AR8121-AL1E
Abstract: IT8502 IT8502E 2822A RT8206A SLB95 cantiga gl40 CX20582 maa7824 mb39a132
Text: 5 D C B A 4 01 Block Diagram 61 02 System Setting 62 USB CONN 03 POWER SEQUENCE 63 * 04 CPU-Penryn HOST 64 * 05 CPU-Penryn(PWR) 65 06 * 66 * 07 Cantiga(HOST) 67 DEBUG CONN 08 Cantiga(DMI & CFG) 68 DC & BAT IN 09 Cantiga(GRAPHIC) 69 * 10 Cantiga(DDR2) 70 *
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IT8512E-L
CX20582
GEN-ICS9LPR363DGLF-T
RTL8111C
RT9043-GB
TPS51117
APL5913
TPS51116
ISL6262A
AR8121-AL1E
IT8502
IT8502E
2822A
RT8206A
SLB95
cantiga gl40
maa7824
mb39a132
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MMT3904
Abstract: M3904 MMCM3903 MMCM3904 MMT3903 MMT3905 MMT3906
Text: MMT3903, MMT3904 SILICON MMCM3903, MMCM3904 (ceramic package) MICRO-T NPN SILICON ANNULAR TRANSISTORS . . . designed for general purpose switching and am plifier applications and for complementary circu itry w ith PNP type M M T3905 and M M T3906 where high-density packaging is required.
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MMT3903,
MMT3904
MMCM3903,
MMCM3904
MMT3905
MMT3906
MMT3903
MMCM3903
MMT3904
M3904
MMCM3904
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Untitled
Abstract: No abstract text available
Text: FMM T3905 FMM T3906 SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: T3905 - 2W FMMT3906 - 2A ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb = 25°C
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T3905
T3906
FMMT3905
FMMT3906
FMMT3905/3906
FMMT3904
FMMT3905
-10/jA
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sfnf101a
Abstract: electrical symbols
Text: SOLÎTRON DEVICES INC 7Ü DE | Û3t.flti02 O Q O l ^ l b | T-39-05 SWITCH MOS SFNF101A POWER MOS PACKAGE TO-39 MAXIMUM RATINGS *DM VGS PD XL ^J oper T „ stg “ 100 Drain Current, Continuous @ T »25°C c Drain Current, Pulsed 1 .5 4.5 A Voltage, Gate-to-Source
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flti02
T-39-05
SFNF101A
5M6-24UNF-2A
P06fTKM
eA03AT
sfnf101a
electrical symbols
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2N6661
Abstract: 2N6660 2N6661 transistor 2N6659 max 1988
Text: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.
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2N6659
2N6660
2N6661
2N6661
T-39-05
2N6661 transistor
max 1988
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BCW65C
Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A
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OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
BCW65C
FERRANTI ELECTRONICS
transistors DEVICE MARKING
BF197P
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MMCM3905
Abstract: MMCM3906 MMT3903 MMT3904 MMT3905 MMT3906 si109
Text: M M T 3 9 0 5 , M M M C M M 3 9 0 5 , SILICON T 3 9 0 6 M M C M 3 9 0 6 ( c e r a m ic p a c k a g e ) MICRO-T PNP SILICO N A N N U LA R P N P S IL IC O N S W IT C H IN G A N D A M P L IF IE R T R A N S IS T O R S T R A N SISTO R S . . . designed for general purpose switching and amplifier applications
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MMT3905
MMT3906
MMCM3905,
MMCM3906
MMT3903
MMT3904
Cont00
MMCM3905
MMCM3906
MMT3906
si109
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FMMT3906
Abstract: SOT213 FMMT3905 ferranti BFQ31 FMMT3903 FMMT3904 PNP 3906 SOT23 T3905 BCW2
Text: FERRANTI semiconductors T3905 FMMT3906 PNP Silicon Planar General Purpose Switching Transistors D E S C R IP T IO N These d e vice s are intended fo r use in sm all and m edium sign a l a m p lifica tio n a p p lica tio n s fro m d.c. to radio frequencies.
