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    905NM Price and Stock

    ams OSRAM Group SPL-BK94-40-(929.0----5NM)

    LASER BAR HIGH POWER
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    ams OSRAM Group SPL-BK98-40-25-10B-(969,0----5NM)

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    BEP 905NM

    Dc Panel - 24-Way - No Meter | BEP 905NM
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    RS 905NM Bulk 1
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    Amphenol PCTEL BOAH515905NM

    ANTENNA, OMNIDIRECTIONAL, 5.150-5.925 GHZ, 5 DBI, H-POL | PCTEL BOAH515905NM
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    Master Electronics BOAH515905NM
    • 1 $44.33
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    Marinco Electrical Group 905NM

    DC Panel - 24-Way - No Meter
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    Onlinecomponents.com 905NM
    • 1 $783.33
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    Find more 905NM price and stock on Findchips.com

    905NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    laser diode 905nm

    Abstract: No abstract text available
    Text: LASER DIODE LC-50S-905D LC-50S-905D is 905nm AIGaAs/GaAS single quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-50S-905D is a CW single mode injection semiconductor laser


    Original     		PDF LC-50S-905D LC-50S-905D 905nm laser diode 905nm

    N 821 Diode

    Abstract: laser diode 905nm LCQ90510S5N n type laser diode
    Text: LCQ90510S5-N/M/P InGaAs Laser Diode Jun.2004. Ver. 0 ♦OVERVIEW LCQ 90510S5-Serie is a MOCVD grown 905nm band InGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 10mW for Laser, industrial optical module and sensor application


    Original     		PDF LCQ90510S5-N/M/P 90510S5-Serie 905nm LCQ90510S5N LCQ90510S5M LCQ90510S5P lcq90510s5-n N 821 Diode laser diode 905nm LCQ90510S5N n type laser diode

    DPGAS3S09

    Abstract: DPGAS1S09 laser diode 905nm optoelectronics perkinelmer DTS0305 1500-nm DPGAC1S
    Text: P R E L I M I N A R Y SENSOR SOLUTIONS 905nm Epitaxial Double Cavity Multi-Quantum Well InGaAs Pulsed Laser Diode DPGA Series Overview This EPI-cavity structure possesses the same 25˚ beam divergence in the perpendicular direction as the PGA series product line, as well as


    Original     		PDF 905nm DTS0305 DPGAS3S09 DPGAS1S09 laser diode 905nm optoelectronics perkinelmer DTS0305 1500-nm DPGAC1S

    Untitled

    Abstract: No abstract text available
    Text: LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL90F7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer QL90F7S-A/B/C InGaAs Laser Diode Jun.2004. Ver. 0 ♦OVERVIEW QL90F7S-A/B/C is a MOCVD grown 905nm band InGaAs laser diode with quantum well


    Original     		PDF QL90F7S-A/B/C QL90F7S-A/B/C 905nm

    laser diode 905nm

    Abstract: CVD 65 CVD 165 Tyco diodes CVD 67 CVD-90 laser diode ldi 905 rangefinding CVD 166 905nm
    Text: Catalog 1307895 Revised 9-04 Fiber Optic Products Catalog High Power Pulsed Laser Diodes The CVD series lasers are strained layer quantum well devices fabricated by the MOCVD process. These pulsed lasers are available with up to 140W of peak power and either 850nm or 905nm.


    Original     		PDF 850nm 905nm. 850nm, 905nm, 1550nm laser diode 905nm CVD 65 CVD 165 Tyco diodes CVD 67 CVD-90 laser diode ldi 905 rangefinding CVD 166 905nm

    dual led 660 905 red infrared

    Abstract: led 660 905 red infrared oximeter oximeter 660 905 led 905 dual-emitter PDI-E832 905nm led 905 660
    Text: GaAlAs High power IR LED Emitters 660nm/905nm PDI-E832 PACKAGE DIMENSIONS INCH [mm] .063 [1.60] .167 [4.24] C L .104 [2.64] C L .055 [1.40] RED L.E.D. CHIP .025 [0.64] I.R. L.E.D. CHIP .060 [1.52] CL METALIZED CERAMIC WIRE BONDS .250 [6.35] ENCAPSOLATE CONTACT B


    Original     		PDF 660nm/905nm) PDI-E832 PDI-E832 dual led 660 905 red infrared led 660 905 red infrared oximeter oximeter 660 905 led 905 dual-emitter 905nm led 905 660

    laser diode 905nm

    Abstract: C30724 EXCELITAS LIDAR pgew1s09 3S09 PGEW 2S09 PGEW 1S09 2S09 PGEW2S09
    Text: PGEW Series 905nm Plastic Pulsed Laser Diode Description Applications The PGEW series employs an advanced multiple quantum well laser diode chip design producing high peak output power at low drive current. Peak wavelength is centered near the maximum responsivity of


