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    IRLZ34 Price and Stock

    Infineon Technologies AG IRLZ34NPBF

    MOSFET N-CH 55V 30A TO220AB
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    DigiKey IRLZ34NPBF Tube 48,295 1
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    Avnet Americas IRLZ34NPBF Bulk 16 Weeks, 3 Days 1
    • 1 $1.54
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    IRLZ34NPBF Tube 10 Weeks 2,000
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    Mouser Electronics IRLZ34NPBF 4,953
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    Verical IRLZ34NPBF 14,712 22
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    IRLZ34NPBF 6,184 68
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    Newark IRLZ34NPBF Bulk 4,309 1
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    Rochester Electronics IRLZ34NPBF 65 1
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    TME IRLZ34NPBF 954 1
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    Ameya Holding Limited IRLZ34NPBF 450
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    Chip 1 Exchange IRLZ34NPBF 2,600
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    Chip1Stop IRLZ34NPBF Tube 6,184
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    EBV Elektronik IRLZ34NPBF 14,000 11 Weeks 1,000
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    New Advantage Corporation IRLZ34NPBF 11,000 1
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    Win Source Electronics IRLZ34NPBF 29,240
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    Infineon Technologies AG IRLZ34NSTRLPBF

    MOSFET N-CH 55V 30A D2PAK
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    DigiKey IRLZ34NSTRLPBF Cut Tape 28,637 1
    • 1 $1.91
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    IRLZ34NSTRLPBF Digi-Reel 28,637 1
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    IRLZ34NSTRLPBF Reel 28,000 800
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    Avnet Americas IRLZ34NSTRLPBF Ammo Pack 16 Weeks, 4 Days 1
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    Mouser Electronics IRLZ34NSTRLPBF 1,721
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    Verical IRLZ34NSTRLPBF 34,400 800
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    IRLZ34NSTRLPBF 6,331 56
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    IRLZ34NSTRLPBF 1,600 71
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    IRLZ34NSTRLPBF Cut Strips 731 10 Weeks 1
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    Newark IRLZ34NSTRLPBF Cut Tape 31,371 1
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    Bristol Electronics IRLZ34NSTRLPBF 198
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    Quest Components IRLZ34NSTRLPBF 1,280
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    CoreStaff Co Ltd IRLZ34NSTRLPBF 1,600
    • 1 $4.653
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    EBV Elektronik IRLZ34NSTRLPBF 107,200 11 Weeks 800
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    New Advantage Corporation IRLZ34NSTRLPBF 33,600 1
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    Win Source Electronics IRLZ34NSTRLPBF 27,200
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    Vishay Siliconix IRLZ34PBF

    MOSFET N-CH 60V 30A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRLZ34PBF Tube 6,105 1
    • 1 $2.67
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    Vishay Siliconix IRLZ34PBF-BE3

    MOSFET N-CH 60V 30A TO220AB
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    DigiKey IRLZ34PBF-BE3 Tube 3,244 1
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    Vishay Siliconix IRLZ34SPBF

    MOSFET N-CH 60V 30A TO263
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    DigiKey IRLZ34SPBF Tube 812 1
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    Find more IRLZ34 price and stock on Findchips.com

    IRLZ34 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRLZ34 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRLZ34 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A TO-220AB Original PDF
    IRLZ34 International Rectifier HEXFET Power MOSFET Scan PDF
    IRLZ34 International Rectifier HEXFET Power MOSFET Scan PDF
    IRLZ34 International Rectifier HEXFET Power MOSFET Scan PDF
    IRLZ34 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRLZ34 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRLZ34 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRLZ34 Unknown FET Data Book Scan PDF
    IRLZ34 Samsung Electronics N-Channel Logic Level MOSFET Scan PDF
    IRLZ34A Samsung Electronics Advanced Power MOSFET Scan PDF
    IRLZ34L International Rectifier HEXFET Power MOSFET Original PDF
    IRLZ34L International Rectifier HEXFET Power MOSFET Original PDF
    IRLZ34L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A TO-262 Original PDF
    IRLZ34N International Rectifier HEXFET Power MOSFET Original PDF
    IRLZ34N International Rectifier HEXFET Power MOSFET Original PDF
    IRLZ34N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRLZ34N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRLZ34N with Standard Packaging Original PDF
    IRLZ34N Philips Semiconductors N-channel enhancement mode Logic level TrenchMOS transistor Original PDF
    IRLZ34N Toshiba Power MOSFETs Cross Reference Guide Original PDF

