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    SI8401DB Price and Stock

    Vishay Siliconix SI8401DB-T1-E1

    MOSFET P-CH 20V 3.6A 4MICROFOOT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI8401DB-T1-E1 Digi-Reel 1
    • 1 $1.72
    • 10 $1.089
    • 100 $1.72
    • 1000 $0.52593
    • 10000 $0.52593
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    SI8401DB-T1-E1 Reel 3,000
    • 1 -
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    • 10000 $0.46297
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    SI8401DB-T1-E1 Cut Tape 1
    • 1 $1.72
    • 10 $1.089
    • 100 $1.72
    • 1000 $0.52593
    • 10000 $0.52593
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    Vishay Siliconix SI8401DB-T1-E3

    MOSFET P-CH 20V 3.6A 4MICROFOOT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI8401DB-T1-E3 Reel 3,000
    • 1 -
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    • 10000 $0.925
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    RS SI8401DB-T1-E3 Bulk 3,000
    • 1 -
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    • 10000 $1.11
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    Bristol Electronics SI8401DB-T1-E3 1,520 3
    • 1 -
    • 10 $1.8
    • 100 $1.125
    • 1000 $0.63
    • 10000 $0.594
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    Quest Components SI8401DB-T1-E3 1,216
    • 1 $2.4
    • 10 $2.4
    • 100 $2.4
    • 1000 $0.75
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    SI8401DB-T1-E3 233
    • 1 $1.945
    • 10 $1.945
    • 100 $1.167
    • 1000 $1.0503
    • 10000 $1.0503
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    Vishay Intertechnologies SI8401DB-T1-E3

    P Channel Mosfet, -20V, 3.6A, Micro Foot, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:2.77W Rohs Compliant: Yes |Vishay SI8401DB-T1-E3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI8401DB-T1-E3 Reel 3,000
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    Vishay Intertechnologies SI8401DB-T1-E1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI8401DB-T1-E1 2,640
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    Quest Components SI8401DB-T1-E1 2,112
    • 1 $1.68
    • 10 $1.68
    • 100 $1.68
    • 1000 $0.672
    • 10000 $0.588
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    SI8401DB Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si8401DB Vishay Intertechnology P-Channel 20-V (D-S) MOSFET Original PDF
    SI8401DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    Si8401DB SPICE Device Model Vishay P-Channel 20-V (D-S) MOSFET Original PDF
    SI8401DB-T1 Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    SI8401DB-T1-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.6A 2X2 4-MFP Original PDF
    SI8401DB-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.6A 2X2 4-MFP Original PDF
    SI8401DB-T1-E3 Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF

    SI8401DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UP78

    Abstract: Aaa SMD MARKING
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


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    PDF Si8401DB Si3443DV Si8401DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 UP78 Aaa SMD MARKING

    Si3443DV

    Abstract: Si8401DB Si8401DB-T1-E1
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original
    PDF Si8401DB Si3443DV Si8401DB-T1-E1 11-Mar-11

    Si8401DB-T1

    Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
    Text: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 +0.10 1.50 -0.00 A 2.000.05 B B 1.75  0.1 3.5  0.05 8.0 +0.30 -0.10 SECTION A-A


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    PDF 275-mm Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 10-sprocket 93-5211-x) 92-5210-x)

    Si3443DV

    Abstract: Si8401DB Si8401DB-T1-E1
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original
    PDF Si8401DB Si3443DV Si8401DB-T1-E1 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Tape Information Vishay Siliconix MICRO FOOT 2 x 2: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 + 0.10 Ø 1.50 - 0.00 A 2.000.05 B B 1.75  0.1 3.5  0.05 8.0 +- 0.30 0.10 SECTION A-A


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    PDF Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 93-5211-X) 92-5210-X) C10-0948-Rev. 11-Oct-10 93-5222-X

    01802

    Abstract: No abstract text available
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original
    PDF Si8401DB Si3443DV Si8401DB-T1-E1 11-Mar-11 01802

    Si8401DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si8401DB 02-Mar-02

    Untitled

    Abstract: No abstract text available
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.9 0.095 @ VGS = −2.5 V −4.1 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original
    PDF Si8401DB Si3443DV Si8401DB-T1 Si8401DB-T1--E1 S-50066--Rev. 17-Jan-05

    S-20804

    Abstract: MARKING 8401
    Text: Si8401DB New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V –4.9 0.095 @ VGS = –2.5 V –4.1 –20 D TrenchFETr Power MOSFET D New MICRO FOOTt Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


