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    IRFZ24 Search Results

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    IRFZ24 Price and Stock

    Vishay Siliconix IRFZ24PBF

    MOSFET N-CH 60V 17A TO220AB
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    DigiKey IRFZ24PBF Tube 222 1
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    RS IRFZ24PBF Bulk 10
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    Vishay Siliconix IRFZ24PBF-BE3

    MOSFET N-CH 60V 17A TO220AB
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    DigiKey IRFZ24PBF-BE3 Tube 178 1
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    Vishay Siliconix IRFZ24

    MOSFET N-CH 60V 17A TO220AB
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    Vishay Siliconix IRFZ24S

    MOSFET N-CH 60V 17A D2PAK
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    DigiKey IRFZ24S Tube 1,000
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    Vishay Siliconix IRFZ24L

    MOSFET N-CH 60V 17A TO262-3
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    IRFZ24 Datasheets (78)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFZ24 Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFZ24 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFZ24 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 17A TO-220AB Original PDF
    IRFZ24 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFZ24 International Rectifier N-CHANNEL HEXFET Power MOSFET Scan PDF
    IRFZ24 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRFZ24 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFZ24 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFZ24 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFZ24A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFZ24A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFZ24A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFZ24L International Rectifier HEXFET Power MOSFET Original PDF
    IRFZ24L International Rectifier Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) Original PDF
    IRFZ24L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 17A TO-262 Original PDF
    IRFZ24L Unknown Scan PDF
    IRFZ24N International Rectifier HEXFET Power Mosfet Original PDF
    IRFZ24N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ24N with Standard Packaging Original PDF
    IRFZ24N International Rectifier Power MOSFET, 55V, 17A Original PDF
    IRFZ24N Philips Semiconductors N-channel enhancement mode TrenchMOS transistor Original PDF

    IRFZ24 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S-L_RC, SiHFZ24S-L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFZ24S-L SiHFZ24S-L AN609, 0823m 8121m 6203m 3046m 6689m

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.891A IRFZ24S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ24S/L IRFZ24S) IRFZ24L) 08-Mar-07

    irf*24n

    Abstract: current regulator IRFZ24N IRFZ24N equivalent IRF (10A) 55V IRFZ24N
    Text: PD - 91354A IRFZ24N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.07Ω G Description ID = 17A S Fifth Generation HEXFET ® power MOSFETs from


    Original     		PDF 1354A IRFZ24N O-220 irf*24n current regulator IRFZ24N IRFZ24N equivalent IRF (10A) 55V IRFZ24N

    AN-994

    Abstract: IRFZ24V IRFZ24VL IRFZ24VS
    Text: PD - 94182 IRFZ24VS IRFZ24VL HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 60mΩ


    Original     		PDF IRFZ24VS IRFZ24VL AN-994 IRFZ24V IRFZ24VL IRFZ24VS

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S IRFZ24S/SiHFZ24S) IRFZ24L/SiHFZ24L) O-262) O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S IRFZ24S/SiHFZ24S) IRFZ24L/SiHFZ24L) O-262) O-263) 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: PD - 95623 IRFZ24VPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description l D l VDSS = 60V


    Original     		PDF IRFZ24VPbF O-220 O-220AB

    AN-994

    Abstract: IRFZ24N IRFZ24NL IRFZ24NS
    Text: PD - 95147 IRFZ24NS/LPbF l l l l l l l Advanced Process Technology Surface Mount IRFZ24NS Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.07Ω


    Original     		PDF IRFZ24NS/LPbF IRFZ24NS) IRFZ24NL) AN-994 IRFZ24N IRFZ24NL IRFZ24NS

    AN-994

    Abstract: IRFZ24V IRFZ24VL IRFZ24VS IRL3103L
    Text: PD - 95524 IRFZ24VSPbF IRFZ24VLPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D


    Original     		PDF IRFZ24VSPbF IRFZ24VLPbF EIA-418. AN-994 IRFZ24V IRFZ24VL IRFZ24VS IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 11-Mar-11

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


    Original     		PDF O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRFZ24S, IRFZ24L, SiHFZ24S SiHFZ24L 2002/95/EC 2011/65/EU

    IRFZ24V

    Abstract: No abstract text available
    Text: PD - 94156 IRFZ24V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 60mΩ


    Original     		PDF IRFZ24V O-220 O-220AB IRFZ24V

    IRFP150N equivalent

    Abstract: IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
    Text: VDS RDS ON ID Package Philips VDS RDS(ON) ID Rating RDS(ON) IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRL2203NS IRL3103 IRL3103S IRL3215 IRL3705N IRL3803 IRL3803S IRLL014 IRLML2803 IRLR024N IRLZ24N


    Original     		PDF IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRFP150N equivalent IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1355B IRFZ24NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ24NS Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.07Ω G ID = 17A S


    Original     		PDF 1355B IRFZ24NS/L IRFZ24NS) IRFZ24NL) cap245,

    Td 68

    Abstract: No abstract text available
    Text: IRFZ24NS/NL Power MOSFET VDSS = 55V, RDS on = 0.07 mohm, ID = 17 A D G S Symbol N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current


    Original     		PDF IRFZ24NS/NL -20VDC 55VDC, 44VDC, 20VDC 10VDC, 10VDC Td 68

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.10 Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11


    Original     		PDF IRFZ24, SiHFZ24 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24 Advanœ d Power MOSFET FEATURES B V DSS = 60 V ♦ Avalanche Rugged Technology ^ D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 7 Q 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -220 ♦ 175°C Operating Temperature


    OCR Scan     		PDF IRFZ24

    mosfet ir 250 n

    Abstract: No abstract text available
    Text: IRFZ24 Advanced Power MOSFET FEATURES B ^ dss - 60 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 7 Q 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature


    OCR Scan     		PDF IRFZ24 mosfet ir 250 n

    Untitled

    Abstract: No abstract text available
    Text: IRFZ24A Advanced Power MOSFET FEATURES B ^ dss - 60 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 7 Q 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature


    OCR Scan     		PDF IRFZ24A

    IRFZ25

    Abstract: IRFZ22 mosfet z24 mosfet IRFZ20
    Text: IRFZ24/Z25 IRFZ20/Z22 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • L o w e r R d s o n Im p ro v e d in d u c tiv e ru g g e d n e s s F a s t s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e


    OCR Scan     		PDF IRFZ24/Z25 IRFZ20/Z22 IRFZ20 IRFZ22 IRFZ24 IRFZ25 IRFZ22 mosfet z24 mosfet

    IRFZ24

    Abstract: No abstract text available
    Text: IRFZ24 Advanced Power MOSFET FEATURES B V DSS = 60 V ♦ A valanche Rugged Technology ^ D S o n - ♦ Rugged G ate O xide Technology ♦ Lower Input Capacitance lD = 0 .0 7 £ 2 17 A ♦ Im proved G ate Charge ♦ Extended Safe O perating Area TO-220 ♦ 175°C O perating Tem perature


    OCR Scan     		PDF IRFZ24 IRFZ24

    ST DIODE C427

    Abstract: c427 diode z24n st c426 fz24n c429 diode
    Text: International IOR Rectifier P D - 9 .1 3 5 5 B IRFZ24NS/L HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRFZ24NS Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated


    OCR Scan     		PDF IRFZ24NS) IRFZ24NL) IRFZ24NS/L G-428 C-429 ST DIODE C427 c427 diode z24n st c426 fz24n c429 diode