BSS92
Abstract: TP1220L TP2020L VP2020L TP/VP2020L
Text: TP1220L, TP/VP2020L, BSS92 Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L -120 20 @ VGS = -4.5 V -1 to -2.4 -0.12 TP2020L -200 20 @ VGS = -4.5 V -1 to -2.4 -0.12
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TP1220L,
TP/VP2020L,
BSS92
TP1220L
TP2020L
VP2020L
O226AA)
P-37994--Rev.
BSS92
TP1220L
TP2020L
VP2020L
TP/VP2020L
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BSS92
Abstract: marking s92 VP2020L 2020L S0427
Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15
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VP2020L,
BSS92
VP2020L
O-226AA)
S-04279--Rev.
16-Jun-01
BSS92
marking s92
VP2020L
2020L
S0427
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TP2020L
Abstract: bss92 VP2020L TP1220L
Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4
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TP1220L,
TP/VP2020L,
BSS92
TP1220L
TP2020L
VP2020L
O-226AA)
P-37994--Rev.
08-Aug-94
TP2020L
bss92
VP2020L
TP1220L
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BSS92
Abstract: TP2020L TP1220L VP2020L
Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4
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TP1220L,
TP/VP2020L,
BSS92
TP1220L
TP2020L
VP2020L
O-226AA)
S-52426--Rev.
14-Apr-97
BSS92
TP2020L
TP1220L
VP2020L
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bss92
Abstract: VP2020L 2020L
Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15
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VP2020L,
BSS92
VP2020L
18-Jul-08
bss92
VP2020L
2020L
|
vp2020l
Abstract: No abstract text available
Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4
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TP1220L,
TP/VP2020L,
BSS92
TP1220L
TP2020L
VP2020L
O-226AA)
S-52426--Rev.
14-Apr-97
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Untitled
Abstract: No abstract text available
Text: VP2020L Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)30 I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)800m Minimum Operating Temp (øC)
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VP2020L
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BSS92
Abstract: VP2020L
Text: VP2020L, BSS92 Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8
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VP2020L,
BSS92
VP2020L
O-226AA)
S-00199--Rev.
1-Jan-00
BSS92
VP2020L
|
vp2020l
Abstract: BSS92
Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15
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VP2020L,
BSS92
VP2020L
O-226AA
08-Apr-05
BSS92
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
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70611
Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
Text: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a
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AN804
retur5600
VP0300L
O-226AA
VN0300L
TP0610L
2N7000
70611
FET pair n-channel p-channel
mosfet discrete totem pole drive CIRCUIT
2n7000+complement
2n7000 complement
logic level complementary MOSFET
mosfet discrete totem pole CIRCUIT
Logic Level p-Channel Power MOSFET
AN804
Si9942DY
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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2n7000 complement
Abstract: VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610
Text: AN804 Siliconix PĆChannel MOSFETs, the Best Choice for HighĆSide Switching Ed Oxner Circuit Applications Historically, pĆchannel FETs were not considered as useful as their nĆchannel counterparts. The higher resistivity of pĆtype silicon, resulting from its lower carrier mobility, put
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AN804
VP0300L
O226AA
VN0300L
TP0610L
2N7000
VP2020L
2n7000 complement
VP0300L
mosfet discrete totem pole drive CIRCUIT
2n7000+complement
2n7000 equivalent
AN804
Si9939DY
Si9942DY
Si9958DY
TP0610
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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FET package TO-71
Abstract: SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L
Text: Transistors Siliconix Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) Max (V) tON Max (ns) Ciss Typ (pF) ID Max (A) PD Max (W) –80 –100 –120 –200 –200 –200 –240 5 5 20 20 20 20 10 –4.5 –4.5 –2.4 –2.8 –2.5 –2.4 –2.5 55 55 25
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O-226AA
VP0808L
VP1008L
TP1220L
BSS92
VP2020L
TP2020L
VP2410L
O-206AF
3N164
FET package TO-71
SST271
2N4416A JANTX
TO72 package n-channel jfet
jfet 2N5198
3N164
BSS92
TP2020L
VP0808L
VP2020L
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p-channel mosfet bss92
Abstract: vishay siliconix code marking to-92 bss92 70210 VP2410
Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V ) rDS(on) Max ( Q ) VGS<th) (V ) I d (A) VP2020L -2 0 0 20 @ V q s = -4 .5 V -0 .8 to -2 .5 -0 .1 2 BSS92 -2 0 0 20 @ V qs = - 1 0 V -0 .8 t o -2 .8 -0 .1 5