    IRLZ34 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-994

    Abstract: IRLZ34N IRLZ34NL IRLZ34NS
    Text: PD - 95583 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ34NS l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ34NSPbF IRLZ34NLPbF HEXFET Power MOSFET


    Original     		PDF IRLZ34NS) IRLZ34NL) IRLZ34NSPbF IRLZ34NLPbF is957) EIA-418. AN-994 IRLZ34N IRLZ34NL IRLZ34NS

    Untitled

    Abstract: No abstract text available
    Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRLZ34S, IRLZ34L, SiHLZ34S SiHLZ34L 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ34, SiHLZ34 O-220 O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ34, SiHLZ34 2002/95/EC O-220AB O-220AB 11-Mar-11

    BJ77

    Abstract: No abstract text available
    Text: PD - 94830 IRLZ34NPbF l l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.035Ω G ID = 30A S Description


    Original     		PDF IRLZ34NPbF O-220 O-220AB. O-220AB BJ77

    Untitled

    Abstract: No abstract text available
    Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ34, SiHLZ34 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Single DESCRIPTION D I2PAK D2PAK (TO-262) G


    Original     		PDF IRLZ34S, IRLZ34L, SiHLZ34S SiHLZ34L IRLZ34S/SiHLZ34S) IRLZ34L/SiHLZ34L) 12-Mar-07

    DD 1518

    Abstract: No abstract text available
    Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • 60 RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration • Fast Switching • Fully Avalanche Rated Single


    Original     		PDF IRLZ34S, IRLZ34L, SiHLZ34S SiHLZ34L 18-Jul-08 DD 1518

    AN609

    Abstract: IRLZ34L IRLZ34S SiHLZ34S
    Text: IRLZ34S_RC, IRLZ34L_RC, SiHLZ34S_RC, SiHLZ34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRLZ34S IRLZ34L SiHLZ34S SiHLZ34L AN609, 4829m 1545m 8453m 8853m 8989m AN609

    marking 27A DIODE

    Abstract: IRLZ34N IRF1010
    Text: PD - _ IRLZ34N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.035Ω ID = 27A Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRLZ34N O-220 IRF1010 marking 27A DIODE IRLZ34N IRF1010

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.905A IRLZ34S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRLZ34S Low-profile through-hole (IRLZ34L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description


    Original     		PDF IRLZ34S/L IRLZ34S) IRLZ34L) 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD - 94885 IRLZ34PbF • Lead-Free Document Number: 91327 12/11/03 www.vishay.com 1 IRLZ34PbF Document Number: 91327 www.vishay.com 2 IRLZ34PbF Document Number: 91327 www.vishay.com 3 IRLZ34PbF Document Number: 91327 www.vishay.com 4 IRLZ34PbF Document Number: 91327


    Original     		PDF IRLZ34PbF O-220AB 08-Mar-07

    IRLZ34N

    Abstract: No abstract text available
    Text: PD - 9.1307B IRLZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G ID = 30A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1307B IRLZ34N O-220 IRLZ34N

    AN-994

    Abstract: IRLZ34N IRLZ34NL IRLZ34NS
    Text: PD - 91308A IRLZ34NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRLZ34NS l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V


    Original     		PDF 1308A IRLZ34NS/L IRLZ34NS) IRLZ34NL) AN-994 IRLZ34N IRLZ34NL IRLZ34NS

    Untitled

    Abstract: No abstract text available
    Text: PD - 95583 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ34NS l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ34NSPbF IRLZ34NLPbF HEXFET Power MOSFET


    Original     		PDF IRLZ34NS) IRLZ34NL) IRLZ34NSPbF IRLZ34NLPbF EIA-418.

