XN6543
Abstract: 2SC3904 9y marking NPN
Text: Composite Transistors XN6543 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For low-noise amplification 2GHz band 2.8 –0.3 +0.25 1.5 –0.05 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage of
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XN6543
2SC3904
XN6543
2SC3904
9y marking NPN
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9y transistor
Abstract: No abstract text available
Text: Composite Transistors XP06543 Silicon NPN epitaxial planar transistor 6 Unit: mm 0.425 For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is separated)
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XP06543
2SC3904
65nteed
9y transistor
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2SC3904
Abstract: XP06543
Text: Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm 0.425 For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is separated)
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XP06543
2SC3904
2SC3904
XP06543
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9y transistor
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is
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2002/95/EC)
XP06543
2SC3904
9y transistor
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is
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2002/95/EC)
XP06543
2SC3904
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2SC3904
Abstract: XP06543
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP06543
2SC3904
XP06543
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2SC3904
Abstract: XN06543 XN6543
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
XN06543
XN6543)
2SC3904
XN06543
XN6543
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2SC3904
Abstract: XN06543 XN6543
Text: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10
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XN06543
XN6543)
2SC3904
XN06543
XN6543
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9y transistor
Abstract: 2SC3904 XP06543
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 5 0.12+0.05 –0.02 4 M Di ain sc te on na tin nc ue e/ d 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 1 5˚ ue pl d in
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2002/95/EC)
XP06543
9y transistor
2SC3904
XP06543
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
XN06543
XN6543)
2SC3904
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9y marking
Abstract: 2SC3904 XN06543 XN6543
Text: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For low-noise amplification (2GHz band) 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage
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XN06543
XN6543)
2SC3904
9y marking
2SC3904
XN06543
XN6543
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9y marking
Abstract: 2SC3904 XN06543 XN6543
Text: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° 1.1+0.2 –0.1 2SC3904 x 2 elements ■ Absolute Maximum Ratings 0 to 0.1 ● (Ta=25˚C) Parameter
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XN06543
XN6543)
2SC3904
9y marking
2SC3904
XN06543
XN6543
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2SC3904
Abstract: XN06543 XN6543
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05
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2002/95/EC)
XN06543
XN6543)
2SC3904
XN06543
XN6543
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2SC3904
Abstract: XP06543
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP06543
2SC3904
XP06543
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2SC3904
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-noise amplification (2 GHz band) • Features ■ Package • Code Mini6-G3 • Pin Name
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2002/95/EC)
XN06543G
2SC3904
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2SC3904
Abstract: XN06543 XN6543
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05
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2002/95/EC)
XN06543
XN6543)
2SC3904
XN06543
XN6543
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des
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2002/95/EC)
XN06543
XN6543)
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2SC3904
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543G Silicon NPN epitaxial planar type For low-noise amplification (2 GHz band) • Features ■ Package • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo
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2002/95/EC)
XN06543G
2SC3904
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QFN6
Abstract: MPS Tsot23 top VIEW marking 121 inductor
Text: MP2489 Step Down White LED Driver with Wide 6V–60V Input Voltage The Future of Analog IC Technology DESCRIPTION FEATURES The MP2489 is a high efficiency step-down converter designed in continuous current mode for driving the high brightness Light Emitting
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MP2489
MP2489
202mV
with17/2012
QFN6
MPS Tsot23 top VIEW marking
121 inductor
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MPS Tsot23 top VIEW marking
Abstract: No abstract text available
Text: MP2489 Step Down White LED Driver with Wide 6V–60V Input Voltage The Future of Analog IC Technology DESCRIPTION FEATURES The MP2489 is a high efficiency step-down converter designed in continuous current mode for driving the high brightness Light Emitting
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MP2489
MP2489
202mV
with9/4/2012
MPS Tsot23 top VIEW marking
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MP2489
Abstract: MP2489DN MP2489DJ QFN6 DIODE MARKING 9Y mp24 SOIC8E MPS Tsot23 top VIEW marking
Text: MP2489 Step Down White LED Driver with Wide 6V–60V Input Voltage The Future of Analog IC Technology DESCRIPTION FEATURES The MP2489 is a high efficiency step-down converter designed in continuous current mode for driving the high brightness Light Emitting
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MP2489
MP2489
202mV
MP2489DN
MP2489DJ
QFN6
DIODE MARKING 9Y
mp24
SOIC8E
MPS Tsot23 top VIEW marking
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MP2489
Abstract: WLED driver 3mm QUALITY LED MPS Tsot23 top VIEW marking
Text: MP2489 Step Down White LED Driver with Wide 6V–60V Input Voltage The Future of Analog IC Technology DESCRIPTION FEATURES The MP2489 is a high efficiency step-down converter designed in continuous current mode for driving the high brightness Light Emitting
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MP2489
MP2489
202mV
MS-012,
WLED driver
3mm QUALITY LED
MPS Tsot23 top VIEW marking
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XP6543
Abstract: 25CT5A 9y transistor
Text: Composite Transistors Panasonic XP6543 Silicon NPN epitaxial planer transistor Unit: mm For low frequency amplification • Features • • High transition frequency fT. Two elements incorporated into one package. ■ Basic Part Number of Element • 2SC3904 x 2 elements
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XP6543
2SC3904
XP6543
25CT5A
9y transistor
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gn2011
Abstract: XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT
Text: • z s K e m m m * — 5/ Mini Type 6 -p in P ackage Outline Transistors, Diodes $ .-M { 6 f t ? ) U n it i mm S E ^ O S - S I O S i) ¿ P li/ 'f y 'T -'y V -i'X T h 7 > y ' 7 J 2 m ? *k iL tm , - is . i f H ■ 43 f t I L * « T A B U S ' < 7 > r -
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OCR Scan
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PDF
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tiA-Ac37'
MA334
MA345
MA551
MA704
MA152WA
MA152WK
MA153
MA151WA
MA151WK
gn2011
XN7602
MA151WK
UN2212
1Ft 6PIN
M2D Package
m2b 160 le 4
5P J TRANSISTOR MARKING
3pin 20100
9YDT
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