Apacer
Abstract: ata controller ssd block diagram of sata SSD drive APSDM032G15AD-ACM APSDM032G15AN-ACM ap-sdm128
Text: RoHS Compliant SATA-Disk Module 4 SDM4-M 22P/90D Product Specifications November 30th, 2011 Version 1.1 Apacer Technology Inc. 4th Fl., 75 Hsin Tai Wu Rd., Sec.1, Hsichih, New Taipei City, Taiwan 221 Tel: +886-2-2698-2888 www.apacer.com Fax: +886-2-2698-2889
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22P/90D
APSDMxxxx15Ax-ACMX
Apacer
ata controller ssd
block diagram of sata SSD drive
APSDM032G15AD-ACM
APSDM032G15AN-ACM
ap-sdm128
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SSD20N06-90D
Abstract: MosFET 90D 22
Text: SSD20N06-90D N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS ON 94 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density
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SSD20N06-90D
O-252
te300
30-Aug-2010
SSD20N06-90D
MosFET
90D 22
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Untitled
Abstract: No abstract text available
Text: SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0082 at VGS = 10 V 90d 97 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUM90N10-8m2P
O-263
SUM90N10-8m2P-E3
08-Apr-05
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74641
Abstract: SUP90N06-5M0P
Text: SUP90N06-5m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.005 at VGS = 10 V 90d 105 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N06-5m0P
O-220AB
SUP90N06-5m0P-E3
18-Jul-08
74641
SUP90N06-5M0P
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Untitled
Abstract: No abstract text available
Text: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT
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SUP90N10-8m8P
2002/95/EC
O-220AB
SUP90N10-8m8P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT
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SUP90N10-8m8P
2002/95/EC
O-220AB
SUP90N10-8m8P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification
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SUP90N08-7m7P
O-220AB
SUP90N08-7m7P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT
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SUP90N10-8m8P
2002/95/EC
O-220AB
SUP90N10-8m8P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification
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SUP90N08-7m7P
O-220AB
SUP90N08-7m7P-E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification
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SUP90N08-7m7P
O-220AB
SUP90N08-7m7P-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification
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SUP90N08-7m7P
O-220AB
SUP90N08-7m7P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT
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SUP90N10-8m8P
2002/95/EC
O-220AB
SUP90N10-8m8P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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74641
Abstract: SUP90N06-5M0P
Text: SUP90N06-5m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.005 at VGS = 10 V 90d 105 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N06-5m0P
O-220AB
SUP90N06-5m0P-E3
08-Apr-05
74641
SUP90N06-5M0P
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SUM90N10
Abstract: 74643 sum90n10-8m2p
Text: SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0082 at VGS = 10 V 90d 97 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUM90N10-8m2P
O-263
SUM90N10-8m2P-E3
18-Jul-08
SUM90N10
74643
sum90n10-8m2p
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Untitled
Abstract: No abstract text available
Text: SUP90N10-8m8P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N10-8m8P
O-220AB
SUP90N10-8m8P-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TO TOSHIBA {D ISCR ET E/OPTO} D E j IGTTaSG Q01bl54 7 | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA 90D SEMICONDUCTOR 16124 T~3?-27 D TOSHIBA GTR MODULE M625H2YS1 TECHNICAL DATA SILICON N CHANNEL 1GBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.
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Q01bl54
M625H2YS1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTO} ! 9097250 TOSHIBA DISCRETE/OPTO TO SH IB A TD ]> F | SOTTESO 90D 16014 SEMICONDUCTOR O O lb O m 0 7 ^ 33 .35- TOSHIBA CTR TRANSISTOR MG7 5G2YL1 A TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HI RH POWER SWITCHING APPLICATIONS.
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T0T7H50
MG75H2YL1A
EGA-MG75H2YL1A-4
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U4985
Abstract: No abstract text available
Text: For Immediate Assistance, Contact your Local Salesperson 14-Bit 5.12MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • HIGH SPURIOUS-FREE DYNAMIC RANGE: -90d B L Grade • WIDEBAND SAMPLE/HOLD: 60MHz • SAMPLE RATE: DC to 5.12MHz • HIGH SIGNAL/NOISE RATIO: 78dB
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14-Bit
12MHz
60MHz
12MHz
46-PIN
ADC614
17313bS
U4985
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Untitled
Abstract: No abstract text available
Text: qg TOSHIBA ÍDISCRETE/OPTOJ9097250 TOSHIBA TOSHIBA D E ] ^ 0 ^ 7 5 5 0 DD]jb3D7 H | 90D CDIS C R E T E /OPTO SEMICONDUCTOR 16307 DT-33-3S’ TOSHIBA GTR MODULE •MG-20Q6EK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.
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DISCRETE/OPTOJ9097250
DT-33-3Sâ
MG-20Q6EK1
hFEc100
MG20Q6EK1-1
TCH72SG
DDlb30Ã
iG20Q6F
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mg15n2
Abstract: No abstract text available
Text: TO TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E | TDTTESO 001bDS4 1 DT"33-3 5 90D 16054 SEMICONDUCTOR TOSHIBA GTR MODULE M G 1 5 N 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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001bDS4
MG15N2YK1
mg15n2
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Untitled
Abstract: No abstract text available
Text: "TD TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA Difjj TtHTSSO D01ti070 D 90D 16070 SEMICONDUCTOR DJ-33-3S TOSHIBA GTR MODULE TECHNICAL DATA MG50Q2YK1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm
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D01ti070
DJ-33-3S
MG50Q2YK1
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Untitled
Abstract: No abstract text available
Text: DE I TG^TESD 001b:L33 fl | TOSHIBA {DIS C RE TE /O PTO } 9097250 TOSHIBA <DISCRETE/OPTO TO SHIBA 90D 16133 SEMICONDUCTOR ~r-33-‘Z'7 D TOSHIBA GTR MODULE M G 50 H2 YS 1 TECHNICAL DATA SILICON N CHANNEL 1GBT HIGH POWER SWITCHING APPLICATIONS. riOTOR CONTROL APPLICATIONS.
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r-33-â
001blB7
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mg15n2
Abstract: No abstract text available
Text: ^ shíbT T d i s c r e t e /o p t o > TO 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA 90D 16156 SEMICONDUCTOR D T -3 3 -2 7 TOSHIBA GTR MODULE MG15N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT TENTATIVE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG15N2YS1
El/02
DT-33'
mg15n2
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Acumos
Abstract: transistor arrays 5v Transistor AN 7001 - 14 pin 7004 CMOS
Text: Acunos 0198987 ACUMOS in c to deJ o n a ia ? INC 90D dodooh3 D 00023 3 ^ T[ - *+1 -//• Of * * 7001, 7004, 7005 Acumos, Inc. High Output Drive Digital Gate Arrays M M LIIM IINAKY Features: Package Sizes •Low cost PAL replacements TYPES •100 to 700 gate densities
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00D0D23
Acumos
transistor arrays 5v
Transistor AN 7001 - 14 pin
7004 CMOS
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