C2D05120
Abstract: ua 8560 1200-VOLT C2D05120A defibrillator High Voltage Multipliers
Text: C2D05120A–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C2D05120A
1200-Volt
O-220-2
C2D05120
ua 8560
defibrillator
High Voltage Multipliers
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C2D05120A
Abstract: No abstract text available
Text: C2D05120A VRRM = Silicon Carbide Schottky Diode Zero R ecovery • • • • • • • IF TC=135˚C = 8.5 A Rectifier Features 1200 V Qc = 28 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C2D05120A
O-220-2
C2D05120
C2D05120A
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Untitled
Abstract: No abstract text available
Text: C2D05120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C2D05120â
1200-Volt
O-220-2
C2D05120
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Untitled
Abstract: No abstract text available
Text: C2D05120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C2D05120â
1200-Volt
O-220-2
C2D05120
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Untitled
Abstract: No abstract text available
Text: CSD10030–Silicon Carbide Schottky Diode Zero R ecovery VRRM = 300V Rectifier IF = 10A Qc = 11.5nC Features • • • • • • • Package 300 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD10030â
O-220-2
CSD10030
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C2D10120A
Abstract: No abstract text available
Text: C2D10120A VRRM VRRM= 1200 = 1200 V V Silicon Carbide Schottky Diode Zero R ecovery Rectifier Features • • • • • • • IF TC=135˚C = 14.5 A IF = 10 A Qc nC 61 nC Qc = 61 Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C2D10120A
O-220-2
C2D10120
C2D10120A
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Untitled
Abstract: No abstract text available
Text: C3D10065A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 14 A Z-Rec Rectifier Qc Features • • • • • • • 650 V = 25 nC Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C3D10065A
650-Volt
O-220-2
C3D10065A
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CSD01060E
Abstract: CSD01060 CSD01060A
Text: CSD01060 VRRM = Silicon Carbide Schottky Diode Zero R Features • • • • • • • IF TC=135˚C = 2 A Rectifier ecovery 600 V Qc = 3.3 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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CSD01060
600-Volt
O-252-2
O-220-2
CSD01060
CSD01060E
CSD01060A
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Untitled
Abstract: No abstract text available
Text: C3D08060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 11 A Z-Rec Rectifier Qc Features • • • • • • • 600 V = 21 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C3D08060A
600-Volt
O-220-2
C3D08060A
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c3d10060a
Abstract: No abstract text available
Text: C3D10060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 14 A Z-Rec Rectifier Qc Features • • • • • • • 600 V = 25 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C3D10060A
600-Volt
O-220-2
C3D10060A
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Untitled
Abstract: No abstract text available
Text: C3D06065A VRRM = 650650 VRRM V V Silicon Carbide Schottky Diode IF ITF;C=135˚C = 8.5 TC<135˚C 8.6AA Z-Rec Rectifier Qc Qc = 16 nC = nC Features • • • • • • • Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D06065A
650-Volt
O-220-2
C3D06065A
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Untitled
Abstract: No abstract text available
Text: C3D03060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 5.5 A Z-Rec Rectifier Qc Features • • • • • • • • 600 V = 6.7 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D03060A
600-Volt
O-220-2
C3D03060A
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Untitled
Abstract: No abstract text available
Text: C3D08065A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 11 A Z-Rec Rectifier Qc Features • • • • • • • 650 V = 21 nC Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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Original
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PDF
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C3D08065A
650-Volt
O-220-2
C3D08065A
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Untitled
Abstract: No abstract text available
Text: C3D06060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 8.5 A Z-Rec Rectifier Qc Features • • • • • • • 600 V = 16 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C3D06060A
600-Volt
O-220-2
C3D06060A
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Untitled
Abstract: No abstract text available
Text: C3D04065A VRRM = VRRM = 650650 V V Silicon Carbide Schottky Diode IF ITF;C=135˚C 7.5 TC<135˚C= 7.6AA Z-Rec Rectifier Qc Qc = 8.5 = 8.5 nC nC Features • • • • • • • • Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application
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C3D04065A
650-Volt
O-220-2
C3D04065A
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Untitled
Abstract: No abstract text available
Text: C3D04060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 7.5 A Z-Rec Rectifier Qc Features • • • • • • • • 600 V = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D04060A
600-Volt
O-220-2
C3D04060A
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NPN CD100 transistor
