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    SK Hynix Inc HY514264BJC-60

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    SK Hynix Inc HY514264BJC-50

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    SK Hynix Inc HY514264BSLTC-50

    256K X 16 EDO DRAM, 50 ns, PDSO40
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    Quest Components HY514264BSLTC-50 531
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    HYN HY514264BJC-50

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    ComSIT USA HY514264BJC-50 28
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    HY514264B Datasheets Context Search

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    HY514264

    Abstract: HY514264B DSA0015545 256Kx16 lcas
    Text: HY514264B 256Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60


    Original     		PDF HY514264B 256Kx16, 16-bit 16-bits 256Kx16 HY514264 HY514264B DSA0015545 256Kx16 lcas

    am29f010b-70ef

    Abstract: A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference
    Text: Cross Reference Memory IC's and More www.amictechnology.com part number AMIC part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29F002B AM29F002BB-120JF AM29F002BB-55JD AM29F002BB-90EI


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 am29f010b-70ef A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    UM62256EM-70LL

    Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
    Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723

    um61256

    Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
    Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245

    um61256

    Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
    Text: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original     		PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT

    um61256

    Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
    Text: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 um61256 PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620

    HY514264

    Abstract: No abstract text available
    Text: •HYUNDAI HY514264B 256Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60


    OCR Scan     		PDF HY514264B 256Kx16, 16-bit 40-pin 400mil) 16-bits 256Kx16 HY514264

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    hy5142648

    Abstract: HY514264
    Text: « « Y I IH D f tl -• HY514264B 2S6Kx1S, Extend«! Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time(50, 60


    OCR Scan     		PDF HY514264B 16-bit 16-bits hy5142648 HY514264

    HY514264b

    Abstract: HY514264 HY514264BJC
    Text: “H Y U N D A I HY514264B Series 256K x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells


    OCR Scan     		PDF 16-bit HY514264B 16-bits 011Jul HY514264 HY514264BJC

    BT 2313 M

    Abstract: Bt 2313 HY514264B HY514264 BSH15 hy514264bjc50 icshtibi BVOE 18 DCS15 npjt
    Text: HY514264B Seies HYUNDAI 256K X 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY514264B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access


    OCR Scan     		PDF HY514264B 16-bit HV514264B 400mil 40pin 40/44pin 1AC29-10-MA BT 2313 M Bt 2313 HY514264 BSH15 hy514264bjc50 icshtibi BVOE 18 DCS15 npjt

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HY514264B Seies 256K X 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY514264B is the new generation and fast dynamic RAM organized 262,144x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access


    OCR Scan     		PDF HY514264B 16-bit 400mil 40pin 40/44pin 0DD42fl6 1AC29-10-MAY95

    HY514260

    Abstract: HY5117404A 164-04A 4m 300mil
    Text: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1


    OCR Scan     		PDF HY531000A HY534256A 256KX8 HY512800 HY512264 HY5120 6404A HY5116404B HY51V16404A HY51V16404B HY514260 HY5117404A 164-04A 4m 300mil

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