Untitled
Abstract: No abstract text available
Text: Silicon Phototransistor in SMT Plastic Package OP580 • • • Wide Acceptance Angle Fast Response Time Plastic Leadless Chip Carrier PLCC The OP580 is an NPN silicon phototransistor mounted in a miniature SMT package. The device has a flat window lens which enables a wide acceptance angle. This device is packaged in a plastic leadless chip carrier that is
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OP580
OP580
OP280
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OP140
Abstract: OP140A OP140B OP140C OP140D OP140SL OP550 OP560
Text: Product Bulletin OP140A May 1996 GaAs Plastic Infrared Emitting Diodes Types OP140A, OP140B, OP140C, OP140D Features Absolute Maximum Ratings TA = 25o C unless otherwise noted • Wide irradiance pattern • Selected to specific on-line intensity Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
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OP140A
OP140A,
OP140B,
OP140C,
OP140D
OP140C
OP140B
OP140
OP140A
OP140B
OP140C
OP140D
OP140SL
OP550
OP560
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high sensitivity phototransistor four-lead
Abstract: op272 OP273 phototransistor four-lead OP270 OP271 OP570 phototransistor 600 nm
Text: Silicon Phototransistor in SMD Plastic Package OP570 Series • • • • High Photo Sensitivity Fast Response Time Four Lead Configurations IR Transmissive Plastic Package The OP570 series are NPN silicon phototransistors mounted in an opaque plastic SMT packages. The devices
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OP570
OP270
OP270
OP271
OP272
OP273
high sensitivity phototransistor four-lead
op272
OP273
phototransistor four-lead
OP271
phototransistor 600 nm
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OP250
Abstract: OP522
Text: Silicon Phototransistor in Miniature SMT Package OP522 • • • High Photo Sensitivity Fast Response Time 1206 Package Size with Internal Lens The OP522 is an NPN silicon phototransistor mounted in a miniature SMT package. The device incorporates an integral molded lens which enables a narrow acceptance angle and higher collector currents than devices without
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OP522
OP522
OP250
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A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer
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90F8548
SDP8600-001
95F5325
SDP8371-001
28H5849
28H5850
OPB933W55Z
08F2750
OPB963T55
08F2755
A 69157 scr
65k5
HEDS 5300
HCPL-900J-000E
HCPL 0636
DT 8210 IC
hcpl788
hcpl 1360
HEDS 8210
83K3
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BPD-BQEA34 SINCE 1981 END- LOOK PACKAGE PIN PHOTO DIODE ●Package Dimensions: z Features 1. Wide receiving angle 5.0 .197 2. Linear response vs. irradiance 3. Fast switching time 4. End-looking Package ideal for space 8.6(.339)
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BPD-BQEA34
BPD-BQEA34
935nm
935nm
1500pcs
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPD-RQＢ9DY-A SIDE- LOOK PACKAGE z PIN PHOTO DIODE ●Package Dimensions: 1. Wide receiving angle 5.0±0.1 .197±.004 2. Linear response vs. irradiance 3. Fast switching time 4.3±0.2 (.169±.008) 4. Side-looking Package ideal for space
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935nm
935nm
11000pcs
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BPD-C13A/QDA-37N SINCE 1981 END- LOOK PACKAGE PIN PHOTO DIODE ● Package Dimensions: ● Features 1. Wide receiving angle 2. Linear response vs. irradiance 6.2 .244 3. Fast switching time 15.5(.610) 4.7(.185) 4.End-looking Package ideal for space
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BPD-C13A/QDA-37N
BPD-C13A/QDA-37N
935nm
935nm
1250pcs
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPD-BQBA34 END- LOOK PACKAGE PIN PHOTO DIODE Package Dimensions: Features 1. Wide receiving angle 5.0 .197 2. Linear response vs. irradiance 3. Fast switching time 4. End-looking Package ideal for space 8.6(.339) 1.0(.039)
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BPD-BQBA34
BPD-BQBA34
935nm
500pcs
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPD-RQ09DV-1 For AB SIDE- LOOK PACKAGE PIN PHOTO DIODE Package Dimensions: Features 1. Wide receiving angle 2. Linear response vs. irradiance 3. Fast switching time 4. Side-looking Package ideal for space Limited applications
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BPD-RQ09DV-1
BPD-RQ09DV-1
935nm
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPD-BQA331 END- LOOK PACKAGE PIN PHOTO DIODE Package Dimensions: Features 1. Wide receiving angle 3.00 .118 2. Linear response vs. irradiance 3. Fast switching time 5.30(.209) 0.81(.032) 4. End-looking Package ideal for space
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BPD-BQA331
BPD-BQA331
935nm
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPD-BQDA34 END- LOOK PACKAGE PIN PHOTO DIODE Package Dimensions: Features 1. Wide receiving angle 5.0 .197 2. Linear response vs. irradiance 3. Fast switching time 4. End-looking Package ideal for space 8.6(.339) 1.0(.039)
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BPD-BQDA34
BPD-BQDA34
935nm
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BPD-RQ03DV-1
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BPD-RQ03DV-1 SINCE 1981 SIDE- LOOK PACKAGE PIN PHOTO DIODE ●Package Dimensions: z Features 1. Wide receiving angle 2. Linear response vs. irradiance 3. Fast switching time 4. Side-looking Package ideal for space Limited applications
