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    9Y TRANSISTOR Search Results

    9Y TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    9Y TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor itt 973

    Abstract: No abstract text available
    Text: , L/nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SC943 NPN h 7 V $/ /NPN SILICON EPITAXIAL TRANSISTOR Frequency Amplifier Use ft ^/FEATURES WB0/PACKAGE DIMENSIONS (Unittmm) •MtEtr-fo V C E O :40V, V E Bo'-8.0V


    Original     		PDF 2SC943 transistor itt 973

    FHT8550Y

    Abstract: 9y marking fht8550g
    Text: ࢅຫ৖ൈहࡍྯ૵਌ Low Frequency Power Amplifier Transistors FHT8550 Low Frequency Power Amplifier Transistors ࢅຫ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Suitable for Driver Stage of Small Motor 小馬達驅動 Complementary to FHT8050 與 FHT8050 互補


    Original     		PDF FHT8050 OT-23 FHT8550 OT-23 hFE1FHT8550O FHT85ymbol -10mA -100mA -800mA FHT8550Y 9y marking fht8550g

    FHT8550Y

    Abstract: fht8550g FHT8550
    Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 Low Frequency Power Amplifier Transistors 低频功率放大三极管 PNP Silicon FHT8550 FEATURES 特点


    Original     		PDF FHT8550) FHT8050 FHT8550O FHT8550Y FHT8550G -100A -10mA -100mA FHT8550

    FHR8550Y

    Abstract: FHR8550 FHR8550G FHR8550O 9y marking 9G SOT-89
    Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 Low Frequency Power Amplifier Transistors 低频功率放大三极管 PNP Silicon FHR8550 FEATURES 特点


    Original     		PDF FHR8550) FHR8550O FHR8550Y FHR8550G -120mA -10mA OT-89 FHR8550 9y marking 9G SOT-89

    XN6543

    Abstract: 2SC3904 9y marking NPN
    Text: Composite Transistors XN6543 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For low-noise amplification 2GHz band 2.8 –0.3 +0.25 1.5 –0.05 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage of


    Original     		PDF XN6543 2SC3904 XN6543 2SC3904 9y marking NPN

    9y transistor

    Abstract: No abstract text available
    Text: Composite Transistors XP06543 Silicon NPN epitaxial planar transistor 6 Unit: mm 0.425 For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is separated)


    Original     		PDF XP06543 2SC3904 65nteed 9y transistor

    2SC3904

    Abstract: XP06543
    Text: Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm 0.425 For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is separated)


    Original     		PDF XP06543 2SC3904 2SC3904 XP06543

    9y transistor

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is


    Original     		PDF 2002/95/EC) XP06543 2SC3904 9y transistor

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is


    Original     		PDF 2002/95/EC) XP06543 2SC3904

    2SC3904

    Abstract: XP06543
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		PDF 2002/95/EC) XP06543 2SC3904 XP06543

    2SC3904

    Abstract: XN06543 XN6543
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half


    Original     		PDF 2002/95/EC) XN06543 XN6543) 2SC3904 XN06543 XN6543

    2SC3904

    Abstract: XN06543 XN6543
    Text: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10


    Original     		PDF XN06543 XN6543) 2SC3904 XN06543 XN6543

    9y transistor

    Abstract: 2SC3904 XP06543
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 5 0.12+0.05 –0.02 4 M Di ain sc te on na tin nc ue e/ d 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 1 5˚ ue pl d in


    Original     		PDF 2002/95/EC) XP06543 9y transistor 2SC3904 XP06543

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half


    Original     		PDF 2002/95/EC) XN06543 XN6543) 2SC3904

    9y marking

    Abstract: 2SC3904 XN06543 XN6543
    Text: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° 1.1+0.2 –0.1 2SC3904 x 2 elements ■ Absolute Maximum Ratings 0 to 0.1 ● (Ta=25˚C) Parameter


    Original     		PDF XN06543 XN6543) 2SC3904 9y marking 2SC3904 XN06543 XN6543

    2SC3904

    Abstract: XN06543 XN6543
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05


    Original     		PDF 2002/95/EC) XN06543 XN6543) 2SC3904 XN06543 XN6543

    Untitled

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor Isolated Dual Transistors IMX17 •F e a tu re s •E x te r n a l dim ensions (Units: mm) 1) T w o 2 S D 1 4 8 4 K c h i p s i n a n S M T package. 2) 1.9±0.2 |!o-9y.95j tom atic mounting m achine. 3 ) T ransistor e le m e n ts a re in d e p e n ­