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PDF
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VP2020L,
BSS92
VP2020L
O-226AA
2410L
S-04279--
16-Jun-01
p-channel mosfet bss92
vishay siliconix code marking to-92
bss92
70210
VP2410
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vp2020l
Abstract: IC 6201
Text: VPDQ20 P-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • VP2020L, BSS92 Single Chip • Available as VPDQ1CHP DEVICE TYPICAL CHARACTERISTICS 6-198 O u tp u t C h a ra cte ristics O hm ic Region C h a ra c te ris tic s V DS (V) V DS (V)
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OCR Scan
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PDF
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VPDQ20
O-226AA)
VP2020L,
BSS92
VPDQ20
125X1
vp2020l
IC 6201
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Untitled
Abstract: No abstract text available
Text: J ffiS S b VP2020L P-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V yp -2 0 0 20 V (BR)DSS TO-92 (TO-226AA) BOTTOM VIEW •d (A) - 0 .1 2 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VPDQ20 3 1 ABSOLUTE MAXIMUM RATINGS (TA 25°C Unless Otherwise Noted)
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PDF
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VP2020L
O-226AA)
VPDQ20
100-C
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TP2020L
Abstract: VP2020L BSS92 TP1220L TF1725
Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number n>S on M a x (Q ) VGS(th) (V) I d (A ) TP1220L -120 20@ VGs = -4 .5 V -1 to -2.4 -0.12 TP2020L -200 20 @ VGs -1 to -2.4 -0.12 VP2020L -200 20@ Vg s = -4 .5 V
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OCR Scan
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PDF
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tp1220l,
tp/vp2020l,
bss92
TP1220L
TP2020L
VP2020L
BSS92
-100V
O-226AA)
S-52426â
TF1725
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Untitled
Abstract: No abstract text available
Text: Temic TP1220L, TP/VP2020L, BSS92 Semiconductors P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) n>s(on) Max (Q) VGS(th) (V) Id (A) TP1220L -120 20 @ Vq S = -4.5 V -1 to -2.4 -0.12 TP2020L -200 20 @ Vqs - - 4 - 5 V
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OCR Scan
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PDF
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TP1220L,
TP/VP2020L,
BSS92
TP1220L
TP2020L
VP2020L
S-52426â
14-Apr-97
00EE570
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Untitled
Abstract: No abstract text available
Text: VPDQ1 DIE P-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d VPDQ1CHP* BSS92 TP2020L TP1220L VP2020L 0.038 ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the 0. 965 ( 0 .254)
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PDF
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BSS92
TP2020L
TP1220L
VP2020L
VPDQ20.
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BSS92
Abstract: p-channel mosfet bss92
Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number V BR DSS M in (V ) TP1220L -1 2 0 20 @ VGs = - 4 .5 V - I to - 2 .4 -0 .1 2 TP2020L -2 0 0 20 @ V Gs = - 4 5 V -1 to -2 .4 -0 .1 2 VP2020L -2 0 0 20 @ V GS = -4 .5 V
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OCR Scan
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PDF
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TP1220L,
TP/VP2020L,
BSS92
TP1220L
TP2020L
VP2020L
BSS92
S-52426--Rev.
14-Apr-97
p-channel mosfet bss92
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Untitled
Abstract: No abstract text available
Text: T em ic TP1220L, TP/VP2020L, BSS92_ sì„conix P-Channel Enhancement-Mode MOS Transistors Product Summary P art N um ber V BR DSS M in (V) r DS(on) M ax (£2) VGS(lh) (V) I d (A) TP1220L -1 2 0 20 @ V GS = -4 .5 V —1 to -2 .4 -0 .1 2 TP2020L -2 0 0
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OCR Scan
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PDF
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TP1220L,
TP/VP2020L,
BSS92_
TP1220L
TP2020L
VP2020L
BSS92
P-37994--
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VP2020
Abstract: vp2020l
Text: SILICONIX INC ÔSS473S 1ÛE D 0ümi2S VP2020 SERIES C7SiRcc3nix J.Æ P-Channel Enhancement-Mode MOS Transistors in c o rp o ra te d " T -3 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER Ö V BR DSS fDS(ON) (fl) (V) >D (A) PACKAGE TO-2Q6AC (TO-52)
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OCR Scan
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PDF
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SS473S
VP2020
VP2020L
VP2020E
O-206AC
VPDQ20
VP2020E.
300Ms,
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