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BPD-RQ03DV-1
BPD-RQ03DV-1
935nm
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BPD-BQDA34
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BPD-BQDA34 SINCE 1981 END- LOOK PACKAGE PIN PHOTO DIODE ●Package Dimensions: Features 1. Wide receiving angle 5.0 .197 2. Linear response vs. irradiance 3. Fast switching time 4. End-looking Package ideal for space 8.6(.339)
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BPD-BQDA34
BPD-BQDA34
935nm
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BPD-BQBA34 SINCE 1981 END- LOOK PACKAGE PIN PHOTO DIODE ●Package Dimensions: z Features 1. Wide receiving angle 5.0 .197 2. Linear response vs. irradiance 3. Fast switching time 4. End-looking Package ideal for space 8.6(.339)
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BPD-BQBA34
BPD-BQBA34
935nm
500pcs
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OP573
Abstract: No abstract text available
Text: Silicon Phototransistor OP570 Series OP570 Features: x x x x x SMD plastic package High photo sensitivity Fast response time Choice of four lead configurations IR transmissive plastic package OP573 OP571 OP572 Description: Each device in this series is an NPN silicon phototransistor mounted in an opaque plastic SMD package, with an
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OP570
OP570
OP573
OP571
OP572
OP270
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OP955
Abstract: No abstract text available
Text: 0 . OPTEK Product B ulletin O P955 June 1996 PIN Silicon Photodiode Type OP955 Features • Wide receiving angle • Linear response vs. irradiance • Fast switching time • Side-looking package ideal for space limited applications D escription The OP955 devices consists of a PIN
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OP955
OP955
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T35 diode
Abstract: ndm diode diode L2.70 OP165W OP505W diode T35 diode T35 -4-D6
Text: 0 .OPTEK Product Bulletin O P 165W Jun e 1996 GaAs Plastic Infrared Emitting Diode Type OP165W • Wide irradiance pattern • Mechanically and spectrally matched to the OP505W • Small package size for space limited applications • T-1 package style Reverse Voltage. 2.0 V
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OP165W
OP165W
OP505W
935nm
T35 diode
ndm diode
diode L2.70
OP505W
diode T35
diode T35 -4-D6
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Untitled
Abstract: No abstract text available
Text: OPTEK TECHNOLOGY INC 2?E D B bTTflSSO QOQÜbQI D 0>B OPTEK Product Bulletin OPC 6OX July 1989 Replaces January 1985 • NPN Silicon Phototransistor Chip .T-m-w Type OPC6QX Features Absolute Maximum Ratings *1\T a = 25°C unless otherwise noted • 2.7 times the active area of OPC 6OOL
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935nm,
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ee 3007
Abstract: No abstract text available
Text: <0 o p te k Product Bulletin OPL 8OOTXV June 1993 Hi-Reliability Photologic Hermetic Sensors Type OPL8OOTXV Features Absolute Maximum Ratings Ta = 25°C unless otherwise noted • 100% screened and quality conformance tested to Optelis Hi-Rel program
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OP235/OP236TX/TXV
MIL-STD-883
ee 3007
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OP165W
Abstract: OP505W
Text: OPTEK Product Bulletin OP165W June 1996 GaAs Plastic Infrared Emitting Diode Type OP165W .125 3.18 .115 (2.92) ANODE .125 (3.18) .115 (2.92) CATHODE .030 (0.76)NOM — .165 (4.19) .145 (3.68) .050 (1.27)NOM J .025 (0.64) SO. NOM .015 (0.38) .500 (12.70)-—
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OP165W
OP165W
OP505W
935nm
OP505W
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K-5550
Abstract: K5550 OP290C OP555 OP555A OP555B OP555C OP555D VRL1
Text: OPTEK Product Bulletin OP555A June 1996 NPN Silicon Phototransistors Types OP555A, OP555B, OP555C, OP555D • Wide receiving angle • Variety of sensitivity ranges • Side-looking package for space limited applications Collector-Emitter Voltage. 30 V
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OP555A
OP555A,
OP555B,
OP555C,
OP555D
OP555
OP290C
K-5550
K5550
OP555B
OP555C
OP555D
VRL1
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Untitled
Abstract: No abstract text available
Text: Product B ulletin O P130W b7TßSßO 00025S3 öbl “ OPTEK M ay 1996 GaAs Hermetic Infrared Emitting Diodes Types QP130W, 0P131W, OP132W, OP133W .a Features A b so lute M axim um Ratings T a = 25 ° C unless otherw ise noted • Wide irradiance pattern • Enhanced temperature range
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P130W
00025S3
QP130W,
0P131W,
OP132W,
OP133W
OP830WSL
100mA
T65flD
0002SSH
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Untitled
Abstract: No abstract text available
Text: 0 . OPTEK Product Bulletin OP9SO Jun e 1996 PIN Silicon Photodiode Type OP950 Features • • • • Wide receiving angle Linear response vs. irradiance Fast switching time Side-looking package ideal for space limited applications Description The OP950 device consists of a PIN
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OP950
OP950
00D2bfci4
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