Q67050-T7
Abstract: No abstract text available
Text: BSS 169 Preliminary data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin 1 Pin 2 G Pin 3 S D Type VDS ID RDS on Package Ordering Code BSS 169 100 V 0.12 A 12 Ω SOT-23 Q67050-T7 Maximum Ratings Parameter
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OT-23
Q67050-T7
May-30-1996
Q67050-T7
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Untitled
Abstract: No abstract text available
Text: BSM 200 GB 60 DN2 IGBT Power Module Target data sheet • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GB 60 DN2 600V 235A HALF-BRIDGE 1 Q67050-A1004-A70 Maximum Ratings
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Q67050-A1004-A70
Oct-27-1997
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igbt module bsm 200 gb 120 dl
Abstract: igbt module bsm 100 gb 60 dl
Text: BSM 100 GB 60 DL IGBT Power Module Preliminary data • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GB 60 DL 600V 125A HALF BRIDGE 1 Q67050-A1002-A70
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Q67050-A1002-A70
Oct-27-1997
igbt module bsm 200 gb 120 dl
igbt module bsm 100 gb 60 dl
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igbt module bsm 100 gb 60 dl
Abstract: No abstract text available
Text: BSM 75 GB 60 DL IGBT Power Module Target data sheet • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 75 GB 60 DL 600V 100A HALF BRIDGE 1 Q67050-A1001-A70
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Q67050-A1001-A70
Oct-27-1997
igbt module bsm 100 gb 60 dl
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igbt module bsm 100 gb 60 dl
Abstract: No abstract text available
Text: BSM 50 GB 60 DL IGBT Power Module Preliminary data • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GB 60 DL 600V 65A HALF-BRIDGE 1 Q67050-A1000-A70
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Q67050-A1000-A70
Oct-23-1997
igbt module bsm 100 gb 60 dl
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Q67050-T6
Abstract: RGs sot23
Text: BSS 159 Preliminary data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin 1 Pin 2 G Pin 3 S D Type VDS ID RDS on Package Ordering Code BSS 159 50 V 0.16 A 8Ω SOT-23 Q67050-T6 Maximum Ratings Parameter Symbol
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OT-23
Q67050-T6
May-30-1996
Q67050-T6
RGs sot23
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Untitled
Abstract: No abstract text available
Text: BSM 300 GA 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 300 GA 120 DL 1200V 550A IC Package Ordering Code SINGLE SWITCH 1 Q67050-S1004-A70
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Q67050-S1004-A70
Oct-17-1997
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SIPC69N60C2
Abstract: No abstract text available
Text: Preliminary SIPC69N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC69N60C2
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SIPC69N60C2
Q67050A4073-A001
5443-N,
SIPC69N60C2
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4344
Abstract: SIDC06D60F
Text: Preliminary SIDC06D60F Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC06D60F 600V ICn 15A A This chip is used for:
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SIDC06D60F
Q67050-A4038A001
4344E,
4344
SIDC06D60F
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SIDC03D120H
Abstract: 4372H
Text: Preliminary SIDC03D120H Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC03D120H 1200V ICn 4A A This chip is used for:
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SIDC03D120H
85mm2
Q67050-A4111A001
4372H,
SIDC03D120H
4372H
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SDT08S60
Abstract: SIDC24D60SIC3 DSA0037454
Text: SIDC24D60SIC3 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery
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SIDC24D60SIC3
Q67050-A4281A101
SDT08S60
SIDC24D60SIC3
DSA0037454
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SIPC26N60C2
Abstract: No abstract text available
Text: Preliminary SIPC26N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC26N60C2
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SIPC26N60C2
Q67050A4087-A001
5433N,
SIPC26N60C2
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SIPC10N60S5
Abstract: No abstract text available
Text: Preliminary SIPC10N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60S5
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SIPC10N60S5
Q67050A4072-A001
5353-N,
SIPC10N60S5
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SIPC10N60C2
