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    Focus Display Solutions Inc E40RB-FW430-C

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    BFW43 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFW43 Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=150 / Ic=50m / Hfe=40min / fT(Hz)=60M / Pwr(W)=0.4 Original PDF
    BFW43 STMicroelectronics HIGH VOLTAGE AMPLIFIER Original PDF
    BFW43 Micro Electronics High Voltage Transistors Scan PDF
    BFW43 Micro Electronics Semiconductor Device Data Book Scan PDF
    BFW43 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFW43 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFW43 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFW43 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFW43 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BFW43 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFW43 Semelab Transistor Selection Guide Scan PDF
    BFW43 Semico High Voltage Transistors Scan PDF
    BFW43 SGS-Ates Shortform Data Book 1977/78 Short Form PDF
    BFW43 SGS-Ates Misc. Data Book Scans 1975/76 Scan PDF
    BFW43 SGS-Ates Small Signal Transistors 3rd Edition 1978 Scan PDF
    BFW43 SGS-Ates Semiconductor Data Book 1976/77 Scan PDF
    BFW43 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BFW430K5 Vishay Resistor: Carbon Film: 430K: Original PDF
    BFW43M5 Vishay Resistor: Carbon Film: 43M: Original PDF

    BFW43 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFW43

    Abstract: No abstract text available
    Text: BFW43 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 150V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products


    Original     		PDF BFW43 O206AA) 10/10m 19-Jun-02 BFW43

    BFW43

    Abstract: No abstract text available
    Text: BFW43 HIGH VOLTAGE AMPLIFIER DESCRIPTION The BFW43 is a silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. It is designed for use in amplifiers where high voltage and high gain are necessary. In particular, its feature a VCEO of 150V are specified over a wide


    Original     		PDF BFW43 BFW43

    BFW43

    Abstract: No abstract text available
    Text: BFW43 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 150V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products


    Original     		PDF BFW43 O206AA) 10/10m 2-Aug-02 BFW43

    BFW43

    Abstract: No abstract text available
    Text: BFW43 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 150V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products


    Original     		PDF BFW43 O206AA) 10/10m 16-Jul-02 BFW43

    bfw44

    Abstract: BFW43 BFW transistors BFw 94
    Text: BFW43 BFW44 HIGH VOLTAGE AMPLIFIERS DESCRIPTION The BFW43 and BFW44 are silicon planar epitaxial PNP transistors in Jedec TO-18 BFW43 and Jedec TO-39 (BFW44) metal cases. Both devices are designed for use in amplifiers where high voltage and high gain are necessary. In


    Original     		PDF BFW43 BFW44 BFW44 BFW43) BFW44) 15otherwise BFW transistors BFw 94

    Untitled

    Abstract: No abstract text available
    Text: BFW43 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) PNP SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • PNP High Voltage Planar Transistor 2.54 (0.100)


    Original     		PDF BFW43

    2n2222 sot-23

    Abstract: 2N2369 SOT-23 2N2907 SOT-23 bcy79 sot23 BC461 2N5322 bc107 sot23 SOT-23 2N2222 2N3700 sot23 2n2222a SOT223 So642
    Text: TRANSISTORS SMALL SIGNAL TO-39 TO-18 SOT-223 SOT-23 NPN GENERAL PURPOSE TRANSISTORS - TO-18 hFE @ IC VCEO VCER* VCE sat @ IC / IB Type (V) min/max (mA) 55 50/– 50 30 40 80 80 100/300 100/300 40/– 100/300 150 150 150 150 max fT ts Ptot Also available min


    Original     		PDF OT-223 OT-23 BSX33 2N2222 2N2222A 2N720A 2N3700 STZTA42 2n2222 sot-23 2N2369 SOT-23 2N2907 SOT-23 bcy79 sot23 BC461 2N5322 bc107 sot23 SOT-23 2N2222 2N3700 sot23 2n2222a SOT223 So642

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


    Original     		PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


    Original     		PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    stencil

    Abstract: BC237 automatic heat detector project report BC393 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


    Original     		PDF BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    Original     		PDF SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1

