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    KDS12 Search Results

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    KDS12 Price and Stock

    Apex Tool Group LLC KDS120C

    CARTRIDGE 12 OZ CARTRIDGE 10/PK
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    DigiKey KDS120C Bulk 1
    • 1 $83
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    • 100 $83
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    Mouser Electronics KDS120C
    • 1 $83
    • 10 $83
    • 100 $83
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    RS KDS120C Package 1
    • 1 $83.83
    • 10 $75.45
    • 100 $75.45
    • 1000 $75.45
    • 10000 $75.45
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    Pentair Equipment Protection - Hoffman EKDS12124

    COMPACT ENC SS 2DR W MP
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    DigiKey EKDS12124 Bulk 1
    • 1 $7724.11
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    Pentair Equipment Protection - Hoffman EKDS12124PE

    FLOOR STANDING 1200X1200X400
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    DigiKey EKDS12124PE Bulk 1
    • 1 $7546.57
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    • 100 $7546.57
    • 1000 $7546.57
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    Pentair Equipment Protection - Hoffman EKDS12124-4X

    COMPACT ENC SS 2DR W MP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EKDS12124-4X Bulk 1
    • 1 $8459.3
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    • 100 $8459.3
    • 1000 $8459.3
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    Pentair Equipment Protection - Hoffman EKDS12124-316

    COMPACT ENC SS 2DR W MP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EKDS12124-316 Bulk 1
    • 1 $12092.76
    • 10 $12092.76
    • 100 $12092.76
    • 1000 $12092.76
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    Find more KDS12 price and stock on Findchips.com

    KDS12 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KDS120 Korea Electronics Switching Diode Original PDF
    KDS120 Korea Electronics Switching Diode Original PDF
    KDS120 Korea Electronics SILICON EPITAXIAL PLANAR DIODE Scan PDF
    KDS120C Apex Tool Group Accessories, Tools, CARTRIDGE 12 OZ CARTRIDGE 10/PK Original PDF
    KDS120E Korea Electronics Switching Diode Original PDF
    KDS120E Korea Electronics Switching Diode Original PDF
    KDS120V Korea Electronics Switching Diode Original PDF
    KDS121 Korea Electronics Switching Diode Original PDF
    KDS121 Korea Electronics Switching Diode Original PDF
    KDS121 Korea Electronics SILICON EPITAXIAL PLANAR DIODE Scan PDF
    KDS121E Korea Electronics Switching Diode Original PDF
    KDS121E Korea Electronics Switching Diode Original PDF
    KDS121V Korea Electronics Switching Diode Original PDF
    KDS122 Korea Electronics Switching Diode Original PDF
    KDS122 Korea Electronics Switching Diode Original PDF
    KDS122 Korea Electronics SILICON EPITAXIAL PLANAR DIODE Scan PDF

    KDS12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 12 oz Cartridge Product Details Catalog No. KDS120C UPC Code 037103177629 Description Plastic Size 12 oz. Packaging Industrial Bag Literature 5506901A.pdf Low Res. KDS120C_100.jpg Image High Res. KDS120C_300.jpg Image Stock Item Normal Stock Item Package Details Dimensions


    Original     		PDF KDS120C 506901A KDS120C

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS128E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking 2. Marking 0 1 S8 1 2 3 No. Item Marking Description Device Mark S8 KDS128E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index


    Original     		PDF KDS128E

    KDS121E

    Abstract: transistor ESM 30
    Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC


    Original     		PDF KDS121E KDS121E transistor ESM 30

    KDS120

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS120 TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : USM. B M M : VF=0.92V Typ. . D J 2 : trr=1.6ns(Typ.). A : CT=2.2pF (Typ.). 3 1 G FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time


    Original     		PDF KDS120 KDS120

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS125T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E ・Small package : TS6. K 1 6 G 2 5 G ・Low forward voltage. K B 3 4 DIM A B C D E D A ・Small total capacitance. F ・Fast reverse recovery time.