    Original     		PDF 905nm C30724 lO-0812/03 laser diode 905nm EXCELITAS LIDAR pgew1s09 3S09 PGEW 2S09 PGEW 1S09 2S09 PGEW2S09

    Untitled

    Abstract: No abstract text available
    Text: Hybrid Laser Diodes for Pulsed Operations 4 Olsen Avenue, Edison, NJ 08820 USA phone: 732 549-9001 • fax: (732) 906-1559 www.laserdiode.com ISO 9001:2008 Certified High Efficiency High Peak Power Emission 905nm Peak Emission Wavelength Low Voltage Operation


    Original     		PDF 905nm

    PGAS1S09

    Abstract: PGAS1S24 PGAS3S09 PGAU1S12 PGAS1S03 905nm Multi-Quantum Well Strained InGaAs Pulsed laser diode 905nm PGAS1S12 PGAS1S16 PGAS3S06
    Text: This series of devices employs elements from 75µm wide single sources to four stacks of 600µm wide elements. Using standard InGaAs quantum wells grown for 905nm, this group of devices effectively replaces conventional double heterostructure GaAsAlGaAs diodes in that wavelength


    Original     		PDF 905nm, 100KHz DTS1104 PGAS1S09 PGAS1S24 PGAS3S09 PGAU1S12 PGAS1S03 905nm Multi-Quantum Well Strained InGaAs Pulsed laser diode 905nm PGAS1S12 PGAS1S16 PGAS3S06

    injection laser diode

    Abstract: laser diode 905nm
    Text: LASER DIODE LC-10S-905D LC-10S-905D is 905nm AIGaAs/GaAS single quantum well structure fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-10S-905D light source is a CW single mode injection semiconductor laser with built-in monitor


    Original     		PDF LC-10S-905D LC-10S-905D 905nm DifferentiaLC-10S-905D injection laser diode laser diode 905nm

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs High power IR LED Emitters 660nm/905nm PDI-E832 PACKAGE DIMENSIONS INCH [mm] .063 [1.60] .167 [4.24] C L .104 [2.64] C L .055 [1.40] RED L.E.D. CHIP .025 [0.64] I.R. L.E.D. CHIP .060 [1.52] CL METALIZED CERAMIC WIRE BONDS .250 [6.35] ENCAPSOLATE CONTACT B


    Original     		PDF 660nm/905nm) PDI-E832 PDI-E832

    3d scanner

    Abstract: scanner 3d automatic room light control TX5 transmitter
    Text: DATASHEET Key Features Trimble tx5 scanner The Trimble TX5 3D laser scanner is a revolutionary and highly versatile 3D scanning solution for a broad variety of scanning applications. The compact and lightweight design provides unmatched mobility at the job site, increasing field productivity. The intuitive and easy to use


    Original     		PDF

    raychem catalog termination kit and splicing kit

    Abstract: raychem catalog for 33 kV cable termination kit Campus Italia Vol 1 sLED 1550nm c10 opto speed SFP fiber optic pinout Mounting tray arinc 404 sLED 1550nm c10 Feeder, Quad Tyco STM Thermistor C60 light peak 10G VSCEL
    Text: FIBER OPTIC PRODUCTS LIGHT YEARS AHEAD Catalog 1307895 Revised 1-0 03 1 LIGHT YEARS AHEAD® Whether you’re designing local area networks, communications systems, or equipment, innovative fiber optic applications begin with innovative fiber optic products. Tyco Electronics offers a complete line of fiber optic


    Original     		PDF MT-RJ2-88 raychem catalog termination kit and splicing kit raychem catalog for 33 kV cable termination kit Campus Italia Vol 1 sLED 1550nm c10 opto speed SFP fiber optic pinout Mounting tray arinc 404 sLED 1550nm c10 Feeder, Quad Tyco STM Thermistor C60 light peak 10G VSCEL

    laser diode 905nm

    Abstract: CVD 40 laser diode ldi 905 905nm rangefinding CVD 165 CVD-195 CVD-197 Laser Diode Specifications 1550nm CVD 65
    Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 LDI High Power Pulsed Laser Diodes Revised 1-04 “NEW” LDI High Power Pulsed Laser Diodes Laser Diode Incorporated’s LDI CVD series lasers are strained layer


    Original     		PDF 850nm 905nm. 850nm, 905nm, 1550nm laser diode 905nm CVD 40 laser diode ldi 905 905nm rangefinding CVD 165 CVD-195 CVD-197 Laser Diode Specifications 1550nm CVD 65

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original     		PDF CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E

    CM51

    Abstract: No abstract text available
    Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-0099 1. Scope : This specification applies to PIN silicon photodiode chips, Device No. PD-0099 2. Structure : 2-1. Planar type : pin diode. 2-2. Electrodes : Top side Anode : aluminum alloy . 3. Size : 3-1. Chip size : 100 mils x 100 mils (2.54 mm × 2.54 mm ).


