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    NXP Semiconductors MRF8S9100HR3

    RF MOSFET LDMOS 28V NI780
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    NXP Semiconductors MRF8S9100HR5

    RF MOSFET LDMOS 28V NI780
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    Verical MRF8S9100HR5 28 1
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    NXP Semiconductors MRF8S9100HSR5

    RF MOSFET LDMOS 28V NI780
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    NXP Semiconductors MRF8S9100HSR3

    RF MOSFET LDMOS 28V NI780
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    Rochester Electronics LLC MRF8S9100HSR3

    RF MOSFET LDMOS 28V NI780
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    DigiKey MRF8S9100HSR3 Bulk 5
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    MRF8S9100H Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF8S9100HR3 Freescale Semiconductor HV8 900MHZ 100W NI780H Original PDF
    MRF8S9100HR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 100W NI-780 Original PDF
    MRF8S9100HSR3 Freescale Semiconductor HV8 900MHZ 100W NI780HS Original PDF
    MRF8S9100HSR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 100W NI-780S Original PDF

    MRF8S9100H Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		PDF MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3

    J307

    Abstract: ATC100B200JT500X ATC100B200 AN1955 C101 JESD22 MRF8S9100HR3 MRF8S9100HSR3 A114 A115
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		PDF MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 J307 ATC100B200JT500X ATC100B200 AN1955 C101 JESD22 MRF8S9100HSR3 A114 A115

    J307

    Abstract: J249 AD255A AN1955 MRF8S9100HR3 MRF8S9100HSR3 J032 ATC100B200JT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		PDF MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 J307 J249 AD255A AN1955 MRF8S9100HSR3 J032 ATC100B200JT500XT

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


    Original     		PDF