Abstract: No abstract text available
Text: Preliminary SIPC10N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60C2
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SIPC10N60C2
Q67050A4090-A001
5353P,
SIPC10N60C2
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Emcon
Abstract: SIDC78D170H
Text: SIDC78D170H Fast switching diode chip in EMCON 3 -Technology FEATURES: • 1700V EMCON 3 technology 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC78D170H 1700V 150A This chip is used for:
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SIDC78D170H
Q67050-A4177A001
Emcon
SIDC78D170H
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SIDC161D170H
Abstract: No abstract text available
Text: SIDC161D170H Fast switching diode chip in EMCON 3 -Technology FEATURES: • 1700V EMCON 3 technology 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC161D170H 1700V 300A A This chip is used for:
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SIDC161D170H
Q67050-A4180A001
SIDC161D170H
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SIGC20T120
Abstract: No abstract text available
Text: SIGC20T120 3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC20T120 VCE ICn 1200V 15A This chip is used for: • power module
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SIGC20T120
Q67050A4103-A001
L7631A,
SIGC20T120
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SIDC07D60F6
Abstract: No abstract text available
Text: Preliminary SIDC07D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC07D60F6 600V 22.5A A This chip is used for:
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SIDC07D60F6
Q67050-A4039A001
4364M,
SIDC07D60F6
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diode Vr 1200v
Abstract: a4100 Q67050-A4100 SIDC53D120H6
Text: Preliminary SIDC53D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC53D120H6 1200V 100A A This chip is used for:
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SIDC53D120H6
Q67050-A4100
4392S,
diode Vr 1200v
a4100
Q67050-A4100
SIDC53D120H6
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E6327
Abstract: smart SIPMOS Q67000-S271 SIPMOS E3128A siemens sot223 BTS630 Q67000-S227 Q67000-S311 PROFET
Text: Smart Power Switches One Channel High Side Switches Channel Mini PROFET Smart SI PMOS® Technology Juso A. (lim) min A A Bestellnummer Ordering Code Gehäuse Package Bild Figure 5000 0.07 0.2 Q67000-S227 S OT223-4-1/3-1 5000 0.07 0.2 Q67050-M1 SOT223-4-1/3-1
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350-E6327
Q67000-S227
OT223-4-1/3-1
365-E6327
Q67050-M1
450-E6327
Q6700-S266
452-E6327
E6327
smart SIPMOS
Q67000-S271
SIPMOS
E3128A
siemens sot223
BTS630
Q67000-S311
PROFET
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Untitled
Abstract: No abstract text available
Text: euoec BSM 75 GB 60 DL F IGBT Power Module Target data sheet • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE BSM 75 GB 60 DL 600V 100A Package Ordering Code HALF BRIDGE 1 Q67050-A1001-A70
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Oct-27-1997
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Siemens MTT 40 A 12 N
Abstract: No abstract text available
Text: SIEMENS BSP 300 SIPMOS Small-Signal Transistor • N channel • Enhancement mode Type BSP 300 ^DS 800 V Type BSP 300 Ordering Code Q67050 -T0009 0.19 A Package ñ DS on 20 a Marking SOT-223 Tape and Reel Information Maximum Ratings Values Parameter Symbol
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Q67050
-T0009
OT-223
235bDS
535b05
Siemens MTT 40 A 12 N
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vqe 24 e
Abstract: vqe 24 d
Text: euoec BSM 50 GB 60 DL F IGBT Power Module Prelim inary data • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE BSM 50 GB 60 DL 600V 65A Package O rdering Code HALF-BRIDGE 1 Q67050-A1000-A70
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OCR Scan
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Oct-23-1997
vqe 24 e
vqe 24 d
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BSP 300
Abstract: No abstract text available
Text: SIEMENS BSP 300 SIPMOS Small-Signal Transistor • N channel • Enhancement mode Type BSP 300 V'bs 800 V Type BSP 300 Ordering Code Q67050 -T0009 0.19 A ^DS on Package 20 Q SOT-223 Marking Tape and Reel Information Maximum Ratings Parameter Symbol Drain source voltage
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OT-223
Q67050
-T0009
OT-223
BSP 300
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