S15VD 10
Abstract: No abstract text available
Text: RECTIFIER DIODES Low-frequency rectifying 3 Phase Bridge Diode Modules SVTA SVT Absolute Maximum Ratings VRM IO IFSM Type No. [V] S10VT60 80 S10VTA60 80 S15VT60 80 S15VTA60 80 S20VT60 80 S20VTA60 80 S30VT60 80 S30VTA60 80 160 D30VTA160 600 800 600 800 600
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D30VTA
S10VT60
S10VTA60
S15VT60
S15VTA60
S20VT60
S20VTA60
S30VT60
S30VTA60
D30VTA160
S15VD 10
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Untitled
Abstract: No abstract text available
Text: モジュール型 3 Phase Bridge Diode Module •外観図 OUTLINE S30VT□ Unit : mm Weight : 31g (typ.) Package:SVT 800V 30A 24 特長 36 + 品名 Type No. ロット記号(例) Date code S30VT60 90 • 小型3相ブリッジ • ファストン端子
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S30VTâ
S30VT60
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S30VT60
Abstract: No abstract text available
Text: SHINDENGEN General Purpose Rectifiers S30VT60 3 Phase Bridge Modules OUTLINE DIMENSIONS Case : SVT Unit : mm FEATURES Dual In-Line Package Compact 3 phase bridge High IFSM Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION Big Power Supply
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S30VT60
1mst10ms
S30VTx
S30VT60
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S30VT160
Abstract: No abstract text available
Text: S30VT60 – S30VT160 35A GLASS PASSIVATED THREE-PHASE BRIDGE RECTIFIER MODULE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability
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S30VT60
S30VT160
S30VT160
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S30VT60
Abstract: S30VT80
Text: モジュール型 3 Phase Bridge Diode Module •外観図 OUTLINE S30VT□ Unit : mm Weight : 31g(typ.) Package:SVT 800V 30A 24 36 ① + 品名 Type No. 特長 ロット記号(例) Date code S30VT60 90 • 小型3相ブリッジ • ファストン端子
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S30VT
S30VT60
S30VT60
S30VT80
1mst10msTj
S30VT80
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600v 30a
Abstract: S30VT60 MAX05
Text: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S30VT60 CaseCase : 2F: SVT Unit : mm 600V 30A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION ●Big Power Supply
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S30VT60
S30VTx
600v 30a
S30VT60
MAX05
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S30VT60
Abstract: S30VT80 Diode Marking ac
Text: モジュール型 3 Phase Bridge Diode Module •外観図 OUTLINE S30VT□ Unit : mm Weight : 31g (typ.) Package:SVT 800V 30A 24 特長 36 + 品名 Type No. ロット記号(例) Date code S30VT60 90 • 小型3相ブリッジ • ファストン端子
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S30VT
S30VT60
1mst10msTj
J534-1
S30VT80
Diode Marking ac
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Untitled
Abstract: No abstract text available
Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SVT Package Weight mg 45000 Product Group Type No. S30VT60 – S30VT160 S50VT60 – S50VT160 Component Material Doped Silicon* Die Attach Solder Alloy Copper Alloy Plating
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S30VT60
S30VT160
S50VT60
S50VT160
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN General Purpose Rectifiers S30VT60 3 Phase Bridge Modules OUTLINE DIMENSIONS Case : SVT Unit : mm 600V 30A FEATURES Dual In-Line Package Compact 3 phase bridge High IFSM Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION Big Power Supply
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S30VT60
S30VTx