Abstract: smd transistor a68 NPN CD100 transistor file B80 smd diode Schottky Diode SC-62 octal MOSFET ARRAY smd transistor bq automotive mosfet SOT363 flash N-Channel Microcontrollers
Text: NEW MULTIMARKET PRODUCTS QUARTERLY HIGHLIGHTS VOLUME 2 ISSUE 3 Semiconductors AUGUST 2003 Discretes Logic Microcontrollers Standard Analog In this issue: 1. PMGD8000LN 20 V, 30 V and 60 V N-channel MOSFETs in SOT323 and SOT363 2. PBSS4350X, PBSS5350X, PBSS4250X
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PMGD8000LN
OT323
OT363
PBSS4350X,
PBSS5350X,
PBSS4250X
PBSS5250X
SC-62
PMEG1020EV
PMEG1020EA
NPN CD100 transistor
smd transistor a68
NPN CD100 transistor file
B80 smd diode
Schottky Diode SC-62
octal MOSFET ARRAY
smd transistor bq
automotive mosfet
SOT363 flash
N-Channel Microcontrollers
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907 TRANSISTOR smd
Abstract: PDTA144E catalog mosfet Transistor smd diode schottky code GW smd transistor bq smd diode GW at mega 48 microcontroller smd transistor y5 mosfet triggering circuit for inverter y4 smd transistor
Text: NEW MULTIMARKET PRODUCTS QUARTERLY HIGHLIGHTS VOLUME 2 ISSUE 4 Semiconductors NOVEMBER 2003 Discretes Logic Microcontrollers Standard Analog In this issue: 1. 74LVC1GX04 High performance crystal driver 2. BTA208X-1000B 1000 V high commutation, 3 quadrant triac
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74LVC1GX04
BTA208X-1000B
BUK221-50DY
LPC2114/2124
32-bit
P89LPC90x
PCK3807A
OT883
SSTVF16857
14-bit
907 TRANSISTOR smd
PDTA144E
catalog mosfet Transistor smd
diode schottky code GW
smd transistor bq
smd diode GW
at mega 48 microcontroller
smd transistor y5
mosfet triggering circuit for inverter
y4 smd transistor
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Untitled
Abstract: No abstract text available
Text: SBM3200 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEâ3 UNDER DEVELOPMENT SPECIFICATIONS SUBJECT TO CHANGE ADVANCE INFORMATION Features • · · · · Guard Ring Die Construction for Transient Protection Very Low Leakage Current High Junction Temperature Capability
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SBM3200
MIL-STD-202,
SBM3200-13
5000/Tape
com/datasheets/ap02007
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SBM3200-13
Abstract: J-STD-020A
Text: SBM3200 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEâ3 UNDER DEVELOPMENT SPECIFICATIONS SUBJECT TO CHANGE ADVANCE INFORMATION Features • · · · · Guard Ring Die Construction for Transient Protection Very Low Leakage Current High Junction Temperature Capability
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Original
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SBM3200
MIL-STD-202,
SBM3200-13
5000/Tape
com/datasheets/ap02007
SBM3200-13
J-STD-020A
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Untitled
Abstract: No abstract text available
Text: SPICE MODEL: MBRM5100H MBRM5100H 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEÒ3 UNDER DEVELOPMENT NEW PRODUCT Features • · · · · · Guard Ring Die Construction for Transient Protection High Surge Current Capability Very Low Leakage Current High Junction Temperature Capability
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MBRM5100H
com/datasheets/ap02001
DS30378
MBRM5100H-13
5000/Tape
com/datasheets/ap02007
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Untitled
Abstract: No abstract text available
Text: SPICE MODEL: MBRM5100H MBRM5100H 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEÒ3 UNDER DEVELOPMENT NEW PRODUCT Features • · · · · · Guard Ring Die Construction for Transient Protection High Surge Current Capability Very Low Leakage Current High Junction Temperature Capability
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Original
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PDF
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MBRM5100H
AP2001
com/datasheets/ap02001
5000/Tape
MBRM5100H-13
com/datasheets/ap02007
DS30378
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Untitled
Abstract: No abstract text available
Text: MBRM5100H 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEÒ3 UNDER DEVELOPMENT NEW PRODUCT Features • · · · · · Guard Ring Die Construction for Transient Protection High Surge Current Capability Very Low Leakage Current High Junction Temperature Capability
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Original
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PDF
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MBRM5100H
MIL-STD-202,
com/datasheets/ap02001
DS30378
MBRM5100H-13
5000/Tape
com/datasheets/ap02007
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ax253
Abstract: 213CT050-3B7 4N25 applications max489 regulator S485
Text: A lilX IA I 19-0226; Rev 0; 1/94 Transform er D river for Iso la te d RS-485 In te rfa c e The MAX253 consists of a CMOS oscillator driving a pair of N-channel power switches. The oscillator runs at double the output frequency, driving a toggle flip-flop to ensure 50% duty cycle to each of the switches.
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OCR Scan
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PDF
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RS-485
MAX253
S-232
tw4-1430
4732mm)
ax253
213CT050-3B7
4N25 applications
max489 regulator
S485
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