Untitled
Abstract: No abstract text available
Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 940nm The QEC11X is an 940nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. ■ Chip material = GaAs ■ Package type: T-1 3 mm ■ Can be used with QSCXXX Photosensor
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QEC112,
QEC113
940nm
QEC11X
940nm
QEC113
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QEC123
Abstract: QEC121 QEC122
Text: PLASTIC INFRARED LIGHT EMITTING DIODE QEC121 QEC122 QEC123 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM 0.155 (3.94) SCHEMATIC 0.018 (0.46)
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QEC121
QEC122
QEC123
QEC12X
QSC112/113/114
DS300335
QEC123
QEC121
QEC122
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QEC112
Abstract: QEC113 QEC11X QSCXXX
Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode Features Description • ■ ■ ■ ■ ■ ■ The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. λ = 940 nm PACKAGE DIMENSIONS Chip material = GaAs Package type: T-1 3 mm
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PDF
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QEC112,
QEC113
QEC11X
QEC113
QEC112
QSCXXX
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Untitled
Abstract: No abstract text available
Text: QEC121, QEC122, QEC123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QEC121, QEC122 and QEC123 are 880nm AlGaAs LED encapsulated in a clear purple tinted, plastic T-1 package. ■ Chip material = AlGaAs ■ Package type: T-1 3mm
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QEC121,
QEC122,
QEC123
880nm
QEC122
QEC123
880nm
QSC112/QSC113/QSC114
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QEC11X
Abstract: QEC112 QEC113 QSC112
Text: PLASTIC INFRARED LIGHT EMITTING DIODE QEC112 QEC113 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM 0.155 (3.94) SCHEMATIC 0.018 (0.46) SQ. (2X)
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QEC112
QEC113
QEC11X
QSC112
DS300334
QEC112
QEC113
QSC112
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Fairchild 902
Abstract: QEC121 QEC123 QEC122
Text: QEC121, QEC122, QEC123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QEC121, QEC122 and QEC123 are 880nm AlGaAs LED encapsulated in a clear purple tinted, plastic T-1 package. ■ Chip material = AlGaAs ■ Package type: T-1 3mm
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Original
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PDF
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QEC121,
QEC122,
QEC123
880nm
QEC122
QEC123
880nm
QSC112/QSC113/QSC114
Fairchild 902
QEC121
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QSCXXX
Abstract: GaAs 850 nm Infrared Emitting Diode QEC112 QEC113 QEC11X QEC113.0059
Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 940nm The QEC11X is an 940nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. ■ Chip material = GaAs ■ Package type: T-1 3 mm ■ Can be used with QSCXXX Photosensor
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Original
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PDF
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QEC112,
QEC113
940nm
QEC11X
940nm
QEC113
QSCXXX
GaAs 850 nm Infrared Emitting Diode
QEC112
QEC113.0059
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QEC123
Abstract: QEC121 QEC122 QSC112
Text: PLASTIC INFRARED LIGHT EMITTING DIODE QEC121 QEC122 QEC123 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM 0.155 (3.94) 0.018 (0.46) SQ. (2X)
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QEC121
QEC122
QEC123
QEC12X
QSC112/113/114
DS300335
QEC123
QEC121
QEC122
QSC112
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L14LOI
Abstract: l14lti QSC11X H23LOI QSD12X QSD72X H23LOB
Text: MATCHED EMITTER/PHOTOSENSOR PAIRS Phototransistor/LED Pairs QPA1223 L14PX 96 F5DX (95) 20 mA/5V/.250” 7.5 - mA QPC1213 QSC11X (93) QEC12X (91) 20 mA/5V/.250” 5.0 - mA 30 QPD1223 QSD12X (93) QED12X (91) 20 mA/5V/.250” 10.0 - mA 30 QPD5223 QSD72X (93)
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QPA1223
QPC1213
QPD1223
QPD5223
QPE1113
H23A1
H23A2
L14PX
QSC11X
QSD12X
L14LOI
l14lti
QSC11X
H23LOI
QSD12X
QSD72X
H23LOB
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QSC11X
Abstract: No abstract text available
Text: . % oiï^mTÎÎTs PLASTIC SILICON photo transistor QSC112/113/114 PACKAGE DIMENSIONS DESCRIPTION Th e QSC11X is a silicon phototransistor en capsulated in an infrared transparent, black T-1 package. FEATURES • Tight production distribution. ■ Steel lead fram es for im proved reliability in solder
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OCR Scan
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QSC112/113/114
QSC11X
ST2142
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Untitled
Abstract: No abstract text available
Text: CîXJ PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSC112/113/114 .126 3.20 .106(2.69) — _L L -EMITTER .042 (1.07) J ±.010 (±.25) t .800 (20.3) MIN I I f -COLLECTOR / .050 (1.27)'J REF I II r .203(5.16) .183(4.65) 0.30 (0.76) NOM The QSC11X is a silicon phototransistor encapsulated in
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QSC112/113/114
QSC11X
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C11351
Abstract: No abstract text available
