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    R25B

    Abstract: No abstract text available
    Text: APTGU60H120T Full - Bridge PT IGBT Power Module VCES = 1200V IC = 60A @ Tc = 80°C Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS 7 Punch Through PT IGBT - Low conduction loss


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    Abstract: No abstract text available
    Text: APTGU60H120T Full - Bridge PT IGBT Power Module VCES = 1200V IC = 60A @ Tc = 80°C VBUS Q3 G3 OUT1 E1 OUT2 Q2 E3 Q4 G2 G4 E2 E4 NTC1 NTC2 0/VBUS G3 G4 E3 E4 VBUS OUT2 OUT1 0/VBUS E1 E2 NTC2 G1 G2 NTC1 Features • Power MOS 7 Punch Through PT IGBT - Low conduction loss


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    PDF APTGU60H120T 50kHz OE-01

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


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