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    A BEAM LEAD RING QUAD OF FOUR SCHOTTKY DIODES Search Results

    A BEAM LEAD RING QUAD OF FOUR SCHOTTKY DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    A BEAM LEAD RING QUAD OF FOUR SCHOTTKY DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DMF2190

    Abstract: DMJ2312-255 DMF2821-250 ka-band mixer DME2459 DMF2454 mixer diodes DME2127-250 DMF2835-000 DMF2820
    Text: Silicon Beam–Lead Schottky Barrier Mixer Diodes DME, DMF and DMJ Series Features Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically Sealed Packages SPC Controlled Wafer Fabrication Description Alpha beam–lead and chip Schottky barrier mixer


    Original     		PDF 015mm) 005mm) DMF2190 DMJ2312-255 DMF2821-250 ka-band mixer DME2459 DMF2454 mixer diodes DME2127-250 DMF2835-000 DMF2820

    MSPD2018

    Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
    Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800


    Original     		PDF foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode

    gold metal detectors

    Abstract: IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
    Text: Schottky Barrier Diodes Characteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes. The


    Original     		PDF AN988, 26/IB gold metal detectors IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes

    MSPD2018

    Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
    Text: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for


    Original     		PDF A17084 MSPD2018 m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345

    diode hp 2800 SMD

    Abstract: diode hp 2800 smd schottky diode T4 HSMP-2810 gold metal detectors diode hp 2810 HSMS-2862 TAG 9101 Waveform Clipping With Schottky diode hp 5082-2751
    Text: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-2805 HSMS-2807 HSMS-2808 HSMP-2810 HSMS-2812 HSMS-2813 diode hp 2800 SMD diode hp 2800 smd schottky diode T4 gold metal detectors diode hp 2810 HSMS-2862 TAG 9101 Waveform Clipping With Schottky diode hp 5082-2751

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    LNA ku-band

    Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)


    Original     		PDF 11a/b/g) 5988-9866EN LNA ku-band ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz

    ku-band pll lnb

    Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


    Original     		PDF 11a/b/g AV00-0061EN AV00-0116EN ku-band pll lnb MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package

    MA40483

    Abstract: A4049 A beam lead ring quad of four Schottky diodes
    Text: an A M P company Schottky Barrier Beam Lead and Packaged Ring Quads V3.00 Case Styles Features • • • • • Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions for High Isolation High Barriers for LO Power Levels up to +27 dBm


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    A beam lead ring quad of four Schottky diodes

    Abstract: No abstract text available
    Text: Silicon Beam-Lead Schottky Barrier Mixer Diodes EQA lpha DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication Description


    OCR Scan     		PDF 015mm) 005mm) A beam lead ring quad of four Schottky diodes

    e327425

    Abstract: F2138-000 DMJ2088-255
    Text: Silicon Beam-Lead ESAlpha Schottky Barrier Mixer Diodes DME, DMF and DMJ Series Features • Ideal for M IC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SP C Controlled W afer Fabrication ^ > > p -


    OCR Scan     		PDF 01Omm) 015mm) 005mm) e327425 F2138-000 DMJ2088-255

    404-011

    Abstract: dmb2856 404002
    Text: Silicon Beam-Lead and Chip EHAlpha Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fab Description


    OCR Scan     		PDF DMB2853 DMB2854 DMB2855 DMB2856 404-011 404002

    C1156

    Abstract: No abstract text available
    Text: bflE I> TEKELEC COMPONENTS • T G 0 3 7 Û 7 D D G D B M M 0T4 SILICON SCHOTTKY DIODES Q U A D SILICO N BEAM LEAD SCHOTTKY BARRIER DIODES Q uad silicon beam lead Schottky barrier diodes are available In star and ring configurations low drive level versions , principally for use In double balanced mixers. Their monolithic construction ensures close


    OCR Scan     		PDF

    DME2857-234

    Abstract: F2011 F2012 ka band Limiter ka-band mixer DME2127-250 DME2859-000 DME2859-234 DME2957-000 DMF2820-000
    Text: Silicon Beam-Lead Schottky Barrier Mixer Diodes DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication Description Alpha beam -lead and chip Schottky barrier mixer


