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    PD914 Search Results

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    Central Semiconductor Corp CMPD914-TR-PBFREE

    DIODE GEN PURP 75V 250MA SOT23
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    DigiKey CMPD914-TR-PBFREE Reel 87,000 3,000
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    Central Semiconductor Corp CMPD914E-TR-PBFREE

    DIODE GEN PURP 75V 250MA SOT23
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    DigiKey CMPD914E-TR-PBFREE Digi-Reel 21,980 1
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    CMPD914E-TR-PBFREE Cut Tape 21,980 1
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    CMPD914E-TR-PBFREE Reel 18,000 3,000
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    Jonard Tools EPD-914

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    DigiKey EPD-914 Bulk 6 1
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    Mouser Electronics EPD-914 6
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    RS EPD-914 Bulk 1
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    Jonard Tools EPD-91466

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    DigiKey EPD-91466 Bulk 5 1
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    Mouser Electronics EPD-91466
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    Newark EPD-91466 Bulk 10
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    RS EPD-91466 Bulk 7
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    Jonard Tools EPD-914KR

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    DigiKey EPD-914KR Bulk 1 1
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    Mouser Electronics EPD-914KR
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    Newark EPD-914KR Bulk 10
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    RS EPD-914KR Bulk 1
    • 1 $43.39
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    PD914 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PD914 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF

    PD914 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual V850E/RS1TM 32-/16-bit Single-Chip Microcontroller with CAN Interface Hardware µPD70F3402, µPD70F3403, µPD70F3403A Document No. U16702EE3V2UD00 Date Published April 2006 NEC Electronics Corporation 2006 Printed in Germany NOTES FOR CMOS DEVICES


    Original
    PDF V850E/RS1TM 32-/16-bit PD70F3402, PD70F3403, PD70F3403A U16702EE3V2UD00 MI852-2886-9022/9044

    IRFP3710

    Abstract: IRF3710 4.5V TO 100V INPUT REGULATOR
    Text: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier


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    PDF PD-91490C IRFP3710 O-247 IRFP3710 IRF3710 4.5V TO 100V INPUT REGULATOR

    Untitled

    Abstract: No abstract text available
    Text: PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    PDF PD-91449C IRG4BC20UD 200kHz O-220AB

    IRFP3710

    Abstract: IRF3710 4.5V TO 100V INPUT REGULATOR
    Text: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier


    Original
    PDF PD-91490C IRFP3710 O-247 IRFP3710 IRF3710 4.5V TO 100V INPUT REGULATOR

    PA09 8 PIN TO-3 PACKAGE DIMENSIONS

    Abstract: cs486 upd70f3403a V850 fg2 p521 gr INTR10
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    IRHY9230CM

    Abstract: IRHY93230CM JANSF2N7383 JANSR2N7383
    Text: PD-91401 IRHY9230CM JANSR2N7383 200V, P-CHANNEL REF: MIL-PRF-19500/615 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHY9230CM 100K Rads (Si) IRHY93230CM 300K Rads (Si) RDS(on)


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    PDF PD-91401 IRHY9230CM JANSR2N7383 MIL-PRF-19500/615 O-257AA) IRHY9230CM IRHY93230CM JANSF2N7383 O-257AA JANSF2N7383 JANSR2N7383

    IRFP3710

    Abstract: irf 460A TO-247AC Package IRF3710 4.5V TO 100V INPUT REGULATOR
    Text: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier


    Original
    PDF PD-91490C IRFP3710 O-247 IRFP3710 irf 460A TO-247AC Package IRF3710 4.5V TO 100V INPUT REGULATOR

    Untitled

    Abstract: No abstract text available
    Text: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier


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    PDF PD-91490C IRFP3710 O-247

    Untitled

    Abstract: No abstract text available
    Text: PD-91416E RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7064 JANSR2N7431U 60V, N-CHANNEL REF: MIL-PRF-19500/664 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA7064 100K Rads (Si) IRHNA3064 300K Rads (Si) IRHNA4064


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    PDF PD-91416E IRHNA7064 JANSR2N7431U MIL-PRF-19500/664 IRHNA3064 IRHNA4064 IRHNA8064 1000K

    JANSR2N7425

    Abstract: IRHM9160 IRHM93160 JANSF2N7425 35AA L082
    Text: PD-91415G IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω


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    PDF PD-91415G IRHM9160 JANSR2N7425 MIL-PRF-19500/660 O-254AA) IRHM93160 JANSF2N7425 O-254AA. JANSR2N7425 IRHM9160 IRHM93160 JANSF2N7425 35AA L082

    IRG4BC20UD equivalent

    Abstract: IRG4BC20UD PD-91449C
    Text: PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    PDF PD-91449C IRG4BC20UD 200kHz O-220AB IRG4BC20UD equivalent IRG4BC20UD PD-91449C

    Untitled

    Abstract: No abstract text available
    Text: PD-91415G IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω


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    PDF PD-91415G IRHM9160 JANSR2N7425 MIL-PRF-19500/660 O-254AA) IRHM93160 JANSF2N7425 O-254AA.