    SiHLZ34L

    Abstract: No abstract text available
    Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ34S, SiHLZ34S) • Low-Profile Through-Hole (IRLZ34L, SiHLZ34L)


    Original     		PDF IRLZ34S, IRLZ34L, SiHLZ34S SiHLZ34L 2002/95/EC 18-Jul-08

    AN609

    Abstract: IRLZ34 SiHLZ34
    Text: IRLZ34_RC, SiHLZ34_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRLZ34 SiHLZ34 AN609, 5985m 2012m 8061m 1186m 8087m 5497m 5344u AN609

    Untitled

    Abstract: No abstract text available
    Text: PD - 94885 IRLZ34PbF • Lead-Free www.irf.com 1 12/11/03 IRLZ34PbF 2 www.irf.com IRLZ34PbF www.irf.com 3 IRLZ34PbF 4 www.irf.com IRLZ34PbF www.irf.com 5 IRLZ34PbF 6 www.irf.com IRLZ34PbF TO-220AB Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRLZ34PbF O-220AB O-220AB.

    1RFZ44

    Abstract: 1RL520 1RFZ22 IRFZ30 IRFZ41 1RFZ40 IRF145 1RL540 IRFZ45 1xys
    Text: - f f t * £ fê Ta=25^ M € tí: € t V d s Vg s or Vd g * (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR IR IXYS


    OCR Scan     		PDF Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 3TO-220 IRL510 O-220 IRL511 1RFZ44 1RL520 1RFZ22 IRFZ30 IRFZ41 IRF145 1RL540 IRFZ45 1xys

    1XYS

    Abstract: 1RFZ40 IRFZ41 1XTH5N100 1RLZ34 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
    Text: - f M € tí: € ft t V ds Vg s or Vd g * V (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N 50 60 60 100 250 500 IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR


    OCR Scan     		PDF Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 T0-247 IXTH6N80A O-247 IXTH10N100 1XYS IRFZ41 1XTH5N100 1RLZ34 IRFZ44 IRH254 IRL510

    IRLZ34N

    Abstract: C699
    Text: PD - 9.1307B International IG R Rectifier IRLZ34N HEXFET Power M OSFET Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V ^DS on = 0.035Q lD = 30A Description


    OCR Scan     		PDF 1307B IRLZ34N T0-220 C-699 IRLZ34N C699

    C703 diode

    Abstract: C704 diode MARKING c701
    Text: International IQR Rectifier • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRLZ34NS • Low-profile through-hole (IRLZ34NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated P D -9.1308 IRLZ34NS/L


    OCR Scan     		PDF IRLZ34NS) IRLZ34NL) IRLZ34NS/L C-703 C-704 C703 diode C704 diode MARKING c701

    Untitled

    Abstract: No abstract text available
    Text: PD-91308A In te rn a tio n a l I ö R Rectifier • • • • • • • IRLZ34NS/L Logic-Level Gate Drive Advanced Process Technology Surface Mount IRLZ34NS Low-profilethrough-hole(IRLZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated


    OCR Scan     		PDF IRLZ34NS) IRLZ34NL) PD-91308A IRLZ34NS/L

    IRLZ34

    Abstract: MOSFET N 30V 30A 252 558C
    Text: International S Rectifier PD-9.558C IRLZ34 HEXFET P ow er M O S F E T • Dynamic dv/dt Rating • Logic-Level Gate Drive • RDS on S p e c ifie d a t V g s = 4 V & 5 V • • • • 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		PDF IRLZ34 O-220 T0-220 IRLZ34 MOSFET N 30V 30A 252 558C