    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


    Original     		PDF BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056

    transistor bc237 bc337

    Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage


    Original     		PDF BC337 BC338 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor bc237 bc337 replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT

    bc182 equivalent 2n2907

    Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO


    Original     		PDF BC182 BC183 BC184 BC184 226AA) Junction218A MSC1621T1 MSC2404 bc182 equivalent 2n2907 bc183 equivalent BC237 BF245 bc184 equivalent

    transistor MPS5771

    Abstract: BC237 bfw4
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit


    Original     		PDF MMBD914LT1 236AB) DE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor MPS5771 BC237 bfw4

    P2d MARKING CODE

    Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage


    Original     		PDF PZTA92T1 261AA ELECTRI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 P2d MARKING CODE H2A transistor ev 2816 BC237 transistor 2N2906

    CI 74

    Abstract: BFW transistors bfw 10 transistor BFW 100 transistor BFW43 BFW44 G3137
    Text: BFW43 BFW44 SILICON PLANAR PNP HIGH VOLTAG E AM PLIFIERS T he EIFW 43 and BFW 44 are silic o n p la n a r e p ita x ia l PNP tra n sisto rs in Jedec T O - 1 8 B F W 4 3 and Jedec T O -3 9 (BFW 4 4 ) m etal cases. B o th devices are designed fo r use in a m p lifie rs w here high voltage and high gain are necessary.


    OCR Scan     		PDF BFW43 BFW44 BFW43) 300/-is, 6-30S9 G-3137 G-3139M CI 74 BFW transistors bfw 10 transistor BFW 100 transistor BFW44 G3137

    Untitled

    Abstract: No abstract text available
    Text: Æ T S G S - T H O M S O N B F W 43 n lsi S IIL[iCTISÎ iD©S HIGH VOLTAGE AMPLIFIER DESCRIPTION The BFW43 is a silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. It is designed for use in amplifiers where high voltage and high gain are necessary. In particular, its


    OCR Scan     		PDF BFW43 BFW43 -3139M

    BFY83

    Abstract: BLY48
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34


    OCR Scan     		PDF BFT37A BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFY83 BLY48

    bfw44 2n5401

    Abstract: MPSD01 bfx98 mpsl01
    Text: High Voltage Transistors TYPE NO. POLA­ R IT Y CA SE M A X IM U M R A T IN G S VcEO Pd Ic Ic.M* ^CER* raW (m A ) (V) H FE fT ^CE(sat) m in m ax Ic (m A ) V ce (V) m ax (V) Ic (m A ) m in (M H z) Cob C re* m ax (M H z) BFW43 BFW44 BFW45 P P N T O -18 TO-39


    OCR Scan     		PDF BFW43 BFW44 BFW45 BFX98 BFY57 BFY80 BSS38 BSV68 BSY79 MH7301 bfw44 2n5401 MPSD01 mpsl01

    bfw44

    Abstract: BFW43 BFW transistors
    Text: 3QE D • 7121237 QDBQTTB D ■ Ì Eu SGS-THOMSON ^I TO «S BFW43 BFW44 S G S-THOMSON HIGH VOLTAGE AMPLIFIERS DESCRIPTIO N T h e B F W 43 and B F W 44 a re silicon planar epitaxial P N P transistors in Jedec T O -1 8 B F W 4 3 and Jede c T O -3 9 (B F W 4 4) m etal cases.


    OCR Scan     		PDF BFW43 BFW44 GQ3Q175 BFW43-BFW44 T-31-19 bfw44 BFW transistors

    BFW45

    Abstract: BFR59 BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 BFT58
    Text: High Voltage Transistors TYPE NO. 101 POLA­ RITY CASE MAXIMUM RATINGS VCEO IC Pd ICM* VCER* mA (mW) (V) VCE(sat) HFE min max IC (mA) VCE (V) m ai (V) IC (mA) fr min (MHz) Cob Cre* max (MHz) BFR59 BFS89 BFS90 BFS91 BFT47 N N P P N TO-39 TO-39 TO-39 TO-39


    OCR Scan     		PDF BFR59 BFS89 BFS90 BFS91 BFT47 5000G BFT48 BFT49 BFW45 BFT57 BFT58

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF