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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: ADV MICRO MEMORY MAE D Q257S2Û 0D304Ô4 b IA M D 4 T -4 6 -1 3 -2 9 Advanced Micro Devices Am27C2048 2 Megabit (131,072 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time -v 100 ns Low power consumption - 25 mA typical CMOS standby current	OCR Scan	PDF	Q257S2Ã 0D304Ã Am27C2048 16-Bit) -40-pin 44-pin D257S2Ã D03DMn 05-006B
Untitled Abstract: No abstract text available Text: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase	OCR Scan	PDF	32-Pin Am28F512 28F5l Am28F512-75 02S752A QD32bbS
D2575 Abstract: AM27C256 AM27C256-55 AM27C256-70 Text: AD V MICRO MEMORY t4E » • D257S2Ô G03n33 7SO CI Advanced Micro Devices Am27C256 256 Kilobit (32,768 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ Fast access time Latch-up protected to 100 m A from -1 V to Vcc + 1 V — 55 ns ■ Low power consumption	OCR Scan	PDF	D257S2Ã Am27C256 28-pin 32-pin Am27MORY KS000010 08007G-10 D2575 AM27C256-55 AM27C256-70
programming AM29F400 Abstract: TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — Minimizes system level power requirements	OCR Scan	PDF	Am29F400T/Am29F400B 8-Bit/262 16-Bit) 44-pin 48-pin D257S2Ã 003S5bb programming AM29F400 TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB
Untitled Abstract: No abstract text available Text: F IN A L Am29F100T/Am29F100B AdvaM n££ 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ — M inimizes system level power requirements	OCR Scan	PDF	Am29F100T/Am29F100B 8-Bit/65 16-Bit) 48-pin 29F100T/Am29F100B 29F100
0257S2 Abstract: No abstract text available Text: ADV MI CRO BÖE MEMORY D . * QSS7SSÖ 002=14^ W PS ÏS -2 ? I AMD4 3 £? Advanced Micro Devices Am27C512L 65,536 x 8-Bit Ultra-Low CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tim e—70ns ■ Ultra-low power consum ption: - 5 mA maximum active current at 5 MHz	OCR Scan	PDF	Am27C512L 27C5l2 512K-blt, AITI27C512L T-46-13-29 0257S2