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onsemi BC637 TRANS NPN 60V 1A TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BC637	Bulk			10,000	1 - 10 - 100 - 1000 - 10000 $0.04869	Buy Now
Rochester Electronics	BC637		2,000		1	1 $0.0542 10 $0.0542 100 $0.0509 1000 $0.0461 10000 $0.0461	Buy Now
Rochester Electronics LLC BC637 TRANS NPN 60V 1A TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BC637	Bulk			5,323	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now
Rochester Electronics LLC BC637G TRANS NPN 60V 1A TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BC637G	Bulk			5,323	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now
onsemi BC637G TRANS NPN 60V 1A TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BC637G	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	BC637G		79,112		1	1 $0.0542 10 $0.0542 100 $0.0509 1000 $0.0461 10000 $0.0461	Buy Now
ComSIT USA	BC637G		5,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi BC637RL1G TRANS NPN 60V 1A TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BC637RL1G	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	BC637RL1G		343,750		1	1 $0.0542 10 $0.0542 100 $0.0509 1000 $0.0461 10000 $0.0461	Buy Now

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BC637 Datasheets (77)

Part	Manufacturer	Description	Datasheet Type	PDF
BC637	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor	Original	PDF
BC637	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor	Original	PDF
BC637	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR	Original	PDF
BC637	Korea Electronics	TRANS GP BJT NPN 60V 0.5A 3TO-92	Original	PDF
BC637	Motorola	High Current Transistors	Original	PDF
BC637	On Semiconductor	High Current Transistors	Original	PDF
BC637	On Semiconductor	High Current Transistor	Original	PDF
BC637	Philips Semiconductors	Small-signal Transistors	Original	PDF
BC637	Philips Semiconductors	NPN medium power transistors	Original	PDF
BC637	Siemens	NPN Silicon AF Transistor	Original	PDF
BC637	Siemens	Transistor / Diode Selection Guide	Original	PDF
BC637	Siemens	Cross Reference Guide 1998	Original	PDF
BC637	Siemens	NPN Silicon AF Transistors (High current gain High collector current)	Original	PDF
BC637	Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide	Original	PDF

BC637	Various Russian Datasheets	Transistor	Original	PDF
BC637	Bharat Electronics	Shortform Transistor Data	Short Form	PDF
BC637	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
BC637	Crimson Semiconductor	Transistor Selection Guide	Scan	PDF
BC637	Korea Electronics	General Purpose Transistor	Scan	PDF
BC637	Micro Electronics	Silicon Transistors	Scan	PDF

BC637 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BC639 Abstract: BC639-16 BC639G BC63 BC639 pin details BC637G BC639RL1G BC637 BC637RL1G bc637 050 Text: BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Symbol BC637 BC639 BC637 BC639 Emitter - Base Voltage	Original	PDF	BC637, BC639, BC639-16 BC637 BC639 BC637/D BC639 BC639-16 BC639G BC63 BC639 pin details BC637G BC639RL1G BC637 BC637RL1G bc637 050
BC638 Abstract: transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP Text: BC638 PNP Epitaxial Silicon Transistor BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter	Original	PDF	BC638 BC638 BC637 transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP
bc639 Abstract: BC637 BC635 TRANSISTOR E C B BC635 bc639 equivalent Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Collector 3.Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter	Original	PDF	BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B bc639 equivalent
bc639 Abstract: BC635 TRANSISTOR E C B BC637 BC635 bc639 equivalent C 14M Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC	Original	PDF	BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B bc639 equivalent C 14M
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ・Complementary to BC637. N E K SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO	Original	PDF	BC638 BC637. -10mA, -150mA -500mA, -50mA -500mA -50mA, 100MHz Width300
bc639 Abstract: BC63x BC639-16ZL1 BC637 Text: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package is Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC635 BC637 BC639 Collector-Base Voltage BC635 BC637	Original	PDF	BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC63x BC639-16ZL1
bc639 Abstract: BC637 BC635 BC635 TRANSISTOR E C B Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC	Original	PDF	BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B
BC637 Abstract: BC638 Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ᴌComplementary to BC637. N E K MAXIMUM RATING Ta=25ᴱ J SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60	Original	PDF	BC638 BC637. -150mA -500mA, -50mA -500mA -50mA, 100MHz BC637 BC638
bc639 Abstract: BC635 BC637 bc639 equivalent bc635 datasheet BC635 TRANSISTOR E C B BC639 datasheet transistor bc639 driver transistor hfe 60 BC639 collector Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter	Original	PDF	BC635 BC637 BC639 BC635 BC637 bc639 bc639 equivalent bc635 datasheet BC635 TRANSISTOR E C B BC639 datasheet transistor bc639 driver transistor hfe 60 BC639 collector
c63716 Abstract: transistor c63716 C637 C-63716 BC637 BC637-16 BC638 BCP52 BCP55 BCX52 Text: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistors Rev. 07 — 25 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA	Original	PDF	BC637; BCP55; BCX55 BC637 SC-43A BC638 BCP55 OT223 SC-73 BCP52 c63716 transistor c63716 C637 C-63716 BC637-16 BC638 BCP52 BCP55 BCX52
bc639 Abstract: BC635 BC637 Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC	Original	PDF	BC635 BC637 BC639 BC635 BC637 bc639
BC635 TRANSISTOR E C B Abstract: BC635 BC635-10 BC636 BC637 BC637-10 BC638 BC639 BC640 BC635 application note Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification	Original	PDF	M3D186 BC635; BC637; BC639 BC636, BC638 BC640. BC635 TRANSISTOR E C B BC635 BC635-10 BC636 BC637 BC637-10 BC639 BC640 BC635 application note
BC327 SOT 23 Abstract: PZT2222AT1 BC639 sot Text: Bipolar Transistors High Current Transistors w 500 mA V(BR)CEO IC mA Max Min Max MPSL51 100 600 40 250 BC489 BC490 80 1000 60 400 BC639 BC489A BC489B BC639−16 BC447 MPS8099 MPSA06 − MPS651 BC637 BC487 BC487B MPSA05 − BC640 BC490A BC490B BC640−16	Original	PDF	BC489 BC639 BC489A BC489B BC639-16 BC447 MPS8099 MPSA06 MPS651 BC637 BC327 SOT 23 PZT2222AT1 BC639 sot
2N2063A Abstract: 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola Text: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99	Original	PDF	BC141-S BFW24 BC637 BFS61 2N489S BFX34 2N1890 2N871 BC44S BC44S-18 2N2063A 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola