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FMMT3905
FMMT3906
FMMT3903
FMMT3904.
OT-23
FMMT5087
BCW69
BCW70
BCX71G
FMMT3906
SOT213
ferranti
BFQ31
FMMT3904
PNP 3906 SOT23
T3905
BCW2
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Untitled
Abstract: No abstract text available
Text: 32E D • Ö23b32ü 0017107 s m s i p BSP 149 SIPMOS N Channel MOSFET T - 3 *7 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current • Drain-source on-resistance • Total power dissipation Type M arking O rdering code for
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23b32Ã
Q67000-S071
00A//Ã
-100V
00A/MS
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Untitled
Abstract: No abstract text available
Text: 32E D • Ö23b320 QG171ÜS «SIP SIP M O S N Channel MOSFET _ SIEMENS/ SPCL-, SEMICONDS Preliminary Data • SIP M O S - depletion mode • Drain-source voltage • Continuous drain current Vfcs = 600V /D = 0.100A • Drain-source on-reslstance • Total power dissipation
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23b320
QG171Ã
Q62702-S655
-100V.
00A//J3
-100V,
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Untitled
Abstract: No abstract text available
Text: BSE I • ÖS3b3Ea CJ017114 T SIPMOS N Channel MOSFET ISIP r - t f - o s - BSP 296 SIEMENS/ SPCL-. SEMICONDS • SIPMOS - enhancement mode • Draln-source voltage Vfo = 100V • Continuous drain current / „ = 1.0A • Drain-source on-resistance • Total power dissipation
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CJ017114
Q67000-S067
23b320
QCJ1711Ã
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Untitled
Abstract: No abstract text available
Text: 32E D • Û23b32ü 00170=10 S H S I P SIPM O S N Channel MOSFET SIEMENS/ SPCL-, SEMICONDS T-21- é>5~ _ BSP 125 Preliminary Data • S IP M O S - enhancement mode • Drain-source voltage Vfes = 600V • Continuous drain current lB = .11OA • Drain-source on-resistance
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23b32Ã
T-21-
62702-S654
S3b32Q
T-39-05
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Untitled
Abstract: No abstract text available
Text: 32E D • Ô53b320 □ 01711=1 1 ■ SIP BSP 297 SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS T - M - O S * • SIPMOS - enhancement mode • Drain-source voltage Vis = 200V • Continuous drain current l 0 - 0.6A • Drain-source on-resistance fWon> = 2 .0 0
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53b320
Q67000-S068
A23b320
T-39-05
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MGFK30M4045
Abstract: E 212 fet DC bias of gaas FET
Text: TL MITSUBISHI {DISCRETE SC3- D E ltS M T flH T 0D1G142 7 MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK30M 4045 FOR MICROWAVE PO W ER A M P LIFIE R S IN TERN A LLY MATCHED 6249829 M ITSU BISH I D ISC R ETE SC 9 1 D 10142 D T-39-ôS DESCRIPTION The MGFK30M4045 is an internally impedance-matched
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0D1G142
GFK30M
MGFK30M4045
E 212 fet
DC bias of gaas FET
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1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
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27TfC
1N5438
tfc 5630
2N5161
germanium
2N4193
1N1319
A2023 transistor
2N217
1N5159
transistor bf 175
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im7984-3
Abstract: IM-7984-3 Avantek, Inc
Text: □ fc,E D I AVANTEK INC IM-7984-3 3 Watt, 7.9-8.4 GHz Internally Matched Power GaAs FET 0A V A N T E K Features • • • • • • GÜQbOEb «1 | T-39-05 Avantek IMFET Package T.9-8.4 GHz Minimum Bandwidth Internally Matched Input/Output Impedance
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IM-7984-3
T-39-05
im7984-3
Avantek, Inc
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sfnf201a
