Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0121N Silicon NPN epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR221N x 2 Parameter
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2002/95/EC)
XP0121N
UNR221N
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UN1119
Abstract: UN221N UNR1119 UNR221N XP04286
Text: Composite Transistors XP04286 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR221N(UN221N)+UNR1119(UN1119) • Absolute Maximum Ratings Parameter 0 to 0.1
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XP04286
UNR221N
UN221N)
UNR1119
UN1119)
UN1119
UN221N
XP04286
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UNR221N
Abstract: XP0121N
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0121N Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR221N x 2 Parameter
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2002/95/EC)
XP0121N
UNR221N
UNR221N
XP0121N
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UNR221N
Abstract: XP0121N
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0121N Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • UNR221N x 2 • Code SMini5-G1 • Pin Name 1: Base (Tr1) 2: Emitter 3: Base (Tr2)
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2002/95/EC)
XP0121N
UNR221N
UNR221N
XP0121N
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UN221N
Abstract: UNR221N XP0121N
Text: Composite Transistors XP0121N Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR221N UN221N x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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XP0121N
UNR221N
UN221N)
UN221N
XP0121N
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Panasonic Main Unit VB -5150
Abstract: UNR211N UNR221N UP0431N
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0431N Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits M Di ain sc te on na tin nc ue e/ d Collector-base voltage (Emitter open)
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2002/95/EC)
UP0431N
Panasonic Main Unit VB -5150
UNR211N
UNR221N
UP0431N
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04286 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number
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2002/95/EC)
XP04286
UNR221N
UNR2119
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0431N Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Two elements incorporated into one package
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XP0431N
UNR221N
UNR211N
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IC3001
Abstract: UP0431N UNR211N UNR221N
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0431N Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Features ■ Basic Part Number 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)
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UP0431N
IC3001
UP0431N
UNR211N
UNR221N
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN0421N XN421N Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 1.1+0.2 –0.1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO
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XN0421N
XN421N)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04286 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package
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XP04286
UNR221N
UNR2119
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|
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0421NG Silicon NPN epitaxial planar type For switching For digital circuits • Features Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP0421NG
UNR221N
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP03391 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm (0.425) For digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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XP03391
UNR221N
UNR2116
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UP0431N
Abstract: UN211N UN221N UNR211N UNR221N
Text: Composite Transistors UP0431N Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 4 • Features ■ Basic Part Number of Element 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package
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UP0431N
UP0431N
UN211N
UN221N
UNR211N
UNR221N
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UNR211N
Abstract: UNR221N XP0431N
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0431N Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For digital circuits • Features ue pl d in an c
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2002/95/EC)
XP0431N
UNR211N
UNR221N
XP0431N
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UNR2119
Abstract: UNR221N XP04286
Text: Composite Transistors XP04286 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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XP04286
UNR221N
UNR2119
UNR2119
UNR221N
XP04286
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UNR221N
Abstract: XP0121N
Text: Composite Transistors XP0121N Silicon NPN epitaxial planar type 0.425 For switching/digital circuits Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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XP0121N
UNR221N
XP0121N
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UNR211N
Abstract: UNR221N XP0431N
Text: Composite Transistors XP0431N Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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XP0431N
UNR221N
UNR211N
UNR211N
UNR221N
XP0431N
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UNR2116
Abstract: UNR221N XP03391
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP03391 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm (0.425) 0.20±0.05 5 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 Th an W is k y
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XP03391
UNR2116
UNR221N
XP03391
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UNR2210
Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou
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2002/95/EC)
UNR221x
UN221x
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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