    Text: RMP Process Samples 0.8 µm 0.6 µm Double Poly, Double Metal 0.8 µm Rev DS80CH10 A3 A2 DS21352 A4 A5 Product Rev DS1722 A2 DS1722 A4 DS1775 A1 DS1775 A2 DS1820 B5 DS1820 B5 DS1820 B6 DS1822 B6 DS1822 B6-PA DS1847 B1 DS1848 B1 DS21352 A3 DS21352 A4 DS21354


    Original     		PDF DS80CH10 DS80CH10 DS1775 DS21352 DS1722 DS1775 DS1820 DS1847 DS2148 A7W 34 a7w 20 DS146 a7w 9 ds1480 ds1216 ds2503 DS1671 AC501

    A7W 85

    Abstract: diodes a7w a7w diode A7W smd A7W 75
    Text: Diodes SMD Type High-Speed Double Diode BAV99 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Repetitive peak forward current: max.450 mA. 1 0.55 High switching sped: max.4 ns. +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package. 2 +0.1 0.95-0.1 +0.1


    Original     		PDF BAV99 OT-23 A7W 85 diodes a7w a7w diode A7W smd A7W 75

    a7w 9

    Abstract: A7w 12 a7w 20 A7w 50 DS2503 DS-1100 DS29020 A6W 08 DS1624 DS1868
    Text: RMP Process Samples 0.8 µm 0.6 µm Double Poly, Double Metal 0.8 µm Rev DS80CH10 A3 A2 DS21352 A4 A5 Product Rev DS1722 A2 DS1775 A1 DS1775 A2 DS1820 B5 DS1820 B5 DS1820 B6 DS21352 A3 DS21352 A4 DS21354 A1 DS21354 A4 DS2148 A2-3 DS2148 A2-5 DS21552 A3 DS21552


    Original     		PDF DS80CH10 DS80CH10 DS1775 DS21352 DS1722 DS1820 DS21354 DS21552 DS21554 a7w 9 A7w 12 a7w 20 A7w 50 DS2503 DS-1100 DS29020 A6W 08 DS1624 DS1868

    A7W 85

    Abstract: BAV99 A7w
    Text: Product specification BAV99 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Repetitive peak forward current: max.450 mA. 1 0.55 High switching sped: max.4 ns. +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05


    Original     		PDF BAV99 OT-23 A7W 85 BAV99 A7w

    A6W 37

    Abstract: A7W 14 a7w 16 a7w 37 A7W 34 A7W 29 ds1480 a4w 29 DS1868 DS1722
    Text: RMP Process Samples 0.6 µm Standard Process Monitor Device s DS21Q43 A3-A Friday, December 28, 2001 Product DS2401 C2 Rev DS12885 B1 DS12885 B1-C DS12887 A2-C DS1425 F1 DS1425 F2 DS1501 A4-Y DS1501 A6-W DS1501 A6-Y DS1511 A6-W DS1511 DS1553 A6-Y A1 DS1543


    Original     		PDF DS21Q43 DS2401 DS12885 DS1425 DS1501 DS1511 DS1553 DS1554 DS1556 A6W 37 A7W 14 a7w 16 a7w 37 A7W 34 A7W 29 ds1480 a4w 29 DS1868 DS1722

    a7w+18

    Abstract: No abstract text available
    Text: 4 3 A. 3 T ion and b dtfnrad an ’afiarttM X m S m I1* i te granted ta n M a w 4 _ !_ 2 R E V IS IO N S SVM DATE DESORPTION ECN A APPROVED 09/ 3 1 /0 7 D -SU B TECHNICAL DATA SHELL : Steel 2 .5 u m 1 0 0 u ” min tin over 1.2 5 um (50 u”) min nickel


    OCR Scan     		PDF 717TW L717TW a7w+18

    Untitled

    Abstract: No abstract text available
    Text: i to Vw m h ^ i o f Am ptam l Ovpowlto i oad l i i _jondfaon M k l i aot fa to liilm l, raproduoto r to p v t fa r manufaoturo o r M h to a im o m r faoa . m rt A ta t no rig ht l i gnnfad Conoratfai o tto * to odor eoncori cr fa im my Ito w t o fa too d


    OCR Scan     		PDF 717TW L717TW

    Untitled

    Abstract: No abstract text available
    Text: 4 3 i t K V 'n r t 'io ir 1dMaiNdfraeradMC manufooture or Hh tor h n o n r Ita • prior eencort, I m n right to grant* 39.00 6.86 (TOLERANCE + /- 0 .0 3 Customer drawing 4 3 j 2 _ 1_ REVISIONS SYM DESCRIPTION ECN DATE D -S U B T E C H N IC A L D A T A


    OCR Scan     		PDF 1E/SI/09 L177TW

    a7w 80

    Abstract: W2416-70L a7w 16 W2416 W2416-10L W2416K-70 A7W 13 a7w 35 a7w 60 A7W AG
    Text: Al/G 1 5 IttZ W2416 IVinbond 2K X 8 CMOS STATIC RAM DESCRIPTION FEATURES The W2416 is a High Speed, Low Power CMOS • Low Power Consumption : Active : 250mW Typ. Static RAM Organized as 2048X8 Bits Standby : 10/zW(Typ.)- L-Version Operates on a Single 5-Volt Supply. It is


    OCR Scan     		PDF W2416 250mW 10/zW W2416 2048X8 B-1930 a7w 80 W2416-70L a7w 16 W2416-10L W2416K-70 A7W 13 a7w 35 a7w 60 A7W AG

    A7W 19

    Abstract: A7W 13 A7W 05 a7w 60 A7W 03 a7w 45 a7w 26 a7w 01 a7w 02 a7w 25
    Text: E G & G JUDSON S7E D • 303Dh0S 0G001Ô3 T ■ DF Series DF-XXX1 _ Features • • Built-in Interference Planar Diffused Filter • Low Noise • Hermetically Sealed • 106 Blocking • Oxide Passivated Operating Data and Specifications at 23 °C:


    OCR Scan     		PDF 303Dh0S 0G001 A7W 19 A7W 13 A7W 05 a7w 60 A7W 03 a7w 45 a7w 26 a7w 01 a7w 02 a7w 25

    Untitled

    Abstract: No abstract text available
    Text: ADE-203-072C Z H M 6 7 W 1 6 6 4 S e r i e s _ J a n .0 3 *1 9 9 4 Target Specification 65536-W ord x 16-Bit High Speed Bi-CMOS Static RAM • DESCRIPTION TheHM67W1664 is asynchronous high speed static RAM organized as 64K word x 1Gbit. These operate 3.3V. It realizes


    OCR Scan     		PDF ADE-203-072C 5536-W 16-Bit TheHM67W1664 10/12ns 44TbE03 00E57Ã HM67W1664JP CP-44D)

    a7w 3 PIN

    Abstract: a7w 16 A7W 98 A7W 14 A7W 29 A7W 85 A7W 42 a7w 37 A7W 36 A7W 34
    Text: EDI816256VA-RP m 256Kx16SRAM x ^ ELECTRONIC DESIGNS, INC. • RuggBdized Plastic ADVANCED 256Kx1B Static RAM CMOS, Monolithic Features The EDI816256VA is a 3.3 volt ruggedized plastic 256Kx16 bit CMOS Static 256Kx16 SRAM that allows the user to capitalize on the


    OCR Scan     		PDF EDI816256VA-RP 256Kx16SRAM 256Kx1B 256Kx16 EDI816256VA EDI816256VA17M44M EDI816256VA20M44M ECH816256VA-RP a7w 3 PIN a7w 16 A7W 98 A7W 14 A7W 29 A7W 85 A7W 42 a7w 37 A7W 36 A7W 34

    army

    Abstract: GNS 3011 T1IS EDI81256CA
    Text: ELECTRONIC DESIGNS INC 30E D m 3230114 00005=11 S • m D i EDI81256CA/LPA/PA H » c t r « ilo O n l g n i In o . i High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256CA/LPA/PA is a 262,144 bit high per­ formance, low power CMOS Static RAM organized as


    OCR Scan     		PDF EDI81256CA/LPA/PA EDI81256CA/LPA/PA 256Kx1. MIL-STD-883, T-46-23-05 army GNS 3011 T1IS EDI81256CA

    a7w transistor

    Abstract: Ba 33 bco A7W 88 transistor a7w A7W 86 a7w 84 a7w 82 a7w 89 a7w 83 transistor a7w 82
    Text: PREPARED BY : SPEC No. LD-10407A DATE SHARP APPRO V ED B Y : D A TE F IL E N O . IS S U E : PAGE TFT LIQUID CRYSTAL DISPLAY GROUP S H A R P C O R P O R A T IO N A u g ,1 9 ,1 9 9 8 : 22 p ag e s A P P L IC A B L E G R O U P T F T L iq u id C ry stal D isplay


    OCR Scan     		PDF LD-10407A LQ181E1DG01 LD-10407-19 181E1D a7w transistor Ba 33 bco A7W 88 transistor a7w A7W 86 a7w 84 a7w 82 a7w 89 a7w 83 transistor a7w 82

    mcm2018a

    Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		PDF A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D

    sun hold RAS 0610

    Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		PDF A16685-7 EMTR1147 sun hold RAS 0610 oki Logic Motorola transistor 7144 MSC2304 M5M41000