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    Untitled

    Abstract: No abstract text available
    Text: M30L0T8000T2 M30L0T8000B2 256 Mbit 16 Mb x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M30L0T8000T2 M30L0T8000B2

    M36L0T8060

    Abstract: flash E2p M69KW096B
    Text: M36L0T8060T1 M36L0T8060B1 256 Mbit 16 Mb x16, multiple bank, multilevel, burst Flash memory and 64 Mbit PSRAM, 1.8 V core, 3 V I/O supply, multichip package Features Multichip package • 1 die of 256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory


    Original     		PDF M36L0T8060T1 M36L0T8060B1 M36L0T8060T1: 880Dh M36L0T8060B1: 880Eh TFBGA88 M36L0T8060 flash E2p M69KW096B