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    PDF Si8401DB Si3443DV S-20804--Rev. 01-Jul-02 S-20804 MARKING 8401

    J-STD-020A

    Abstract: Si3443DV Si8401DB Si8401DB-T1
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.9 0.095 @ VGS = −2.5 V −4.1 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original
    PDF Si8401DB Si3443DV Si8401DB-T1 Si8401DB-T1--E1 08-Apr-05 J-STD-020A

    J-STD-020A

    Abstract: Si3443DV Si8401DB Si8401DB-T1
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.9 0.095 @ VGS = −2.5 V −4.1 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original
    PDF Si8401DB Si3443DV Si8401DB-T1 Si8401DB-T1--E3 S-40384--Rev. 01-Mar-04 J-STD-020A

    Si8401DB-T1

    Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
    Text: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.00"0.10 4.00"0.10 +0.10 O1.50−0.00 A 2.00"0.05 0.254"0.02 B BO B 1.75 " 0.1 3.5 " 0.05 8.0 +0.30 −0.10 5_ MAX


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    PDF 275-mm Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 10-sprocket 93-5211-x) 92-5210-x)

    Si8413DB

    Abstract: si8409db Si8401DB Si8402DB Si8405DB Si8411DB Si8415DB Si8419DB t1/Si8413DB
    Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB MICRO FOOTr 2X2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8401DB


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    PDF Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB 275-mm t1/Si8413DB

    Si8407DB

    Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB
    Text: Device Orientation—MICRO FOOTrPackages Vishay Siliconix Part Number Index APPENDIX AĊMOSFETS Part Number APPENDIX BĊANALOG ICS Appendix Part Number Appendix Si8401DB A -1 DG3000DB B -1 Si8405DB A -1 DG3001DB B -2 Si8407DB A -2 DG3408DB B -3 Si8900EDB A -3


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    PDF Si8401DB DG3000DB Si8405DB DG3001DB Si8407DB DG3408DB Si8900EDB DG3409DB Si8902EDB S-31635--Rev. Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB

    Si8401DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si8401DB S-52398Rev. 21-Nov-05

    DG3000

    Abstract: No abstract text available
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original
    PDF Si8401DB Si3443DV Si8401DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 DG3000

    Untitled

    Abstract: No abstract text available
    Text: Si8401DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 MICRO FOOT Bump Side View 3 Backside V iew APPLICATIONS 2 D D S • TrenchFET Power MOSFET


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    PDF Si8401DB Si3443DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8401DB New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V –4.9 0.095 @ VGS = –2.5 V –4.1 –20 D TrenchFETr Power MOSFET D New MICRO FOOTt Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original
    PDF Si8401DB Si3443DV S-04882--Rev. 29-Oct-01

    Untitled

    Abstract: No abstract text available
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.9 0.095 @ VGS = −2.5 V −4.1 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original
    PDF Si8401DB Si3443DV Si8401DB-T1 Si8401DB-T1--E3 S-40297--Rev. 23-Feb-04

    Si8401DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si8401DB 18-Jul-08

    lipo charger

    Abstract: AS3604 battery lipo discharge universal battery charger for mobile MBR0520 Si3441 Si3441BDV Si8401DB 020C DO1608C
    Text: a u s t ri a m i c r o s y s t e m s AS3604 D a ta S h e e t M u l t i - Sta n d a r d P o w e r M a n a g e m e n t U n i t 1 General Description „ The AS3604 is a highly-integrated CMOS power management device designed specifically for portable devices


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    PDF AS3604 AS3604 lipo charger battery lipo discharge universal battery charger for mobile MBR0520 Si3441 Si3441BDV Si8401DB 020C DO1608C

    Si8401DB

    Abstract: Si8409DB
    Text: Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


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    PDF Si8409DB Si8401DB Si8409DB-T1-E1 18-Jul-08

    SMD resistors 1806

    Abstract: SMD zener diode 202 1N4148WS
    Text: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5


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    PDF HPC0201A HPC0402A HPC0402B/C HPC0603A SMD resistors 1806 SMD zener diode 202 1N4148WS

    Untitled

    Abstract: No abstract text available
    Text: Si8409DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 MICRO FOOT Bump Side View 3 Backside View APPLICATIONS 2 D D S G 4 • TrenchFET Power MOSFET


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    PDF Si8409DB Si8401DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12