    OCR Scan     		PDF 015mm) 005mm) DME2857-234 F2011 F2012 ka band Limiter ka-band mixer DME2127-250 DME2859-000 DME2859-234 DME2957-000 DMF2820-000

    DMJ4317

    Abstract: DMJ4708 DMF5847 DME3256 DMF3383 DMJ6575 ka-band mixer DME3040 DMF5848 diode ring mixer
    Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes ËMlph DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication


    OCR Scan     		PDF l2-34 AS006R2-10 AK002M4-31 AS004L1-08 AS406M2-01 AK004L1â AS004L1â AS406R2-01 AK004M1-11 AS004L2-11 DMJ4317 DMJ4708 DMF5847 DME3256 DMF3383 DMJ6575 ka-band mixer DME3040 DMF5848 diode ring mixer

    dmj4317

    Abstract: No abstract text available
    Text: Silicon Beam-Lead and Chip EDAIphi Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication


    OCR Scan     		PDF DMF3242 DME4399 DME3346 DME3974 DMJ4708 DMJ4394 DMJ3112 DMF3975 DME3978 DMF3179 dmj4317

    e3055

    Abstract: j4313 F2822 j2833 F3373 J2303 E3009 F2189 F4734 me2206
    Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication Description


    OCR Scan     		PDF F3179 DMJ3961 F3242 E4399 J4708 E3346 J4394 F3972 E3974 DMJ3112 e3055 j4313 F2822 j2833 F3373 J2303 E3009 F2189 F4734 me2206

    gold metal detectors

    Abstract: Schottky diode wafer
    Text: Schottky barrier diode technology Signal conditioning is the major application field for Schottky barrier d io d e s : speed switching, mixing, detecting, clipping and clamping. Frequency ranges from digital to m icrowave are supported. The outstanding characteristic of Schottky diode construction Is the barrier: a metal layer deposited


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    HSMS0001

    Abstract: Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode
    Text: C haracteristics o f Schottky Barrier D iodes A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconduc­ tor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes.


    OCR Scan     		PDF 26/Ig HSMS0001 Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode

    IN5711

    Abstract: Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes
    Text: W O ñ H EW LETT' 1"KM PACKARD Schottky Barrier Diodes C haracteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes


    OCR Scan     		PDF AN988, 26/Th IN5711 Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes

    MA40430

    Abstract: MA40483 Semiconductor ring structure MA40440 diode ring mixer MA40285
    Text: 4ifccoti Schottky B arrier Beam-Lead and Packaged Ring Quads For Double Balanced Mixers up to 18 GHz Features • SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING ■ HIGH RELIABILITY ■ CLOSELY MATCHED JUNCTION FOR HIGH ISOLATION ■ HIGH BARRIERS FOR LO POWER


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    diode BY 226

    Abstract: DIODE RING QUAD
    Text: n/ A- CO M S E U I C O N D i B R L N G T O N 11 D • 5fc>45214 0 0 Q 1 3 1 0 3 ■ M I C 7^ 07-0 Schottky Barrier Beam-Lead and Packaged Ring Quads For Double Balanced Mixers up to 18 GHz Features ■ SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING ■ HIGH RELIABILITY


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    dmj4317

    Abstract: DMF5848 DME3256 DME3040 ka-band mixer DM228 DME3006 DME3124 dmf5848 diode DMF2820
    Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes EHAIph DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication


    OCR Scan     		PDF AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 AK006L1-00 AS004M2-08 dmj4317 DMF5848 DME3256 DME3040 ka-band mixer DM228 DME3006 DME3124 dmf5848 diode DMF2820

    5964-3898E

    Abstract: Rf detector HSMS 8202 S280A sot-23 diode common anode t4 5966-0784E Diodo b4 HSMS-2862 HSMS-2813 diode hp 2800 SMD zero bias schottky diode detector
    Text: w ag H EW L E T T mLHA PA CK A R D Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at:


    OCR Scan     		PDF HSMS-2800 HSMS-2802 HSMS-2803 HSMP-2810 HSMS-2812 HSMS-2813 HSMS-2807 HSMS-2808 HSMS-2S17 HSMS-2818 5964-3898E Rf detector HSMS 8202 S280A sot-23 diode common anode t4 5966-0784E Diodo b4 HSMS-2862 diode hp 2800 SMD zero bias schottky diode detector