Abstract: No abstract text available
Text: SOLITRON DEVICES INC _ ' 70 »Flögböboa 0002027 0 |~T-39-05 SWITCH MOS SFNF201A POWER MOS PACKAGE TO-39 MAXIMUM RATINGS VDS *D XDM VGS PD lL TJ oper T . stg UNITS PARAMETER SYMBOL Voltage, Drain to Source Drain Current, Continuous @ Tc=25°C Drain Current, Pulsed
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T-39-05
SFNF201A
5M6-24UNF-2A
P06fTKM
eA03AT
sfnf201a
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sfnf201c
Abstract: No abstract text available
Text: SOLITRON DEVICES INC 70 » e | flBt.flbD2 ODOaDET 3 | S W IT C H T-39-05 IV IO S N' SFN F201C POWER MOS PACKAGE TO-39 MAXIMUM RATINGS VDS *D IDM > CO O ' PD XL ^J oper T stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 2 00 V Drain Current, Continuous @ Tc=25°C
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T-39-05
F201C
5M6-24UNF-2A
P06fTKM
eA03AT
sfnf201c
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T-3V05
Abstract: T3905 2N7012
Text: 33E D SILICONIX INC f f f S ilico n ix 0254735 OOlhOlO 1 « S I X • 2N7012 incorporated 'T '- S ^ - O S N-Channel Enhancement Mode Transistor 4-PIN DIP Similar to TO-250 TOP VIEW PRODUCT SUMMARY V(BR|DSS 60 T 0.35 *D (A) 1.2 1 GATE 2 SOURCE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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2N7012
T-3V05
O-250)
2S473S
T-39-05
T3905
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VN1220
Abstract: No abstract text available
Text: SUPERTEX INC 3 SE D • 07732^5 00QE27b ö M S T X T -3 9 -0 5 N-Channel Enhancement-Mode Vertical DMOS FETs 7 “- 39 - / / Ordering Information Standard Commercial Devices t O rd er N um b er / Package R d S<ON '□ ON) BV oqs (m ax) (m in) TO-39 TO-220
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00QE27b
VN1216N2
VN1220N2
O-220
VN1216N5
VN1220N5
VN1216ND
VN1220ND
Q227T
T-39-05
VN1220
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Untitled
Abstract: No abstract text available
Text: SOLITRON DEVICES INC 7 SFNF061B 70 IDE | 0 3 L . a b O E ODOl^t. RATINGS UNITS PA R A M E T E R SYMBOL Voltage, D r a i n to Source D r a i n Current, Continuous @ T =25°C c D r a i n Current, Pulsed ^J oper T stg Voltage, G a t e - to-Sou r c e XDSS V 0N)
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T-39-05
SFNF061B
5M6-24UNF-2A
P06fTKM
eA03AT
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Untitled
Abstract: No abstract text available
Text: 32E D m fl23b320 0017060 2 H S I P SIPMOS N Channel MOSFET f * ' 5*1 ^ BSP 89 SIEMENS/ SPCL-, SEMICONDS Preliminary Data • SIPMOS - enhancement mode • Draln-source voltage • Continuous drain current • Draln-source on-resistance • Total power dissipation
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fl23b320
Q67002-S652
23b320
T-39-05
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MARKING CODE A06
Abstract: marking 1G SOT23 sot-23 MARKING CODE G1 AH A06 sot-23 body marking 1P NPN e30551 marking A06 A12 marking amplifier A55 marking sot-23 Marking G1
Text: FERRANTI * semiconductors FMMT-A05 FM MT-AO6 NPN Silicon Planar Medium Power Transistors D E S C R IP T IO N M e d iu m pow er transistors designed fo r sm all and medium am plification from d.c. to radio frequencies, in applica tio n s such as Audio Frequency Am plifiers, Drivers,
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FMMT-A05
FMMT-A55
FMMT-A56.
OT-23
FMMT-A13
FMMT-A14
BCW67A
FMMT-A20
MARKING CODE A06
marking 1G SOT23
sot-23 MARKING CODE G1
AH A06
sot-23 body marking 1P NPN
e30551
marking A06
A12 marking
amplifier A55 marking
sot-23 Marking G1
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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