Text: ] • PLASTIC SILICON PHOTOTRANSISTOR optoelectronics QSC112/113/114 DESCRIPTION PACKAGE DIMENSIONS The QSC11X is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package. FEATURES Tight production distribution. Steel lead frames for improved reliability in solder
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OCR Scan
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QSC112/113/114
QSC11X
mW/cm21
C11351
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QEC121
Abstract: No abstract text available
Text: EU AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC121/122 126 3.20 REFERENCE SURFACE T h e Q EC 12X is an 8 8 0 nm AIG aA s LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES Tight production Ee distribution. Steel lead fram es for im proved reliability in solder
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OCR Scan
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PDF
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QEC121/122
QSC11X
ST2131
QEC122
74bbfl51
QEC121
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Untitled
Abstract: No abstract text available
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 PACKAGE DIMENSIONS DESCRIPTION .126 3.20 .106 (2.69) REFERENCE SURFACE r .203 (5.16) .183(4.65) .030 (0.76) NOM _L .042 (1.07) X ±.010 (±.25) CATHODE t .800 (20.3) MIN 1 I .050 (1.27) REF I The QEC11X is a 940 nm GaAs LED encapsulated in a
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QEC112/113
QEC11X
QSC11X
000L270
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H23LOI
Abstract: H23LOB L14LOI
Text: EO OPTOELECTRONICS MATCHED EMITTER/PHOTOSENSOR PAIRS Sensor LED Test F a m ily F am ily C o n d itio n s p a g e # I p a g e #) Part Num ber B V ceo (V ) 'C(ON) i f/ v c e / d m in m ax un its m in Phototransistor/LED Pairs QPA1223 L14PX (96) F5DX (95)
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QPA1223
QPC1213
QPD1223
QPD5223
QPE1113
H23A1
H23A2
L14PX
QSC11X
QSD12X
H23LOI
H23LOB
L14LOI
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QED122
Abstract: QEC121 QEC122 QED121 QED123 diode 465 nm 5 mm tinted radiant energy
Text: r*T | m m É éiìwiììbA ^ S ü J H i OPTOELECTRONICS AIGaAs INFRARED EMITTING DIODE QEC121/122 PACKAGE DIMENSIONS DESCRIPTION The QEC12X is an 880 nm AIGaAs LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES • Tight production Eedistribution.
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QEC121/122
ST2131
QEC12X
QSC11X
QED123
mW/10Â
mA1671
QED122
QEC121
QEC122
QED121
diode 465 nm 5 mm tinted
radiant energy
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QSC112
Abstract: QSC113 QSC114
Text: [•9 PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSC112/113/114 DESCRIPTION PACKAGE DIMENSIONS .126 3.20 .106 (2.69) REFERENCE SURFACE. L -EMITTER t J \ FEATURES Tight production distribution. Steel lead fram es for im proved reliability in solder mounting.
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QSC112/113/114
QSC11X
QSC113
QSC114
100ft
QSC112
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ST2130
Abstract: QSC113 QEC11X QSC112 diode 465 nm 5 mm tinted
Text: fey GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS .126 3.20 .106 (2.69) R EFER EN C E SU RFACE Th e QEC11X is a 94 0 nm GaAs LED encapsulated in a clear, peach tinted, plastic T-1 package. r .203 (5.16) .183 (4.65)
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QEC112/113
ST2130
QEC11X
QSC11X
mA167'
QSC113
mW/10Â
mA1671
ST2130
QSC112
diode 465 nm 5 mm tinted
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H23LOB
Abstract: No abstract text available
Text: OPTOELECTRONICS P a rt N u m b e r!2 MATCHED EMITTER/PHOTOSENSOR PAIRS Sensor F a m ily Test C o n d itio n s LED F a m ily B V ceo u n its V ) m in mA 30 lc (O N ) I f /V c e <D(1) m in m ax Phototransistor/LED Pairs QPA1223 L14PX F5DX 20 mA/5V/.250”
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OCR Scan
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QPA1223
QPC1213
QPD1223
QPD5223
QPE1113
H23A1
H23A2
L14PX
QSC11X
QSD12X
H23LOB
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QEC121
Abstract: No abstract text available
Text: ü A IGaA s INFRARED EMITTING DIODE OPTOELECTRONICS QEC121/122 DESCRIPTION PACKAGE DIMENSIONS I REFERENCE SURFACE .126 3.20 .106(2.69) The QEC12X is an 880 nm AIGaAs LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES J .042(1.07) ±0 1 0 (± 2 5 )
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QEC121/122
QEC12X
QSC11X
QEC121
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Untitled
Abstract: No abstract text available
Text: E Q GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS .126 3 20 .106 (2.69) R EFER EN C E SU RFACE r .203 (5.16) 183(4.65) .030 (0.76) NOM J .0 4 2 (1 .0 7 ) ± 010 (± 25) I .8 0 0 (2 0 .3 ) MIN * 1 The QEC11X is a 940 nm GaAs LED encapsulated in a
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QEC112/113
QEC11X
QSC11X
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ST2130
Abstract: No abstract text available
Text: [*ö GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS 126 3.20 REFERENCE SURFACE 203 (5.16) 183(4.65) CATHODE J .042(1.07) ±.010 (±.25) .050 (1.27) REF t .800 (20.3) MIN >/ * * -ANODE J .018(0.46) SQ ±.003 (±0.08)'
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QEC112/113
QEC11X
QSC11X
ST2130
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