BC639 Abstract: BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639-16 BC639RL1 BC639ZL1 bc637 050 Text: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector-Base Voltage 45 60 80 1 EMITTER VCBO BC635 BC637 BC639 Emitter-Base Voltage	Original	PDF	BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC639 BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639-16 BC639RL1 BC639ZL1 bc637 050
BC637 Abstract: No abstract text available Text: SEMICONDUCTOR BC637 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 816 1 2 K BC637 2. Marking 3 4 No. 2001. 3. 9 Item Marking Description Device Name BC637 BC637 Lot No. 816 8 Year 0~9 : 1900~1999 16 Week 16 : 16th Week KEC K KEC CORP.	Original	PDF	BC637 BC637
BC639 Abstract: BC637 bc639 equivalent BC639-10 40250 Transistor TRANSISTOR BC639 bc637 transistor BC637-16 BC639 datasheet bc639-16 datasheet Text: BC635 / BC637 / BC639 NPN Type Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURE High current transistor 3.5±0.2 14.3±0.2 4.5±0.2 4.55±0.2 0.43+0.08 –0.07 0.46+0.1	Original	PDF	BC635 BC637 BC639 BC637 BC635 50MHz BC639 bc639 equivalent BC639-10 40250 Transistor TRANSISTOR BC639 bc637 transistor BC637-16 BC639 datasheet bc639-16 datasheet
transistor C639 Abstract: transistor C635 c639 transistor C639 w Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635	OCR Scan	PDF	BC635/637/639 BC635/638/640 BC635 BC637 BC639 transistor C639 transistor C635 c639 transistor C639 w
BC838 Abstract: BC640 bc636 npn transistor BC63 transistor BC639 BC635 BC636 BC637 BC638 BC639 Text: B C 6 3 5 THRU’ B C 6 4 0 ÏA COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors ‘ TO-92 for AF driver stages and amplifier applications up to 1A. ABSOLUTE MAXIMUM RATINGS	OCR Scan	PDF	BC635, BC637, BC639 BC636, BC638, BC640 BC635 T0-92 BC838 BC640 bc636 npn transistor BC63 transistor BC639 BC636 BC637 BC638 BC639
BC640 Abstract: BC638 BC636 bc639 bc638-10 BC635 BC636-10 BC637 bc636 npn transistor Silicon Epitaxial Planar Transistor philips Text: N AUER PHILIPS/DISCRETE bTE T> • bbS3R31 □OSTS'ib 4=17 ■ APX BÜ636; BC638; BC640 A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.	OCR Scan	PDF	bbS3R31 BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638 BC640 bc639 bc638-10 BC635 BC636-10 bc636 npn transistor Silicon Epitaxial Planar Transistor philips
se150 Abstract: No abstract text available Text: SEMICONDUCTOR BC637 T E C H N I C A L DATA EPI TAXI AL PLANAR NPN T RA NS I ST OR HIGH C U R R E N T TRA N SISTO RS. FEA TU RES • C om plem entary to BC638. DIM M A X IM U M RATING Ta=25°C C H A R A C T E R IS T IC SY M B O L C o llector-B ase V oltage	OCR Scan	PDF	BC637 BC638. 100/iA se150
bc 148 npn transistor Abstract: NPN transistor bc 148 bc639 BC 148 transistor BC637 Text: BC635; BC637; BC639 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 package. PNP com plem ents are BC636, BC638 and BC640. QUICK REFERENCE D A T A BC635 BC637 BC639 100 Collector-base voltage open em itter v CBO max. 45 60 Collector-emitter voltage (open base)	OCR Scan	PDF	BC635; BC637; BC639 BC636, BC638 BC640. BC635 BC637 BC639 bc 148 npn transistor NPN transistor bc 148 BC 148 transistor
63516 Abstract: 635-16 63916 Bc 649 Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A	OCR Scan	PDF	BC635; BC637; BC639 BC636, BC640. BC635 115002/00/03/pp8 63516 635-16 63916 Bc 649
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE b^E ]> • £,^53^31 □D27SC3D T7T ■ APX BC635; BC637; BC639 A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. P-N-P complements are BC636, BC638 and BC640.	OCR Scan	PDF	D27SC BC635; BC637; BC639 BC636, BC638 BC640. BC635 BC637

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BC637 Datasheets (77)

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