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN General Purpose Rectifiers S30VT60 3 Phase Bridge Modules OUTLINE DIMENSIONS Case : SVT Unit : mm 600V 30A FEATURES Dual In-Line Package Compact 3 phase bridge High IFSM Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION Big power supply
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S30VT60
S30VTx
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7555-T
Abstract: M1FM3
Text: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct
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s30vta80
Abstract: No abstract text available
Text: 三相ブリッジダイオード モジュール型 3 Phase Bridge Diode Module •外形寸法図 OUTLINE DIMENSIONS Package:SVT Unit : mm Weight:31g(typ.) 24MAX S30VT□/S30VTA□ 36MAX 13.1 11.5MAX 1 10 12.5 1.5 5 9±0.5 9±0.5 9 4 800V 30A C3.7
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S30VT/S30VTA
24MAX
Weight31g
36MAX
36MAX
S10VT60
Weight30g
S30VTA60
s30vta80
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Untitled
Abstract: No abstract text available
Text: PRODUCT SELECTION GUIDE Bridge Rectifiers 1 http://www.wontop.com WON-TOP ELECTRONICS 2 Contents Introduction 4 Selector Guides 5 Bridge Rectifiers 6 SMD 6 Dual In-Line 7 Single In-Line 8 Round Type 14 Square Type 15 Three Phase 22 3 Introduction Constructed with both glass passivated die and silicon open junction die, Won-Top Electronics manufactures a
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S24LCA20
Abstract: L41C S20FND12 S48B s20lc20u S20LCA20 547B S20FND10 S20FNK02 S20FNK04
Text: - M m S20FND1Q S20FND12 S20FNK02 S20FNK04 S20FNK0B S20FNK08 S20FNK10 S20FNK12 S20FUA01 S20FUA02 S20FUA04 S20FUD01 S20FUD02 S20FÜD04 S20FUK01 S20FUK02 S20FUK04 S20LC20U S20LC40 S20LCA20 S20SC4M S20SC9M S20VT60 S20VT80 s m rm S20VTA80 S20WB20 S20WB60 S24LCA20
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S20FND10
S20FND12
S20FNK02
S20FNK04
21tkT-r/i-i-iY
S20FNK06
S20FNK08
S30VTA80
S40FFA01
S40FFA02
S24LCA20
L41C
S20FND12
S48B
s20lc20u
S20LCA20
547B
S20FND10
S20FNK04
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Untitled
Abstract: No abstract text available
Text: R e ctifie r D iodes 3 Phase Bridge Diode M odules Absolute Maximum Ratings Part No. lo V rm Conditions If s m Electrical Characteristics Tstg |R ejc max Conditions (max) (max) IF V r= V rm [V] [A] [ mA ] Vf Tj Tc [V] S10VT60 600 80 800 S10VTA60 600 80 800
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S10VT60
S10VTA60
S15VT60
S15VTA60
S20VT60
S20VTA60
S30VT60
S30VTA60
D30VTA1600
D30VTA160
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S15VTA60
Abstract: No abstract text available
Text: Rectifier Diodes L o w fre q u e n c y re c tify in g 3 P h a s e B rid g e D io de M o d u le s Absolute Maximum Ratings lo Conditions Tc If s m [V ] [A ] [•c ] [A ] 600 800 600 800 600 800 [* A ] [•c /w ] Package Fig- 1.05 3.5 I0 0.65 SVT 46 I .05 3.5
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Fig46
S10VT60
S10VTA60
S15VT60
S15VTA60
S20VT60
S20VTA60
S30VT60
S30VTA60
S30VTA160
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DIODE 1Ns4
Abstract: 1Ns4 S2VB10
Text: RECTIFIER DIODES SHINDENGEN ELECTRIC MFG 3SE J> • 021^307 000000e] T 3 Phase Bridge Diodes HB iB M fi * Ê ft Absolute Maximum Ratings ía V rm Type No. [V ] S10VT60 / [A ] Tc [• c] I0 137 600 80 800 S16VT60 600 80 800 CO o S 2 0 V T 6 0 /- [A ] 170 Tj
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000000e
S10VT60
S16VT60
S30SC3
S60SC4M
15HAX
DIODE 1Ns4
1Ns4
S2VB10
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S20LCA20
Abstract: l41c S24LCA20 s20lc20u 547B S20FND10 S20FND12 S20FNK02 S20FNK04 S20FNK06
Text: - M m S20FND1Q S20FND12 S20FNK02 S20FNK04 S20FNK0B S20FNK08 S20FNK10 S20FNK12 S20FUA01 S20FUA02 S20FUA04 S20FUD01 S20FUD02 S20FÜD04 S20FUK01 S20FUK02 S20FUK04 S20LC20U S20LC40 S20LCA20 « tt * # * * « kW (V) ') -y y 'j iS y AË V M (V) Vr V| Io (V) (V)
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S20FND10
S20FND12
S20FNK02
S20FNK04
21tkT-r/i-i-iY
S20FNK06
S20FNK08
25MAX
24MIN
S20LCA20
l41c
S24LCA20
s20lc20u
547B
S20FND10
S20FND12
S20FNK04
S20FNK06
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S15VTA60
Abstract: No abstract text available
Text: Rectifier Diodes Low frequency rectifying 3 Phase Bridge Diode Modules Absolute Maximum Ratings lo Type No. Conditions Tc . I A I . . J.rq._ S10VT60 S10VTA60 S10VT80 137 137 137 10 S10VTA80 S15VT60 S15VTA60 128 20 S20VT80 S20VTA80 128 128 121 121
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S10VT60
S10VTA60
S10VT80
S10VTA80
S15VT60
S15VTA60
S15VT80
S15VTA80
S20VT60
S20VTA60
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S24LCA20
Abstract: L41C S20LCA20 s20lc20u S30VTA80 547B S20FND10 S20FND12 S20FNK02 S20FNK04
Text: - M m « tt « S20FND1Q S20FND12 S20FNK02 S20FNK04 S20FNK0B * ' -y y # 'j iS y * V * 'y * ') & y H 'y y S20FNK08 S20FNK10 S20FNK12 S20FUA01 S20FUA02 * * * * S20FUA04 S20FUD01 S20FUD02 S20FÜD04 S20FUK01 S20FUK02 S20FUK04 S20LC20U S20LC40 S20LCA20 Vr s m kW)
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S20FND10
S20FND12
S20FNK02
S20FNK04
21tkT-r/i-i-iY
S20FNK06
S20FNK08
S40FFA12
E1471
ERE24ERE26
S24LCA20
L41C
S20LCA20
s20lc20u
S30VTA80
547B
S20FND10
S20FND12
S20FNK04
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Untitled
Abstract: No abstract text available
Text: 'E t ir j'y v V ? * * - - K 3 Phase Bridge Diode Diode Module O U T L IN E D IM E N S IO N S S30VTQ/S30VTAD 800V 30A Unit • mm i pap ^ t : A 0 r> < H & l i ' - K J g ^ d lM A X X j il . e ) V t o • S30V T A type has solid wire lead term inals. 11MAXX ^ 1 .6 )
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S30VTQ/S30VTAD
11MAXX
S30VT80
S30VTA80
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D20VT80
Abstract: D20VT60
Text: R e c t if i e r D io d e s 3 Phase Bridge Diode M odules Electrical Characteristics Absolute Maximum Ratings V rm Parts No. lo Co nd itio ns Ifsm Tj T stg max Tc [V] [A ] S10VT60 600 80 800 S10VTA60 600 80 800 S15VT60 600 80 800 S15VTA60 600 80 800 ☆ D20VT60
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S10VT60
S10VTA60
S15VT60
S15VTA60
D20VT60
D20VT60
D20VT80
S20VT60
S20VTA60
S30VT60
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Untitled
Abstract: No abstract text available
Text: SQ I PS! E m 'J y V M t- F 3 Phase Bridge Diode Square In-line Package • W IN - ä s ia OUTLINE DIMENSIONS S30VTD/S30VTAD 800V 30A RATINGS QfàfflWt'k/Ë.fâ m Absolute Maximum Ratings JfÆ<aS:vM§£- T c = 2 5 ‘C @ Item Storage Temperature H B -t Symbol Conditions
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S30VTD/S30VTAD
530VT60
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DIODE 6K
Abstract: SHINDENGEN DIODE
Text: 3 Phase Bridge Diode Diode Module S30VT S30VTA OUTLINE DIMENSIONS 800V 30A « iv •sQipyo>^-y vmsmzfUyiJ •BBJEE. HI FSM 0 ju y ffl VTA$>^y i* • I 7 3 > •F A . RATINGS • lê fc tlS ^ ïÈ fê m Absolute Maximum Ratings a. h Item Symbol m m Storage Temperature
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S30VT
S30VTA
S30VT60
S30VT80
S30VTA60
S30VTA80
S30VTD
/S30VTA
DIODE 6K
SHINDENGEN DIODE
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