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    BDY73 Price and Stock

    Continental Device India Ltd TBDY73

    Transistor: NPN; bipolar; 60V; 15A; 117W; TO3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME TBDY73 218 1
    • 1 $0.72
    • 10 $0.65
    • 100 $0.58
    • 1000 $0.58
    • 10000 $0.58
    Buy Now

    BDY73 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDY73 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=50-150 / fT(Hz)=- / Pwr(W)=117 Original PDF
    BDY73 Continental Device India TO-3 Power Package Transistors Scan PDF
    BDY73 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BDY73 Continental Device India General Purpose Power Transistors in TO-204AA Package Scan PDF
    BDY73 Continental Device India TO-3 Power Package Transistors Scan PDF
    BDY73 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDY73 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDY73 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDY73 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY73 Unknown Transistor Replacements Scan PDF
    BDY73 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BDY73 SGS-Thomson Transistor Datasheet Scan PDF
    BDY73 Thomson-CSF Power Transistor Data Book 1975 Scan PDF
    BDY73 Thomson-CSF Condensed Data Book 1977 Scan PDF

    BDY73 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDY73

    Abstract: No abstract text available
    Text: BDY73 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BDY73 O204AA) 31-Jul-02 BDY73

    BDY73

    Abstract: No abstract text available
    Text: J.E11EU LS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BDY73 DESCRIPTION • Excellent Safe Operating Area • DC Current Gain-hFE=50-150@lc = 4A • Collector-Emitter Saturation Voltage: VCE(sa.)= 11 V(Max)@ lc = 4A


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    PDF E11EU BDY73 100mA BDY73

    BDY73

    Abstract: No abstract text available
    Text: BDY73 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BDY73 O204AA) 16-Jul-02 BDY73

    Untitled

    Abstract: No abstract text available
    Text: BDY73 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BDY73 O204AA) 18-Jun-02

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    BDY38

    Abstract: 2N3055HV BDY20 BU326A 2N3055 bu326 2N3773 2N4347 2N6253 2N6257
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-3 Metal Can Package 3 All dimensions are in mm. PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR 2 1 TO-3 Power Package Transistors NPN Maximum Ratings Type No.


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    PDF 2N3055 BDX18 CDP055 MJ2955 BDY38 2N3055HV BDY20 BU326A 2N3055 bu326 2N3773 2N4347 2N6253 2N6257

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    TRANSISTOR BC337 SMD

    Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
    Text: • Transistors • • • • • Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors ~ Worldwide Reach Product Profile Transistors Product Range • • Chips/Dice – Diffused Silicon Wafers Surface Mount and Leaded Semiconductor Devices


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    PDF MPSA45 P2N2369 PN2222 MPSA05 MPSA55 P2N2369A PN2222A MPS2907A MPSA06 MPSA56 TRANSISTOR BC337 SMD transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139

    SM2174

    Abstract: SM2184 2N3055H MOTOROLA 2SD878 mj2955 TO-218 BDY73 BD130 BDY20 2SD151 2SA1042
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD Max hFE *T ON) Min (Hz) >CBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15


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    PDF BDT56 BDT58 BD907 BD908 MJE1291 MJE1661 SM2174 SM2184 2N3055H MOTOROLA 2SD878 mj2955 TO-218 BDY73 BD130 BDY20 2SD151 2SA1042

    BDY77

    Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55
    Text: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74


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    PDF BDY45 20min DDY46 BDY54 BDY55 BDY56 BDY57 BDY58 BDY77 BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36

    BDY20

    Abstract: BU208A BU608 2SD870 2S01168 2S0200 BDY38 BU208 2SC1942 2SD1168
    Text: TO-3 Power Package Transistors NPN Max mum F atings Type No. V CBO V CEC V E0C (V) Min (V) Min (V) Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 800 Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) PD <W) t (A) @Tc=25° 'c a o (MA) V CB


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    PDF 2SC1942 2SD1168 2SD1168P 2SD1168Q 2SD200 2SD870 2SD871 BU205 BU207 BU208 BDY20 BU208A BU608 2S01168 2S0200 BDY38 BU208

    axial zener diodes marking code c3v6

    Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
    Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.


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    PDF BR805A BR81A BR82A BR84A BR86A BR88A BR91A BR92A BR94A BR96A axial zener diodes marking code c3v6 H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    BU2080

    Abstract: No abstract text available
    Text: TO-3 Power Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. V CBO V C E0 (V) Min (V) Min 1500 800 2SD1168P Pd 'c VebO (W) (A) (V) Min 0Tc=25°c 5 50 !cbo (PA) Max V CB @ (V) hpE 1000 1500 9


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    PDF 2SD1168P 2SD1168Q 2SD200 2SD83 BU326 BU326A BU608 CDN055 BU2080

    BU208D

    Abstract: BU208 BU208A 2SD870 BDY38 BOY20 BU2080 2SC1942 2SD1168 2SD1168P
    Text: TO-3 Power Package Transistors NPN Maximum Ratings Type No. V CBO VCEO V EBO (V) (V) (V) Min Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) •c Po (W) (A) To=25°c ICBO V CB •c e s V CE (MA) Max 0 (V) (MA) Max (V) 10 e


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    PDF 2SC1942 2SD1168 2SD1168P 2SD1168Q 2SD200 2SD869 2SD870 BU204 BU205 BU207 BU208D BU208 BU208A BDY38 BOY20 BU2080

    WK16412

    Abstract: wk16414 KT201 IRS 8342 WK16413 LQ470 LQ410 1PP75 KC639 KT728
    Text: TESLA ELEKTRONICKE SOUCASTKiT KO N CERN R O ZN O V nO/iynpOBOÆHMKOBbie npn6opbi A H o n o ro B b ie M H T e rp a n b H b ie MMKpOCXeMbl 1 U n c fjp o B b ie M H T e rp a / ib M b ie M U K p O C X e M bl 2 rn ö p k i/ iH b ie M H T e rp a / ib H b ie MMKpOCXeMbl


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    PDF

    BDY38

    Abstract: 2n3055 2N3055HV BDY73 2N305
    Text: DIM A B C D E F G H J K L M MIN MAX 39.37 22,22 8,50 1.09 1.77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 - 6.35 0,96 29,90 10,69 5,20 16,64 11,15 - 3.84 U 2 1 PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR ALL DIMENSIONS ARE IN M.M. TO-3 Power Package Transistors NPN


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    PDF 2N3773 2N4347 2N6253 2N6257 2N6371 2N6371HV BDY20 BDY38 BDY55 BDY73 2n3055 2N3055HV 2N305

    BDY38

    Abstract: 2SD1168P BU606 2SD870 2S0200 2SC1942 2SD1168 2SD1168Q 2SD200 2SD869
    Text: TO-3 Power Package Transistors NPN Maximum Ratings Type No. VCBO VCE0 VE0O (V) (V) (V) Min Min Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) P0 (W) (A) @Tc=25°c fcao (MA) Max VCB (V) 'CES


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    PDF 2SC1942 2SD1168 2SD1168P 2SD1168Q 2SD200 2SD869 2SD870 BU204 BU205 BU207 BDY38 BU606 2S0200

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    PDF 301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    2N3055HV

    Abstract: BDY38 BDX18 2N3055 2N3773 2N4347 2N6253 2N6257 2N6371 2N6371HV
    Text: TO-3 : DIM A B C D E F G H J K L M r 'i 7 r 0 — 41— MIN ; MAX 39,37 22,22 8,50 1.09 1,77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 - 6,35 0,96 29,90 10,69 5,20 16,64 11,15 - 3,84 PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR ALL DIMENSIONS ARE IN M.M.


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    PDF 2N3055 2N3500 CSD1168Q 000131e! BDX18 CDP055 MJ2955 2N3055HV BDY38 2N3773 2N4347 2N6253 2N6257 2N6371 2N6371HV

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    bdx20

    Abstract: No abstract text available
    Text: TO-3 POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. v CB0 (V) Min v CB0 v EB0 (V) (V) Min Min PD (W) 8Tc=25"C Electrical C h a ra c te ris tic s 'CBO (HA) * VCB hFE (V) Max lc & (A) Min VCE 00 Max #1100 800 5 10 2 2.00 5 BU209 #1500


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    PDF BU206 BU209 BU205 BU208 BDX20 BDX18 J295S CDP055 Q000n3 bdx20

    KF520

    Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
    Text: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5


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    PDF 15Blatnà KF520 KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784