    70F34

    Abstract: PD911 transistor 2.048 MT1 seven segmen cec p77 transistor cs312 FP4 material NEC 03F PA09 8 PIN TO-3 PACKAGE DIMENSIONS PD912
    Text: Preliminary User’s Manual V850E/RS1TM 32-/16-bit Single-Chip Microcontroller with CAN Interface Hardware µPD70F3402, µPD70F3403 Document No. U16702EE1V0UD00 Date Published January 2005  NEC Corporation 2005 Printed in Germany NOTES FOR CMOS DEVICES


    Original
    PDF V850E/RS1TM 32-/16-bit PD70F3402, PD70F3403 U16702EE1V0UD00 70F34 PD911 transistor 2.048 MT1 seven segmen cec p77 transistor cs312 FP4 material NEC 03F PA09 8 PIN TO-3 PACKAGE DIMENSIONS PD912

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual V850E/RS1TM 32-/16-bit Single-Chip Microcontroller with CAN Interface Hardware µPD70F3402, µPD70F3403, µPD70F3403A Document No. U16702EE3V1UD00 Date Published February 2006  NEC Electronics Corporation 2006 Printed in Germany NOTES FOR CMOS DEVICES


    Original
    PDF V850E/RS1TM 32-/16-bit PD70F3402, PD70F3403, PD70F3403A U16702EE3V1UD00 VIH852-2886-9022/9044

    Untitled

    Abstract: No abstract text available
    Text: PD-91401 IRHY9230CM JANSR2N7383 200V, P-CHANNEL REF: MIL-PRF-19500/615 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHY9230CM 100K Rads (Si) IRHY93230CM 300K Rads (Si) RDS(on)


    Original
    PDF PD-91401 IRHY9230CM JANSR2N7383 MIL-PRF-19500/615 O-257AA) IRHY9230CM IRHY93230CM JANSF2N7383 O-257AA

    Js SMD MARKING CODE SOT23

    Abstract: SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm
    Text: SMD Switching Diodes TYPE NO. CA SE DESCRIPTION BAS28 BAS56 C L L 914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CM PD914 C M P D IO O I C M P D IO O I A SO T -143 SO T -143 S O D -8 O SO D -8O S O D -8O S O D -8 O S O D -8 O SOT-23 SOT-23 SOT-23 C M P D IO O IS CM P02003


    OCR Scan
    PDF BAS28 BAS56 CLL914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A Js SMD MARKING CODE SOT23 SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm

    SMD diode C5C

    Abstract: smd diode A82 SMD diode Ca6 SMD diode CA2 dual diode 1N4148 SMD smd diode 1N4148 sot23 1N4148 diode SOD 80 1n4148 smd diode 1N4148 diode SMD type smd diode marking code L51
    Text: SMD Switching Diodes TYPE NO. CASE DESCRIPTION BAS28 BAS 56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CM PD914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-8O SOD-80 SOD-8O SOD-8O SOD-8O SOT-23 SOT-23 SOT-23 CMPD1001S CMPD20Û3 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23


    OCR Scan
    PDF BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A SMD diode C5C smd diode A82 SMD diode Ca6 SMD diode CA2 dual diode 1N4148 SMD smd diode 1N4148 sot23 1N4148 diode SOD 80 1n4148 smd diode 1N4148 diode SMD type smd diode marking code L51

    marking K2 diode

    Abstract: MARKING 5D DIODE schottky diode marking A7
    Text: DIODE wffife SOT-23/TO-236AB ‘TM PD ’ GENERAL-PURPOSE a n d LOW-LEAKAGE D IO D ES ELECTRICAL CHARACTERISTICS a t T . = 25°C vF Description *rr Max. Max. nA (ns) <PF) 1 ,2 ,3 10 25 4.0 6.0 ANCK VBR Min. Max. Marking (mA) (V) (V) @IF (mA) 1.0 Device Type


    OCR Scan
    PDF OT-23/TO-236AB TMPD914 TMPD2836 TMPD2838 TMPD4148 TMPD6050 TMPD7000 A8920SLR) BAV70 BAV99 marking K2 diode MARKING 5D DIODE schottky diode marking A7

    T3D DIODE

    Abstract: T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35
    Text: S P RAG UE /S EM IC ON D GROUP 8 5 14019 SPRAGUE, D • S E M I C O N D S / ICS 0513550 0003b27 S 93 D 0 3 6 2 7 SMALL-OUTLINE DIODES i ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type »rr Max. ns


    OCR Scan
    PDF 0003b27 TMPD459 TMPD914 TMPD2835 TMPD2836 TMPD2837 TMPD2838 TMPD4148 TMPD4150 TMPD4153 T3D DIODE T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35

    BC5508

    Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
    Text: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes


    OCR Scan
    PDF OT-23 350mW CMPTB099 CMPT2222A trK1000V) CMPS5064 OT-23 OT-89 CQ89D CQ89M BC5508 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw

    Untitled

    Abstract: No abstract text available
    Text: PD-91477D International IÖR Rectifier IRF3415 HEXFET Power MOSFET • • • • • Advanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 150 V R ü S o n = 0 . 0 4 2 Î 2


    OCR Scan
    PDF PD-91477D IRF3415 O-220

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan
    PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


    OCR Scan
    PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor