A1962 TOSHIBA Search Results

A1962 TOSHIBA Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
DF2B5M4ASL		Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
74HC4053FT		Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
TCR5RG28A		Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F

A1962 TOSHIBA Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor a1962 Abstract: a1962 a1962 TOSHIBA Toshiba transistor A1962 2Sa1962 2SA1962 TOSHIBA TOSHIBA A1962 2SC5242 Text: A1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1962 2SC5242 transistor a1962 a1962 a1962 TOSHIBA Toshiba transistor A1962 2Sa1962 2SA1962 TOSHIBA TOSHIBA A1962 2SC5242
Toshiba transistor A1962 Abstract: a1962 TOSHIBA A1962 TOSHIBA A1962 transistor a1962 2SA1962 TOSHIBA 360MAX Text: A1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1962 2SC5242 2-16C1A Toshiba transistor A1962 a1962 TOSHIBA A1962 TOSHIBA A1962 transistor a1962 2SA1962 TOSHIBA 360MAX
Toshiba transistor A1962 Abstract: a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242 Text: A1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1962 2SC5242 Toshiba transistor A1962 a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242
Toshiba transistor A1962 Abstract: No abstract text available Text: A1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1962 2SC5242 Toshiba transistor A1962
Untitled Abstract: No abstract text available Text: A1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1962 2SC5242
transistor a1962 Abstract: Toshiba transistor A1962 A1962 2SA1962 TOSHIBA 2SA1962 transistor 2sc5242 a1962 TOSHIBA Text: A1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1962 2SC5242 2-16C1A transistor a1962 Toshiba transistor A1962 A1962 2SA1962 TOSHIBA 2SA1962 transistor 2sc5242 a1962 TOSHIBA