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KM424C256Z Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100	OCR Scan	PDF	KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
KM424C256Z Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8" Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J	OCR Scan	PDF	KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
KM41C257-10 Abstract: No abstract text available Text: KM41C257 CMOS DRAM 256K x 1 Bit C M O S Dynamic R AM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C257 is a CMOS high speed 262,144 bit x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications	OCR Scan	PDF	KM41C257 KM41C257 KM41C257-7 KM41C257-8 KM41C257-10 100ns 130ns 150ns 180ns KM41C257-10
KM41C464Z Abstract: KM41C256P KM41C464P KM41C464J KM41C256J KM41C256Z KM41C257J 1MX1 KM41C464 Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 D y n a m ic R A M Capacity 2 5 6 K bit 1M bit Part Number Organization Speed ns Technology Features Packages Remark KM41C256P 256K X 1 70/80/100 CMOS Fast Page 16 Pin DIP Now KM41C256J 256K X 1 70/80/100 CMOS	OCR Scan	PDF	KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KM41C464Z KM41C464J 1MX1 KM41C464
PE 8001A Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001 Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1	OCR Scan	PDF	KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001
KM41C1000BJ Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page	OCR Scan	PDF	KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z
KMM591000AN Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC	OCR Scan	PDF	KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Untitled Abstract: No abstract text available Text: KM41C257 CMOS DRAM 256K x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C257 is a CMOS high speed 262,144 bit x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications	OCR Scan	PDF	KM41C257 KM41C257-7 KM41C257-8 KM41C257-10 100ns 130ns 150ns 180ns KM41C257
oT-33 Abstract: No abstract text available Text: KM41C257 CMOS DRAM 256K x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C257 is a CMOS high speed 262,144 bit x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications	OCR Scan	PDF	KM41C257 KM41C257-7 KM41C257-8 KM41C257-10 100ns 130ns 150ns 180ns KM41C257 oT-33