    Original     		PDF PD-0099 025mm) 228mm× 905nm CM51

    Untitled

    Abstract: No abstract text available
    Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-0100 1. Scope : This specification applies to pin silicon photodiode chips, Device No. PD-0100 2. Structure : 2-1. Planar type : Pin diode. 2-2. Electrodes : Top side Anode : Aluminum alloy . Back side ( Cathode ) : Gold alloy.


    Original     		PDF PD-0100 038mm) 100uA 905nm

    PD-0090

    Abstract: 80mils
    Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-0090 1. Scope : This specification applies to PIN silicon photodiode chips, Device No. PD-0090 2. Structure : 2-1. Planar type : Pin diode. 2-2. Electrodes : Top side Anode : Aluminum alloy . Back side ( Cathode ) : Gold alloy.


    Original     		PDF PD-0090 250mm 038mm) 80mils 000mm 165mm× 905nm PD-0090 80mils

    Silicon Photodiode Chip

    Abstract: No abstract text available
    Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-2054 1. Scope : This specification applies to NIP silicon photodiode chips, Device No. PD-2054 2. Structure : 2-1. Planar type : NIP diode. 2-2. Electrodes : Top side Anode : Aluminum alloy . Back side ( Cathode ) : Gold alloy.


    Original     		PDF PD-2054 038mm) 41mils 041mm 165mm 100uA 905nm Silicon Photodiode Chip

    laser SG-2000

    Abstract: PULSED LASER DIODE DRIVER siemens 9606 laserdiode 905 905nm Plastic Pulsed Laser Diode PGEW2S09 Laser Diode 850nm 1300nm pulsed laser transmitter 1550 nm Laser-Diode 905nm 1S12
    Text: Optoelectronic components Features max. pulse power ≥ 150 W @ 910 nm pulse lengths from < 1 ns to > 160 ns short rise and fall times max. pulse amplitude 80 – 100 A compact housing complete unit – no additional equipment needed adjustable pulse power optional


    Original     		PDF D-82140 laser SG-2000 PULSED LASER DIODE DRIVER siemens 9606 laserdiode 905 905nm Plastic Pulsed Laser Diode PGEW2S09 Laser Diode 850nm 1300nm pulsed laser transmitter 1550 nm Laser-Diode 905nm 1S12

    Untitled

    Abstract: No abstract text available
    Text: High Power Pulsed Laser Diodes 4 Olsen Avenue, Edison, NJ 08820 USA phone: 732 549-9001 • fax: (732) 906-1559 ISO 9001:2008 Certiied www.laserdiode.com • High Efficiency / High Reliability • Stable Output from -40°C to +85°C • Single and Stacked Devices up to 100Watts


    Original     		PDF 100Watts 850nm 905nm

    Untitled

    Abstract: No abstract text available
    Text: Standard-Area Silicon Avalanche Photodiodes 230, 500 µm PD-LD Inc. offers 2 sizes of standard Silicon Avalanche Photodiodes in several styles of fiber coupled packages. The semiconductors are available in two standard sizes: 230 micron or 500 micron active areas. Our Silicon APDs cover


    Original     		PDF 880nm 905nm

    808nm 1W laser diode

    Abstract: 980nm led laser diode 905nm led 940nm high power 1W laser diodes 808nm 1w 905nm Plastic Pulsed Laser Diode 780nm laser diode module SPL/780nm laser diode module CG94 TO220 Semiconductor Packaging
    Text: High Power Laser Diodes Power your application with a Siemens Laser Diode! All high power laser diodes manufactured at Siemens are based on InGa Al as double quantum well second confinement heterostructures (DQW-SCH), which are grown by metalorganic chemical


    Original     		PDF O-220 D-93049 de/Semiconductor/products/37/376 B143-H7010-G1-X-7600 TS12975. 808nm 1W laser diode 980nm led laser diode 905nm led 940nm high power 1W laser diodes 808nm 1w 905nm Plastic Pulsed Laser Diode 780nm laser diode module SPL/780nm laser diode module CG94 TO220 Semiconductor Packaging

    LA7810

    Abstract: Stantel Components LA520 laser weapon stantel LA3-02 LA7-01 STC Defence Systems LA10-02 LA1-02
    Text: ii: f • • « STCE 7137521 OQQÜObt. S SEE D s T C DEFENCE SYSTEMS . S T C .& <v'J/ 905nm Pulsed Window output I Laser Diodes r-Hhos a -i> LA Series á\J y .0 FEA TU RES: • • • • GaAs/GaAIAs single heterostructure laser design High peak output power for short pulse applications


    OCR Scan     		PDF 905nm LA7810 Stantel Components LA520 laser weapon stantel LA3-02 LA7-01 STC Defence Systems LA10-02 LA1-02