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    NE85630 Price and Stock

    California Eastern Laboratories (CEL) NE85630-A

    RF TRANS NPN 12V 4.5GHZ SOT323
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    California Eastern Laboratories (CEL) NE85630-T1

    RF TRANS NPN 12V 4.5GHZ SOT323
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    California Eastern Laboratories (CEL) NE85630-T1-A

    RF TRANS NPN 12V 4.5GHZ SOT323
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    NE85630-T1-A Digi-Reel 1
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    California Eastern Laboratories (CEL) NE85630-R24-A

    RF TRANS NPN 12V 4.5GHZ SOT323
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    California Eastern Laboratories (CEL) NE85630-R25-A

    RF TRANS NPN 12V 4.5GHZ SOT323
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    NE85630 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE85630 NEC Semiconductor Selection Guide Original PDF
    NE85630 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE85630 Unknown Scan PDF
    NE85630 NEC Super Minihold Transistors Scan PDF
    NE85630-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-323 Original PDF
    NE85630-R24-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-323 Original PDF
    NE85630-R25-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-323 Original PDF
    NE85630-T1 California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 1GHZ SOT-323 Original PDF
    NE85630-T1 NEC NPN silicon high frequency transistor. Original PDF
    NE85630-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE85630-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-323 Original PDF
    NE85630-T1-R24-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-323 Original PDF
    NE85630-T1-R25-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-323 Original PDF

    NE85630 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ne85630

    Abstract: 32E-16
    Text: NONLINEAR MODEL SCHEMATIC NE85630 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 6e-16 MJC 0.55 time seconds BF 120 XCJC 0.3 capacitance farads


    Original     		PDF NE85630 6e-16 32e-16 96e-4 8e-12 1e-12 10e-12 NE85630 09e-12 16e-12

    Untitled

    Abstract: No abstract text available
    Text: NE85630 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10


    Original     		PDF NE85630

    transistor 433 Mhz

    Abstract: UPC8116GR "Bipolar Transistor" uPC8116 Low Noise uhf transistor 1817 transistor 315MHZ SAW rf 433mhz NE696M01 NE85630
    Text: Keyless Entry, Home Security, UHF Remote NEW! NE85630 Bipolar Transistor UPC8116GR IF Receiver IC • Low cost: 16¢ in production quantities • 15dB Gain @ 450MHz • 1.0dB Noise Figure @ 450MHz • Miniature 1.25 X 2.0mm package 315 MHz 433 MHz • 100 – 500MHz Broadband Operation


    Original     		PDF NE85630 UPC8116GR 450MHz 500MHz -100dBm NE696M01 UPB1004GS UPC2746TB OT-363 transistor 433 Mhz UPC8116GR "Bipolar Transistor" uPC8116 Low Noise uhf transistor 1817 transistor 315MHZ SAW rf 433mhz NE696M01

    2SC4226-T1

    Abstract: 2SC4226-T1-A ne85630 NE85630-A 2SC4226T1a transistor s2p Transistor R25 NE85630A 2SC4226-A r23 transistor
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary NE85630 / 2SC4226 Data Sheet R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor


    Original     		PDF NE85630 2SC4226 R09DS0022EJ0200 2SC4226 S21e2 SC-70) 2SC4226-T1 2SC4226-T1-A NE85630-A 2SC4226T1a transistor s2p Transistor R25 NE85630A 2SC4226-A r23 transistor

    UPA831TF

    Abstract: NE681 NE68130 NE856 NE85630 S21E UPA831TF-T1 UPA834TF 7371 802 transistor on 4409
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA 2.1 ± 0.1 1.25 ± 0.1 HIGH GAIN: Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA •


    Original     		PDF NE856, NE681) UPA831TF UPA831TF UPA831TF-T1 NE85630 NE68130 UPA834TF 24-Hour NE681 NE68130 NE856 NE85630 S21E UPA831TF-T1 7371 802 transistor on 4409

    OF IC 7912

    Abstract: pt 9795 on 5295 transistor nec 14312 transistor UPA831TF lb 11885 NE681 NE68130 NE856 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Package Outline TS06 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA


    Original     		PDF UPA834TF NE681, NE856) UPA834TF NE68130 UPA834TF-T1 NE85630 UPA831TF 24-Hour OF IC 7912 pt 9795 on 5295 transistor nec 14312 transistor lb 11885 NE681 NE68130 NE856 S21E

    LB 122 transistor To-92

    Abstract: NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)


    Original     		PDF NE856 NE85600 24-Hour LB 122 transistor To-92 NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    transistor NEC D 882 p

    Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A
    Text: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP


    Original     		PDF NE856 transistor NEC D 882 p transistor c 1349 Transistor BF 479 NE85630-T1-A

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    NE5510279A

    Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
    Text: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is


    Original     		PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    transistor d 13009

    Abstract: 9622 transistor t 3866 power transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA832TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA


    OCR Scan     		PDF UPA832TF NE856, NE685) UPA832TF NE85630 NE68530 UPA835TF UPA832TF-T1 24-Hour transistor d 13009 9622 transistor t 3866 power transistor

    CD 5888 CB

    Abstract: transistor BU 5027 CD 5888 ic cd 5220 buffer ic transistor d 13009 UPA831TF CD 5888 cb ic cd 4847 pa831
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TF FEATURES Units in mm OUTLINE DIMENSIONS LOW NOISE: Package Outline TS06 Q1:NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA831TF NE856, NE681) PA831TF NE85630 NE68130 UPA831TF-T1 UPA834TF CD 5888 CB transistor BU 5027 CD 5888 ic cd 5220 buffer ic transistor d 13009 UPA831TF CD 5888 cb ic cd 4847 pa831

    transistor NEC D 882

    Abstract: 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST DESCRIPTION


    OCR Scan     		PDF NE856 24-Hour transistor NEC D 882 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55

    NE68018

    Abstract: No abstract text available
    Text: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10


    OCR Scan     		PDF OT-23) NE68018

    2SC3357

    Abstract: 2sc3355 NE8563S
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • LOW COST 00 CHIP 35 (MICRO-X) DESCRIPTION f The NE856 series of NPN epitaxial silicon transistors is


    OCR Scan     		PDF NE856 OT-89) 2SC3357 2sc3355 NE8563S

    NE8563S

    Abstract: 2SC 2625 transistor 321 CJ 7121 SL 0380 R E8560 ic SL 1626 NE85634-F ic 7442 2sc 1027 transistor transistor 2SC 1222
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: iT = 7 G H z • LOW NOISE FIGURE: 1.1 dB at 1 G H z • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 C H IP • LOW COST


    OCR Scan     		PDF NE856 NE8563S 2SC 2625 transistor 321 CJ 7121 SL 0380 R E8560 ic SL 1626 NE85634-F ic 7442 2sc 1027 transistor transistor 2SC 1222