    Original     		PDF KDS125T

    KDS122

    Abstract: marking C3
    Text: SEMICONDUCTOR KDS122 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : USM. M B M : VF=0.9V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current


    Original     		PDF KDS122 KDS122 marking C3

    KDS120

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS120 TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : USM. B M M : VF=0.92V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current


    Original     		PDF KDS120 KDS120

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS127E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B FEATURES B1 Low Forward Voltage C A 6 2 5 3 4 D Ultra- Small Surface Mount Package 1 A1 Small Total Capacitance C Fast Reverse Recovery Time MAXIMUM RATING Ta=25


    Original     		PDF KDS127E

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS121V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2011. 12. 23 Revision No : 1 1/2


    Original     		PDF KDS121V

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS122 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2011. 8. 10 Revision No : 5 1/2


    Original     		PDF KDS122

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS126U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2008. 9. 11 Revision No : 1 1/2


    Original     		PDF KDS126U

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS125E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ・Small package : TES6. C A 6 2 5 3 4 D ・Small total capacitance. 1 A1 ・Fast reverse recovery time. C ・Low forward voltage. P SYMBOL


    Original     		PDF KDS125E

    KDS121

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS121 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E B M M : USM. : VF=0.9V Typ. . D J 2 A : trr=1.6ns(Typ.). G FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance


    Original     		PDF KDS121 100mA KDS121

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS125T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. TENTATIVE FEATURES Small package : TS6. Low forward voltage. E Fast reverse recovery time. K VRM 85 V Reverse Voltage VR 80 V Maximum Peak Forward Current


    Original     		PDF KDS125T

    esm power diodes

    Abstract: KDS120E
    Text: SEMICONDUCTOR KDS120E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). D H : CT=2.2pF (Typ.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES


    Original     		PDF KDS120E 100mA esm power diodes KDS120E

    IR 30 D1

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS125E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES Small package : TES6. C A 6 2 5 3 4 D Small total capacitance. 1 A1 Fast reverse recovery time. C Low forward voltage. P SYMBOL RATING


    Original     		PDF KDS125E IR 30 D1

    KDS120

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS120 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 A3 1 2 Item Marking Description Device Mark A3 KDS120 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KDS120 KDS120

    KDS120V

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS120V TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Very Small Package : VSM. Low Forward Voltage : VF=0.92V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). H G D 2 : CT=2.2pF (Typ.).


    Original     		PDF KDS120V 100mA KDS120V

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS125T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small package : TS6. K 1 6 G 2 5 G Low forward voltage. K B 3 4 DIM A B C D E D A Small total capacitance. F Fast reverse recovery time.


    Original     		PDF KDS125T

    KDS123U

    Abstract: IR 30 D1
    Text: SEMICONDUCTOR KDS123U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance ・Ultra- Small Surface Mount Package E B M M D J 3 1 G A 2


    Original     		PDF KDS123U KDS123U IR 30 D1

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS120E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). D C H : CT=2.2pF (Typ.). MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES


    Original     		PDF KDS120E Ave00 100mA

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS125E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B FEATURES B1 Small package : TES6. C A 6 2 5 3 4 D Small total capacitance. 1 A1 Fast reverse recovery time. C Low forward voltage. P SYMBOL RATING


    Original     		PDF KDS125E

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS126E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B FEATURES B1 Low forward voltage. VF = 0.9V Typ. C 1 6 2 5 3 4 D A CT = 0.9pF(Typ.) C tr r= 1.6ns(Typ.) Small total capacitance. A1 Fast reverse recovery time.


    Original     		PDF KDS126E

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR KDS125U TECHNI CAL DATA SI LI CON EPI TAXI AL PLANAR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • Sm all package : US6. • L ow forw ard voltage. • Fast reverse recovery tim e. • Sm all total capacitance. M A X IM U M R A T IN G T a=25°C


    OCR Scan     		PDF KDS125U