Untitled
Abstract: No abstract text available
Text: KMM374S1623BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.
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KMM374S1623BT
PC100
118DIA
000DIA
150Max
81Max)
010Max
KM48S8030BT
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KMM374S1623BT-G8
Abstract: KMM374S1623BT-GH KMM374S1623BT-GL
Text: KMM374S1623BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.
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KMM374S1623BT
PC100
100MHz
100MHz
KMM374S1623BT-G8
KMM374S1623BT-GH
KMM374S1623BT-GL
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KM48S8030BT-G10
Abstract: KMM374S1623BTL-G0
Text: KMM374S1623BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM374S1623BTL
200mV.
66MHz
KM48S8030BT-G10
KMM374S1623BTL-G0
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Untitled
Abstract: No abstract text available
Text: PC66 SDRAM MODULE KMM374S1623BTL Revision History Revision .3 March 1998 Som e Param eter value s & C haracteristics of com p, level are changed as below : - Input leakage currents (Inputs) : ± 5 u A to ±1uA. - Input leakage currents (I/O) : ± 5 u A to ± 1 ,5uA.
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KMM374S1623BTL
KM48S8030BT
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Untitled
Abstract: No abstract text available
Text: Preliminary PC100 SDRAM MODULE KMM374S1623BT KMM374S1623BT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 374S 1623BT is a 16M bit x 72 Synchronous • Perform ance range
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PC100
KMM374S1623BT
KMM374S1623BT
16Mx72
1623BT
374S1623BT-G
125MHz
374S1623BT-GH
100MHz
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374S1623BTL
Abstract: No abstract text available
Text: Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL_ Revision History Revision .l November 1997 This spec has changed in accordance with New Binning [s F ' ELECTROftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL KMM374S1623BTL SDRAM DIMM
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KMM374S1623BTL_
KMM374S1623BTL
KMM374S1623BTL
16Mx72
374S1623BTL
1623BTL
400mil
168-pin
48S8030BT
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KMM374S1623BTL
Abstract: KMM374S1623BTL-G0
Text: KMM374S1623BTL PC66 SDRAM MODULE KMM374S1623BTL SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1623BTL is a 16M bit x 72 Synchro nous Dynamic RAM high density memory module. The Samsung
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KMM374S1623BTL
KMM374S1623BTL
16Mx72
400mil
168-pin
KMM374S1B23BTL
KMM374S1623BTL-G0
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Untitled
Abstract: No abstract text available
Text: Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL_ Revision History Revision ,l November 1997 This spec has changed in accordance with New Binning - ELECTRONICS 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM374S1623BTL KMM374S1623BTL SDRAM DIMM
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KMM374S1623BTL_
KMM374S1623BTL
KMM374S1623BTL
16Mx72
374S1623BTL
1623BTL
374S1623BTL-G
125MHz
400mQM
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KMM374S1623BT-GL
Abstract: KMM374S1623BT-G8 KMM374S1623BT-GH
Text: Preliminary PC100 SDRAM MODULE KMM374S1623BT KM M 374S1623BT SDRAM DIMM 16M x72 SDRAM DIMM w ith ECC based on 8M x8, 4Banks, 4K Refresh, 3.3V S ynchronous D R AM s with SPD FEATURE G ENERAL DESCRIPTION T h e S a m s u n g K M M 3 7 4 S 1 6 2 3 B T is a 16M bit x 7 2 S y n c h ro n o u s
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KMM374S1623BT
KMM374S1623BT
PC100
KMM374S1623BT-GL
KMM374S1623BT-G8
KMM374S1623BT-GH
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KMM374S1623BT-GL
Abstract: No abstract text available
Text: KMM374S1623BT PC100 SDRAM MODULE KMM374S1623BT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1623BT is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM374S1623BT
KMM374S1623BT
PC100
16Mx72
400mil
168-pin
KMM374S1623BT-GL
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Untitled
Abstract: No abstract text available
Text: PC100 SDRAM MODULE KMM374S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : + 5 u A to ± 1 u A , - Cin to be measured at V dd I il (DQ) : + 5 u A to ± 1.5uA. = 3.3V, T a = 23°C , f = 1 MHz, V
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KMM374S1623BT
PC100
150Max
KM48S8030BT
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Untitled
Abstract: No abstract text available
Text: KMM374S1 623BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V
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KMM374S1
623BT
PC100
KMM374S1
150Max
KM48S8030BT
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KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
1Mx16
KM44S16020BT
KM48S8020BT
KM416S4020BT
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4Mx64
KMM366S424BTL-G0
KMM466S824BT2F0
KMM466S424BT-F0
KMM466S824BT2-F0
4MX16
16MX8
KM44S4020CT
KM48S2020CT
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