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    IXTP56N15T Price and Stock

    Littelfuse Inc IXTP56N15T

    MOSFET N-CH 150V 56A TO220AB
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    DigiKey IXTP56N15T Tube 300
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    Newark IXTP56N15T Bulk 300
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    IXYS Corporation IXTP56N15T

    MOSFETs 56 Amps 150V 36 Rds
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    Mouser Electronics IXTP56N15T
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    Future Electronics IXTP56N15T Tube 300
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    TTI IXTP56N15T Tube 300
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    TME IXTP56N15T 1
    • 1 $3.75
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    IXTP56N15T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP56N15T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 56A TO-220 Original PDF

    IXTP56N15T Datasheets Context Search

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    ixtp56n15t

    Abstract: 56N15 56N15T IXTP56n15 IXTA56N15T
    Text: IXTA56N15T IXTP56N15T TrenchTM Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 150V = 56A Ω ≤ 36mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V


    Original     		PDF IXTA56N15T IXTP56N15T O-263 O-220AB 062in. 56N15T 1-12-A ixtp56n15t 56N15 IXTP56n15

    IXTA56N15T

    Abstract: No abstract text available
    Text: TrenchTM Power MOSFETs VDSS ID25 IXTA56N15T IXTP56N15T RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 150V = 56A Ω ≤ 36mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V


    Original     		PDF IXTA56N15T IXTP56N15T O-263 260ff) 56N15T 1-12-A IXTA56N15T

    ixtp56n15t

    Abstract: IXTP56n15 56N15 56N15T IXTA56N15T mosfet ixtp56n15t ixta 56A4-1 IXTP5
    Text: Preliminary Technical Information TrenchHVTM Power MOSFET IXTA56N15T IXTP56N15T VDSS ID25 RDS on = 150 V = 56 A Ω ≤ 36 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTA56N15T IXTP56N15T O-220) O-220 O-263 56N15T ixtp56n15t IXTP56n15 56N15 56N15T IXTA56N15T mosfet ixtp56n15t ixta 56A4-1 IXTP5

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250