    OCR Scan     		PDF SC-74 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c

    2SC783

    Abstract: 2SA483 LBA-05 toshiba 2sc783 AC74
    Text: 2SA 483 o SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR mmmfa&tim o P ow er A m p lif ie r A p p lic a tio n s o V e r t i c a l O u tp u t A p p l i c a t i o n s : v ciilO — -1 5 0 V 2 SC783 i «*•*!• T T * m 9y * U n it Hi - in mm F i T ^ 7 ' loow > 300w


    OCR Scan     		PDF 2sa483 2SC783 10CW200W 200x200x2mm 100x100x2mm 2SA483 LBA-05 toshiba 2sc783 AC74

    9y transistor

    Abstract: ac42 npn 1000V 15A 2SC2122 TRANSISTOR NPN 8A 800V AC42C NPN Transistor VCEO 1000V 2SC2122A CI 834
    Text: S /U D ^N P N ZS & IK ^t SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR r 2 sc 2122 2 s c 2122A Unit in mm 02&OUAX. O 4 ? 9-y o TV Ho riz ont al Out pu t and Hi gh Power S wi tc hin g App lic at ion s • ¡SStflET-t; VcBO=!OOOV 2SC3122A 8 0 0 V , (28C21Z2)


    OCR Scan     		PDF 2SC2122A 2SC3122A) 28C21Z2) 2SC2122A 2SC2122 -21B1A 2SC212S 9y transistor ac42 npn 1000V 15A 2SC2122 TRANSISTOR NPN 8A 800V AC42C NPN Transistor VCEO 1000V CI 834

    sje transistor

    Abstract: 2SC195 2SC1959-Y sft 43 2SC19 2SC1959 9y transistor
    Text: Jo y N P N i& ïs / p m h ^ y s tw p c T jjX .ICON NPN EPITAXIAL TRANSISTOR E L E C T R IC A L C H A R A C T E R IS T IC S x- i s i j S S y * t l L L i e i + M M * 0t l W, n ) ? . * N o te -> i • x ì » y fik /¿A I EBO Ve B= 5V , - - 1.0 hF E l) Vq e= l v .


    OCR Scan     		PDF T0-92 SC-43 100mA 400mA 2SC1959 2SC195 sje transistor 2SC1959-Y sft 43 2SC19 9y transistor

    XP6543

    Abstract: 25CT5A 9y transistor
    Text: Composite Transistors Panasonic XP6543 Silicon NPN epitaxial planer transistor Unit: mm For low frequency amplification • Features • • High transition frequency fT. Two elements incorporated into one package. ■ Basic Part Number of Element • 2SC3904 x 2 elements


    OCR Scan     		PDF XP6543 2SC3904 XP6543 25CT5A 9y transistor

    diode t25 4 HO

    Abstract: No abstract text available
    Text: 3GE 1 ' D • 7 ^ 2 3 7 OOB'Hö? SCS-THO M SO N ;ILII gW BB(Si b ■ s6 SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP358 • • • • Voss 50 V ^ D S (o n 0.3 n 7 A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE ULTRA FAST SWITCHING


    OCR Scan     		PDF SGSP358 diode t25 4 HO

    je240

    Abstract: MJE241 MJE263 mje240 JE250 MJE244 mje260 mje250 mje252 mjE26
    Text: MOT OR CL A SC ÎEE D I b3b?254 QGÖS315 b | X S T RS /R F NPN MOTOROLA SEMICONDUCTOR T -3Î-07 T-33-17 TECHNICAL DATA M1E240, MJE241 MJE243, MJE244 PNP MJE250 thru MIE254 COMPLEMENTARY SILICON POWER PLASTIC TRANSISTORS 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON


    OCR Scan     		PDF T-33-17 M1E240, MJE241 MJE243, MJE244 MJE250 MIE254 MJE240, MJE243/4, MJE253/4 je240 MJE263 mje240 JE250 MJE244 mje260 mje252 mjE26

    TRANSISTOR SUBSTITUTION 1993

    Abstract: volterra VOLTERRA VT c1e2 hp8566A BFR520 CT-20 ED-11 TRANSISTOR SUBSTITUTION BFR520 transistor
    Text: IEEE JOURNAL ON SOLID-STATE CIRCUITS, VOL. 31, NO. 1, JANUARY 1996 114 Advanced Modeling of Distortion Effects in Bipolar Transistors Using the Mextram Model Leo C. N. de Vreede, Henk G. de Graaff, Koen M outhaan, Student M em ber, IEEE, M arinus de Kok, Joseph L. Tauritz, M ember, IEEE, and Roel G. F. Baets, M ember, IE E E


    OCR Scan     		PDF